Stationary Semiconductor Equations Modeling Avalanche Generation

J. Frehse; J. Naumann

doi:10.1006/jmaa.1996.0108

Stationary Semiconductor Equations Modeling Avalanche Generation

Journal of Mathematical Analysis and Applications ◽

10.1006/jmaa.1996.0108 ◽

1996 ◽

Vol 198 (3) ◽

pp. 685-702 ◽

Cited By ~ 1

Author(s):

J. Frehse ◽

J. Naumann

Keyword(s):

Semiconductor Equations ◽

Avalanche Generation

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Existence of Weak Solutions to a Class of Degenerate Semiconductor Equations Modeling Avalanche Generation

Mathematical Problems in Engineering ◽

10.1155/2009/873683 ◽

2009 ◽

Vol 2009 ◽

pp. 1-22

Author(s):

Bin Wu

Keyword(s):

Weak Solutions ◽

Semiconductor Device ◽

Mixed Boundary ◽

Drift Diffusion Model ◽

Degenerate Semiconductor ◽

Drift Diffusion ◽

Diffusion Term ◽

Existence Of Weak Solutions ◽

Semiconductor Equations ◽

Avalanche Generation

We consider the drift-diffusion model with avalanche generation for evolution in time of electron and hole densitiesn,pcoupled with the electrostatic potentialψin a semiconductor device. We also assume that the diffusion term is degenerate. The existence of local weak solutions to this Dirichlet-Neumann mixed boundary value problem is obtained.

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ON THE EXISTENCE OF WEAK SOLUTIONS TO A SYSTEM OF STATIONARY SEMICONDUCTOR EQUATIONS WITH AVALANCHE GENERATION

Mathematical Models and Methods in Applied Sciences ◽

10.1142/s0218202594000170 ◽

1994 ◽

Vol 04 (02) ◽

pp. 273-289 ◽

Cited By ~ 2

Author(s):

J. FREHSE ◽

J. NAUMANN

Keyword(s):

Weak Solution ◽

Boundary Value Problem ◽

Impact Ionization ◽

Mixed Boundary ◽

Diffusion Equations ◽

Mixed Boundary Value Problem ◽

Drift Diffusion ◽

Existence Of Weak Solutions ◽

Semiconductor Equations ◽

Avalanche Generation

This paper is concerned with the stationary drift-diffusion equations of semiconductor theory involving recombination-generation of carriers due to particle transition, and pure generation by impact ionization (avalanche generation). We establish the existence of a weak solution to the mixed boundary value problem for the system of PDEs under consideration. In the proof we combine an approximation argument with some estimates based on a positivity property of the recombination-generation term.

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