Deposition and structure transformation of ultra-wide bandgap ZnGa2O4 materials (Conference Presentation)

2019 ◽  
Author(s):  
Dong-Sing Wuu ◽  
Shiau-Yuan Huang ◽  
Shuo-Huang Yuan ◽  
Ray-Hua Horng ◽  
Sin-Liang Ou ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Structure Transformation

Structural aspects of silicon diffusion in quaternary III-V thin-film semiconductors

1991 ◽  
Vol 49 ◽  
pp. 850-851
Author(s):  
F. A. Ponce ◽  
R. L. Thornton ◽  
G. B. Anderson
Keyword(s):  
Semiconductor Lasers ◽  
Wide Bandgap ◽  
Semiconductor Diode ◽  
Visible Range ◽  
P System ◽  
Misfit Dislocations ◽  
Lattice Match ◽  
Semiconductor Diode Laser ◽  
Thin Film Semiconductors ◽  
Silicon Diffusion

The InGaAlP quaternary system allows the production of semiconductor lasers emitting light in the visible range of the spectrum. Recent advances in the visible semiconductor diode laser art have established the viability of diode structures with emission wavelengths comparable to the He-Ne gas laser. There has been much interest in the growth of wide bandgap quaternary thin films on GaAs, a substrate most commonly used in optoelectronic applications. There is particular interest in compositions which are lattice matched to GaAs, thus avoiding misfit dislocations which can be detrimental to the lifetime of these materials. As observed in Figure 1, the (AlxGa1-x)0.5In0.5P system has a very close lattice match to GaAs and is favored for these applications.In this work, we have studied the effect of silicon diffusion in GaAs/InGaAlP structures. Silicon diffusion in III-V semiconductor alloys has been found to have an disordering effect which is associated with removal of fine structures introduced during growth. Due to the variety of species available for interdiffusion, the disordering effect of silicon can have severe consequences on the lattice match at GaAs/InGaAlP interfaces.

2D/3D Perovskite Heterostructures for High Performance and High Open Circuit Voltage in Wide-Bandgap Perovskite Photovoltaics

2019 ◽  
Author(s):  
Ulrich W. Paetzold ◽  
Saba Gharibzadeh ◽  
Marius Jackoby ◽  
Tobias Abzieher ◽  
Somayeh Moghadamzadeh ◽  
...  
Keyword(s):  
High Performance ◽  
Open Circuit Voltage ◽  
Wide Bandgap ◽  
Open Circuit

Organic Tandem Solar Cells with 15% Efficiency Employing Novel Wide Bandgap Nonfullerene Acceptor

2019 ◽  
Author(s):  
Yuliar Firdaus ◽  
Thomas D. Anthopoulos ◽  
Yuanbao Lin ◽  
Ferry Anggoro Ardy Nugroho ◽  
Emre Yengel ◽  
...  
Keyword(s):  
Solar Cells ◽  
Wide Bandgap ◽  
Tandem Solar Cells ◽  
Nonfullerene Acceptor

Wide-bandgap bipolar material with high thermal stability

2019 ◽  
pp. 903
Author(s):  
Sheng-Chieh Lin ◽  
Yu-Chieh Cheng ◽  
Man-Kit Leung ◽  
Jiun-Haw Lee ◽  
Tien-Lung Chiu
Keyword(s):  
Thermal Stability ◽  
Wide Bandgap ◽  
High Thermal Stability
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