Production of high laser induced damage threshold mirror coatings using plasma ion assisted evaporation, plasma assisted reactive magnetron sputtering and ion beam sputtering

2018 ◽  
Author(s):  
Alex Ribeaud ◽  
Harro Hagedorn ◽  
Jürgen Pistner ◽  
Matthew Brophy ◽  
Pete Kupinski ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Ion Beam ◽  
Damage Threshold ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Ion Beam Sputtering ◽  
High Laser ◽  
Beam Sputtering ◽  
Laser Induced Damage

scholarly journals Investigation of laser-induced damage threshold improvement mechanism during ion beam sputtering of fused silica

2017 ◽  
Vol 25 (23) ◽  
pp. 29260 ◽  
Author(s):  
Mingjin Xu ◽  
Feng Shi ◽  
Lin Zhou ◽  
Yifan Dai ◽  
Xiaoqiang Peng ◽  
...  
Keyword(s):  
Ion Beam ◽  
Damage Threshold ◽  
Fused Silica ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Laser Induced Damage

High Yield and High Throughput Reactive IBAD MgO Process for Long-length, HTS Wire Production at SuperPower

2008 ◽  
Vol 1150 ◽  
Author(s):  
Xuming Xiong ◽  
karol Zdun ◽  
Sunjing Kim ◽  
Andrei Rar ◽  
Senthil Sambandam ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Throughput ◽  
Ion Beam ◽  
High Rate ◽  
Buffer System ◽  
Reactive Magnetron ◽  
Ion Beam Sputtering ◽  
Transition Mode ◽  
Beam Sputtering ◽  
Process Speed

AbstractSuperPower's IBAD (ion beam assisted deposition) MgO process has been changed to reactive ion beam sputtering of Mg metal target instead of MgO ceramic target, which gives ∼ 60 % increase in deposition rate. The process speed was increased from 195 m/h to 360 m/h. Texture of IBAD MgO tapes by this reactive process was found to degrade faster during long length run. This uniform issue was resolved with feedback control during long run and from run to run. The bottleneck of alumina layer process due to slow ion beam sputtering deposition was removed by new high rate reactive magnetron sputtering at transition mode. The new alumina process speed can be as high as 3,000 m/h in our Pilot Buffer system. The yttria layer process was also changed to high rate reactive magnetron sputtering at transition mode with achievable speed as high as 10,000 m/h in our Pilot Buffer system. The routine production speed of alumina and yttria is 750 m/h due to limitation of tape driving system. The high rate magnetron-sputtered alumina/yttria yields the same texture of IBAD MgO as ion beam sputtered alumina/yttria. Now we are routinely producing IBAD MgO template tapes of ∼ 1.4 km with a uniform in-plane texture ∼ 6-7 degrees. Record high critical current of 813 A/cm over a one meter length and a world record critical current times length value of > 233,8100A-m was obtained with our routinely-produced high throughput IBAD MgO buffers. The requirements for a better IBAD texturing layer than IBAD MgO are also suggested.

Laser-induced damage of rugate and quarter-wave stacks high reflectors deposited by ion-beam sputtering

2013 ◽  
Vol 52 (8) ◽  
pp. 086103 ◽  
Author(s):  
Zhao Qiao ◽  
Ping Ma ◽  
Hao Liu ◽  
Yunti Pu ◽  
Zhichao Liu
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Quarter Wave ◽  
Laser Induced Damage

scholarly journals Influence of the Characteristics of Multilayer Interference Antireflection Coatings Based on Nb, Si, and Al Oxides on the Laser-Induced Damage Threshold of ZnGeP2 Single Crystal

Crystals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1549
Author(s):  
Nikolai Nikolayevich Yudin ◽  
Mikhail Zinoviev ◽  
Vladislav Gladkiy ◽  
Evgeny Moskvichev ◽  
Igor Kinyaevsky ◽  
...  
Keyword(s):  
Laser Radiation ◽  
Nonlinear Crystal ◽  
Ion Beam ◽  
Damage Threshold ◽  
Antireflection Coating ◽  
Coated Sample ◽  
Antireflection Coatings ◽  
Ion Beam Sputtering ◽  
Incident Laser Radiation ◽  
Laser Induced Damage

In this work, the effect of the defect structure and the parameters of antireflection interference coatings based on alternating layers of Nb2O5/Al2O3 and Nb2O5/SiO2 layers on the laser-induced damage threshold of ZGP crystals under the action of Ho:YAG laser radiation at a wavelength of 2.097 μm was determined. Coating deposition was carried out using the ion-beam sputtering method. The laser-induced damage threshold of the sample with a coating based on alternating layers Nb2O5 and SiO2 was W0d = 1.8 J/cm2. The laser-induced damage threshold of the coated sample based on alternating layers of Nb2O5 and Al2O3 was W0d = 2.35 J/cm2. It has been found that the presence of silicon conglomerates in an interference antireflection coating leads to a decrease in the laser-induced damage threshold of a nonlinear crystal due to local mechanical stresses and the scattering of incident laser radiation.

The Influences of Oxygen Content on Microstructures and Optical Properties of Al2O3 Films Deposited by Oxygen Ion Beam Assisted Pulse Reactive Magnetron Sputtering

2013 ◽  
Vol 750-752 ◽  
pp. 1891-1896
Author(s):  
Jin Xiao Wang ◽  
Zhi Min Wang ◽  
Yi Wang ◽  
Kai Zhao ◽  
Xiao Mei Su ◽  
...  
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Oxygen Content ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Amorphous Structure ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray ◽  
Oxygen Ion

Al2O3films have been deposited at room temperature on polyimide substrates using oxygen ion beam assisted pulse reactive magnetron sputtering system in which aluminium sputtering is simultaneous with oxygen ion beam irradiation. A set of samples were prepared at different oxygen content and film characterizations have been carried out using X-ray diffraction (XRD) for film crystallization, atomic force microscopy (AFM) for surface morphology, and X-ray photoelectron spectroscopy (XPS) for elemental composition measurements and chemical bonding states. The films are smoother and near stoichiometric aluminum oxide as oxygen content increases up to 86%. All films are kept in amorphous structure. The optical properties of the films showed sensitive with oxygen content. Transparent films of refractive index 1.63 are obtained with a deposition rate as high as 70.3 nm/min by 86% oxygen ion beam assisted, which is about 5 times than the films by conventional reactive magnetron sputtering.

Deposition Of Aluminium Nitride Film By Ion Beam Enhanced Reactive Magnetron Sputtering

1991 ◽  
Vol 223 ◽  
Author(s):  
R. F. Huang ◽  
L. S. Wen ◽  
H. Wang ◽  
J. Wu ◽  
R. J. Hong
Keyword(s):  
Magnetron Sputtering ◽  
Physical Vapor Deposition ◽  
Ion Beam ◽  
Aluminium Nitride ◽  
Reactive Magnetron Sputtering ◽  
Nitride Film ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Substrate Temperatures

ABSTRACTAluminium nitride film has been synthesized at substrate temperatures lower than 100 °C by using ion beam enhanced reactive magnetron sputtering. The growth rate was much higher than that obtained by usual physical vapor deposition at low substrate temperatures. The stoichiometry of the film was controlled by varying the resultant current of the ion beam used and identified by X-ray diffraction analysis. The optical properties of the film were also studied.

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