Evidence for avalanche generation in reverse-biased InGaN LEDs

2019 ◽  
Author(s):  
Nicola Renso ◽  
Carlo De Santi ◽  
Pradip Dalapati ◽  
Desirée Monti ◽  
Michael Binder ◽  
...  
Keyword(s):  
Avalanche Generation

Effect of Negative Gate Bias on Single Pulse Avalanche Ruggedness of 1.2 kV Silicon Carbide MOSFETs

2018 ◽  
Vol 924 ◽  
pp. 735-738 ◽  
Author(s):  
Selamnesh Nida ◽  
Thomas Ziemann ◽  
Bhagyalakshmi Kakarla ◽  
Ulrike Grossner
Keyword(s):  
Silicon Carbide ◽  
Single Pulse ◽  
Gate Oxide ◽  
Gate Bias ◽  
Power Mosfets ◽  
Self Heating ◽  
Significant Difference ◽  
Oxide Defects ◽  
Voltage Spike ◽  
Avalanche Generation

When power MOSFETs experience a voltage spike initiating avalanche generation, a large amount of power is dissipated at the device junction. This leads to self-heating and lowers the threshold voltage. Some sources indicate that unintended opening of the channel creates a positive feedback, thereby increasing heat generation and leading to thermal runaway. Therefore, keeping MOSFETs off by applying a negative gate bias should improve avalanche ruggedness. In this report, this claim is investigated by comparing single pulse avalanche ruggedness of commercial 1.2 kV, 80 mΩ planar and trench MOSFETs at -10 V and 0 V off-state gate bias. Both planar and trench devices show a small increase in their breakdown voltage with negative gate bias. However, there is no significant difference in avalanche withstanding energy. Even in investigated trench gate devices where the gate oxide is susceptible to interface as well as oxide defects, keeping the gate voltage at VGS = -10 V did not result in improvements in ruggedness.

New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETs

2020 ◽  
Vol 1004 ◽  
pp. 1066-1073
Author(s):  
Arthur F. Witulski ◽  
Dennis R. Ball ◽  
Robert A. Johnson ◽  
Kenneth F. Galloway ◽  
Andrew L. Sternberg ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Schottky Diodes ◽  
Failure Mechanisms ◽  
Single Event ◽  
Electrical Field ◽  
Power Diodes ◽  
Avalanche Generation ◽  
Power Densities ◽  
Degradation Effect ◽  
Insight Into

Ion-induced leakage current degradation, and single-event burnout may be manifestestations of the same device mechanisms in both silicon carbide power diodes and MOSFETs. In all cases there is a migration of the electrical field from the front body-drain interface to the back epi-drain n+ interface, with a peak exceeding the critical electric field of silicon carbide, causing avalanche generation which enables high short-duration power densities during an approximate 20 psec window after the ion strike. The degradation effect in JBS SiC diodes seems to be independent of the length of the epitaxial region for different voltage-rated diodes.

scholarly journals Existence of Weak Solutions to a Class of Degenerate Semiconductor Equations Modeling Avalanche Generation

2009 ◽  
Vol 2009 ◽  
pp. 1-22
Author(s):  
Bin Wu
Keyword(s):  
Weak Solutions ◽  
Semiconductor Device ◽  
Mixed Boundary ◽  
Drift Diffusion Model ◽  
Degenerate Semiconductor ◽  
Drift Diffusion ◽  
Diffusion Term ◽  
Existence Of Weak Solutions ◽  
Semiconductor Equations ◽  
Avalanche Generation

We consider the drift-diffusion model with avalanche generation for evolution in time of electron and hole densitiesn,pcoupled with the electrostatic potentialψin a semiconductor device. We also assume that the diffusion term is degenerate. The existence of local weak solutions to this Dirichlet-Neumann mixed boundary value problem is obtained.

ON THE EXISTENCE OF WEAK SOLUTIONS TO A SYSTEM OF STATIONARY SEMICONDUCTOR EQUATIONS WITH AVALANCHE GENERATION

1994 ◽  
Vol 04 (02) ◽  
pp. 273-289 ◽  
Author(s):  
J. FREHSE ◽  
J. NAUMANN
Keyword(s):  
Weak Solution ◽  
Boundary Value Problem ◽  
Impact Ionization ◽  
Mixed Boundary ◽  
Diffusion Equations ◽  
Mixed Boundary Value Problem ◽  
Drift Diffusion ◽  
Existence Of Weak Solutions ◽  
Semiconductor Equations ◽  
Avalanche Generation

This paper is concerned with the stationary drift-diffusion equations of semiconductor theory involving recombination-generation of carriers due to particle transition, and pure generation by impact ionization (avalanche generation). We establish the existence of a weak solution to the mixed boundary value problem for the system of PDEs under consideration. In the proof we combine an approximation argument with some estimates based on a positivity property of the recombination-generation term.

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