Single-shot excimer laser annealing of PECVD amorphous silicon

1996 ◽  
Author(s):  
Pierre Boher ◽  
Dorian Zahorski ◽  
Sylvie Prochasson ◽  
Bruno Godard ◽  
Jean-Louis P. Stehle ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Single Shot ◽  
Excimer Laser Annealing

Single shot excimer laser annealing of amorphous silicon: effect of hydrogen on the properties of the poly silicon

1995 ◽  
Vol 397 ◽  
Author(s):  
P. Boher ◽  
M. Stehle ◽  
B. Godard ◽  
J.L. Stehle
Keyword(s):  
Thermal Treatment ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Low Cost ◽  
Structural Quality ◽  
Single Shot ◽  
Excimer Laser Annealing ◽  
Medium Temperature ◽  
Glass Substrates

ABSTRACTPECVD amorphous silicon films deposited at different temperatures on low cost glass substrates have been treated by a Single Shot Excimer Laser Annealing (SSELA) at various energy densities. The influence of a thermal treatment at medium temperature (400°C) prior to the SSELA treatment was also investigated. Spectroscopie ellipsometry and Raman characterizations show that hydrogen contamination produces an important roughness increase with very little polycrystalline grains (650nm) after laser treatment. The thermal treatment prior laser annealing improves drastically the structural quality of the films. Structural results are correlated with the electrical performances of the TFT produced on these films.

Single shot excimer laser annealing of amorphous silicon for AMLCD

1996 ◽  
pp. 376-383
Author(s):  
Pierre Boher ◽  
Jean Louis Stehle ◽  
Marc Stehle ◽  
Bruno Godard
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Single Shot ◽  
Excimer Laser Annealing

Single shot excimer laser annealing of amorphous silicon for AMLCD

1996 ◽  
Vol 96-98 ◽  
pp. 376-383 ◽  
Author(s):  
Pierre Boher ◽  
Jean Louis Stehle ◽  
Marc Stehle ◽  
Bruno Godard
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Single Shot ◽  
Excimer Laser Annealing

Nucleation Process During Excimer Laser Annealing of Amorphous Silicon Thin Films on Glass: A Molecular-dynamics Study

2006 ◽  
Vol 958 ◽  
Author(s):  
Shinji Munetoh ◽  
Takanori Mitani ◽  
Takahide Kuranaga ◽  
Teruaki Motooka
Keyword(s):  
Thin Films ◽  
Molecular Dynamics ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Surface Region ◽  
Excimer Laser Annealing ◽  
Silicon Thin Films ◽  
Steady State Temperature ◽  
Dynamics Simulations

ABSTRACTWe have performed molecular-dynamics simulations of heating, melting and recrystallization processes in amorphous silicon (a-Si) thin films deposited on glass during excimer laser annealing. By partially heating the a-Si surface region with 2 nm depth and removing thermal energy from the bottom of the glass substrate, a steady-state temperature profile was obtained in the a-Si layer with the thickness of 15 nm and only the surface region was melted. It was found that nucleation predominantly occurred in the a-Si region as judged by the coordination numbers and diffusion constants of atoms in the region. The results suggest that nucleation occurs in unmelted residual a-Si region during the laser irradiation and then crystal growth proceeds toward liquid Si region under the near-complete melting condition.

Effects of Excimer Laser Annealing Process on the Ni-Sputtered Amorphous Silicon Film

2010 ◽  
Vol 13 (10) ◽  
pp. H346 ◽  
Author(s):  
Moojin Kim ◽  
GuangHai Jin ◽  
Hoonkee Min ◽  
HoKyoon Chung ◽  
Sangsoo Kim ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Silicon Film ◽  
Annealing Process ◽  
Excimer Laser Annealing ◽  
Amorphous Silicon Film

Lateral Solid-Phase Recrystallization from the Crystal Seed Selectively Formed by Excimer Laser Annealing in Ge-Ion-Implanted Amorphous Silicon Films

2000 ◽  
Vol 39 (Part 1, No. 9A) ◽  
pp. 5063-5068 ◽  
Author(s):  
Jin-Wook Seo ◽  
Satoru Akiyama ◽  
Yoichiro Aya ◽  
Tomoyuki Nohda ◽  
Hiroki Hamada ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Solid Phase ◽  
Silicon Films ◽  
Excimer Laser Annealing ◽  
Phase Recrystallization ◽  
Crystal Seed ◽  
Ion Implanted

Phase transformation in amorphous silicon under excimer laser annealing studied by Raman spectroscopy and mobility measurements

1996 ◽  
Vol 79 (12) ◽  
pp. 9064-9073 ◽  
Author(s):  
Takashi Inushima ◽  
Naoto Kusumoto ◽  
Nobuo Kubo ◽  
Hong‐Yong Zhang ◽  
Shumpei Yamazaki
Keyword(s):  
Raman Spectroscopy ◽  
Phase Transformation ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing

Transient temperature measurement of amorphous silicon thin films during excimer laser annealing

1999 ◽  
Author(s):  
Seung-Jae Moon ◽  
Ming-Hong Lee ◽  
Mutsuko Hatano ◽  
Kenkichi Suzuki ◽  
Constantine P. Grigoropoulos
Keyword(s):  
Thin Films ◽  
Temperature Measurement ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Transient Temperature ◽  
Excimer Laser Annealing ◽  
Silicon Thin Films
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