Engineering sub-wavelength silicon waveguides for sensing applications in the near-infrared and mid-infrared band (Conference Presentation)

2019 ◽  
Author(s):  
Juan Gonzalo Wangüemert-Pérez ◽  
Alejandro Sánchez-Postigo ◽  
Abdelfettah Hadij-ElHouati ◽  
Jonas Leuermann ◽  
Carlos Pérez-Armenta ◽  
...  
Keyword(s):  
Near Infrared ◽  
Infrared Band ◽  
Mid Infrared ◽  
Silicon Waveguides ◽  
Sensing Applications ◽  
Sub Wavelength

scholarly journals Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

Nanophotonics ◽  
2014 ◽  
Vol 3 (4-5) ◽  
pp. 247-268 ◽  
Author(s):  
Lin Zhang ◽  
Anuradha M. Agarwal ◽  
Lionel C. Kimerling ◽  
Jurgen Michel
Keyword(s):  
Chalcogenide Glasses ◽  
Pulse Compression ◽  
Near Infrared ◽  
Frequency Comb ◽  
Group Iv ◽  
Critical Approach ◽  
Numerical Work ◽  
Mid Infrared ◽  
Sensing Applications ◽  
Silicon And Germanium

AbstractGroup IV photonics hold great potential for nonlinear applications in the near- and mid-infrared (IR) wavelength ranges, exhibiting strong nonlinearities in bulk materials, high index contrast, CMOS compatibility, and cost-effectiveness. In this paper, we review our recent numerical work on various types of silicon and germanium waveguides for octave-spanning ultrafast nonlinear applications. We discuss the material properties of silicon, silicon nitride, silicon nano-crystals, silica, germanium, and chalcogenide glasses including arsenic sulfide and arsenic selenide to use them for waveguide core, cladding and slot layer. The waveguides are analyzed and improved for four spectrum ranges from visible, near-IR to mid-IR, with material dispersion given by Sellmeier equations and wavelength-dependent nonlinear Kerr index taken into account. Broadband dispersion engineering is emphasized as a critical approach to achieving on-chip octave-spanning nonlinear functions. These include octave-wide supercontinuum generation, ultrashort pulse compression to sub-cycle level, and mode-locked Kerr frequency comb generation based on few-cycle cavity solitons, which are potentially useful for next-generation optical communications, signal processing, imaging and sensing applications.

scholarly journals Visible to Mid-infrared Waveband Photodetector Based on Insulator Capped Asymmetry Black Phosphorous

2021 ◽  
Vol 9 ◽  
Author(s):  
Qi Han ◽  
Yadong Jiang ◽  
Jiayue Han ◽  
Xiang Dong ◽  
Jun Gou
Keyword(s):  
Band Gap ◽  
Dark Current ◽  
Near Infrared ◽  
Photothermal Effect ◽  
Saturable Absorption ◽  
Infrared Band ◽  
Mid Infrared ◽  
Infrared Wavelength ◽  
Black Phosphorous ◽  
Harvesting Process

Processing layer-dependent direct band gap and good absorption coefficient especially in the mid-infrared band, black phosphorous is believed to make a contribution superior to that of graphene in broadband photodetectors. The narrow band gap of 0.3 eV for bulk black phosphorous helps to absorb infrared radiation while a relatively large dark current under zero gate voltage is inevitable. Few layer black phosphorous sheets with asymmetrical thickness sealed in an insulator for protection is designed and explored for photosensitive mechanism in this work. Saturable absorption dominates the light harvesting process in visible light detection and thus limits maximum photocurrent to 3.3 and 1.4 μA for 520 and 650 nm lasers with a dark current of 0.7 μA. While in near-infrared wavelength, a responsivity of 0.12 A/W is inducted for 808 nm free of adsorption saturation even if the incident power is increased to 200 mW/cm2. Discrimination for the origin of the photo-response in short wavelength is conducted and the abnormal negative and nearly constant photocurrent in mid-infrared, irrelevant to inhomogeneous thickness, reveals the photothermal effect in a black phosphorous sheet. This work unravels various photoelectric features in black phosphorous and paves the way to designing more outstanding broadband photodetectors based on black phosphorous.

Parameter Space Exploration in Dispersion Engineering of Multilayer Silicon Waveguides from Near-Infrared to Mid-Infrared

2016 ◽  
Vol 34 (16) ◽  
pp. 3696-3702 ◽  
Author(s):  
Zeinab Jafari ◽  
Lin Zhang ◽  
Anuradha M. Agarwal ◽  
Lionel C. Kimerling ◽  
Jurgen Michel ◽  
...  
Keyword(s):  
Parameter Space ◽  
Near Infrared ◽  
Space Exploration ◽  
Mid Infrared ◽  
Silicon Waveguides ◽  
Dispersion Engineering

scholarly journals Suspended Microracetrack Resonator with Lateral Sub-wavelength-Grating Metamaterial Cladding for Mid-infrared Sensing Applications

2018 ◽  
Vol 17 ◽  
pp. 02005 ◽  
Author(s):  
Zecen Zhang ◽  
Geok Ing Ng ◽  
Ting Hu ◽  
Haodong Qiu ◽  
Xin Guo ◽  
...  
Keyword(s):  
Chemical Sensing ◽  
Extinction Ratio ◽  
Silicon On Insulator ◽  
Propagation Loss ◽  
Index Method ◽  
Mid Infrared ◽  
Infrared Sensing ◽  
Sensing Applications ◽  
The One ◽  
Sub Wavelength

A one-time etching suspended microracetrack resonator with lateral sub-wavelength-grating (SWG) metamaterial cladding is theoretically and experimentally demonstrated on commercial 340 nm-thick-top-silicon silicon-on-insulator (SOI) platform for mid-infrared (MIR) bio-chemical sensing applications. The suspended structure can offer a larger exposed area of waveguides with the testing chemicals as well as a decent sensitivity. And the one-time etching process also eases the fabrication. The suspended waveguide is optimized with a balance between propagation loss and the sensitivity. The suspended microracetrack resonator is experimentally measured at 2 μm wavelength and well fitted with an extinction ratio (ER) of 12.3 dB and a full-width-at-half-maximum (FWHM) of 0.12 nm, which corresponds to a quality factor (Q factor) of 16600. With the equivalent refractive index method and a specially developed numerical model, the expected sensitivities of fundamental TE and TM mode were calculated as 58 nm/RIU and 303 nm/RIU respectively. This one-time etching suspended microracetrack resonator shows great potential in MIR optical bio-chemical sensing applications.

scholarly journals Observing and controlling a Tamm plasmon at the interface with a metasurface

Nanophotonics ◽  
2020 ◽  
Vol 9 (4) ◽  
pp. 897-903 ◽  
Author(s):  
Oleksandr Buchnev ◽  
Alexandr Belosludtsev ◽  
Victor Reshetnyak ◽  
Dean R. Evans ◽  
Vassili A. Fedotov
Keyword(s):  
Liquid Crystal ◽  
Metal Film ◽  
Near Infrared ◽  
Thin Metal Film ◽  
Outer Side ◽  
Spectral Position ◽  
External Perturbations ◽  
Dielectric Mirror ◽  
Wavelength Scale ◽  
Sub Wavelength

AbstractWe demonstrate experimentally that Tamm plasmons in the near infrared can be supported by a dielectric mirror interfaced with a metasurface, a discontinuous thin metal film periodically patterned on the sub-wavelength scale. More crucially, not only do Tamm plasmons survive the nanopatterning of the metal film but they also become sensitive to external perturbations as a result. In particular, by depositing a nematic liquid crystal on the outer side of the metasurface, we were able to red shift the spectral position of Tamm plasmon by 35 nm, while electrical switching of the liquid crystal enabled us to tune the wavelength of this notoriously inert excitation within a 10-nm range.

scholarly journals High-Efficiency Spin-Related Vortex Metalenses

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1485
Author(s):  
Wei Wang ◽  
Ruikang Zhao ◽  
Shilong Chang ◽  
Jing Li ◽  
Yan Shi ◽  
...  
Keyword(s):  
Angular Momentum ◽  
Orbital Angular Momentum ◽  
Topological Charge ◽  
High Efficiency ◽  
Infrared Band ◽  
Mid Infrared ◽  
Integrated Devices ◽  
Vortex Beams ◽  
Topological Charges

In this paper, one spin-selected vortex metalens composed of silicon nanobricks is designed and numerically investigated at the mid-infrared band, which can produce vortex beams with different topological charges and achieve different spin lights simultaneously. Another type of spin-independent vortex metalens is also designed, which can focus the vortex beams with the same topological charge at the same position for different spin lights, respectively. Both of the two vortex metalenses can achieve high-efficiency focusing for different spin lights. In addition, the spin-to-orbital angular momentum conversion through the vortex metalens is also discussed in detail. Our work facilitates the establishment of high-efficiency spin-related integrated devices, which is significant for the development of vortex optics and spin optics.

scholarly journals Mid infrared polarization engineering via sub-wavelength biaxial hyperbolic van der Waals crystals

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Saurabh Dixit ◽  
Nihar Ranjan Sahoo ◽  
Abhishek Mall ◽  
Anshuman Kumar
Keyword(s):  
Room Temperature ◽  
Extinction Ratio ◽  
Polarization State ◽  
Van Der Waals ◽  
Photonic Devices ◽  
Mid Infrared ◽  
Precise Control ◽  
Electromagnetic Simulations ◽  
Frequency Regime ◽  
Sub Wavelength

AbstractMid-infrared (IR) spectral region is of immense importance for astronomy, medical diagnosis, security and imaging due to the existence of the vibrational modes of many important molecules in this spectral range. Therefore, there is a particular interest in miniaturization and integration of IR optical components. To this end, 2D van der Waals (vdW) crystals have shown great potential owing to their ease of integration with other optoelectronic platforms and room temperature operation. Recently, 2D vdW crystals of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2 \hbox {O}_5$$ V 2 O 5 have been shown to possess the unique phenomenon of natural in-plane biaxial hyperbolicity in the mid-infrared frequency regime at room temperature. Here, we report a unique application of this in-plane hyperbolicity for designing highly efficient, lithography free and extremely subwavelength mid-IR photonic devices for polarization engineering. In particular, we show the possibility of a significant reduction in the device footprint while maintaining an enormous extinction ratio from $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 based mid-IR polarizers. Furthermore, we investigate the application of sub-wavelength thin films of these vdW crystals towards engineering the polarization state of incident mid-IR light via precise control of polarization rotation, ellipticity and relative phase. We explain our results using natural in-plane hyperbolic anisotropy of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 via both analytical and full-wave electromagnetic simulations. This work provides a lithography free alternative for miniaturized mid-infrared photonic devices using the hyperbolic anisotropy of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 .

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