Transmission electron microscopy, photoluminescence, and capacitance spectroscopy on GaAs/Si grown by metal organic chemical vapor deposition

1991 ◽  
Author(s):  
Georges E. Bremond ◽  
Hicham Said ◽  
Gerard Guillot ◽  
Jaafar Meddeb ◽  
M. Pitaval ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Transmission Electron ◽  
Metal Organic ◽  
Capacitance Spectroscopy ◽  
Organic Chemical Vapor Deposition

Ferroelectric Domain Boundaries Induced by Interface Mismatch Dislocations in BaTiO3/LaAlO3

1996 ◽  
Vol 466 ◽  
Author(s):  
Z. L. Wang ◽  
Z. R. Dai
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ferroelectric Domain ◽  
Organic Chemical ◽  
Transmission Electron ◽  
Domain Boundaries ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTInterface microstractures of BaTiO3/LaAlO3 grown by metal-organic chemical vapor deposition (MOCVD) are studied using high-resolution transmission electron microscopy (HRTEM). Interface dislocations in BaTiO3/LaAlO3 have been shown to be directly linked with the 90° domain boundaries in BaTiO3. This association is a result of strain relief due to a phase transformation on cooling from the growth temperature. The {100} surfaces of BaTiO3 are terminated with the Ba-O layer.

Controlled growth and characterization of monolayer MoS2 by using metal-organic chemical vapor deposition

2021 ◽  
Vol 66 (1) ◽  
pp. 49-56
Author(s):  
Quyen Do Le ◽  
Duc Nguyen Anh
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Inorganic Materials ◽  
Organic Chemical ◽  
Sio2 Substrate ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Recently, novel physical properties originating from quantum confinement endow the twodimensional (2D) transition metal dichalcogenides, such as MoS2, or WSe2 to attract a great deal of attention. However, the synthesis of 2D-TMDC has to be still limited, in which the precursors are almost based on high vapor pressure inorganic materials, that produce a smallscale film, and it is mainly performed only on conventional Si\SiO2 substrate. In this work, we successfully synthesize the atomic thickness of 2D-MoS2 films by using metal-organic chemical vapor deposition (MOCVD) on several kinds of substrate, namely silicon (Si), silicon dioxide (SiO2), graphite foil, or fluorine-doped tin oxide (FTO). The morphology of samples is observed by field emission scanning electron microscopy (FE-SEM), and scanning transmission electron microscopy (STEM). The lattice vibrational and optical properties are investigated by Raman and photoluminescence (PL) spectroscopies, respectively. With the same MOCVD growing condition, as-obtained samples exhibit the hexagonal configuration (2H phase), whereas the surface morphology and the thickness show a discrepancy, depending on the substrates.

scholarly journals Phase Change Ge-Rich Ge–Sb–Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3358
Author(s):  
Arun Kumar ◽  
Raimondo Cecchini ◽  
Claudia Wiemer ◽  
Valentina Mussi ◽  
Sara De Simone ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Core Shell ◽  
The Core ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Shell Nanowires

Ge-rich Ge–Sb–Te compounds are attractive materials for future phase change memories due to their greater crystallization temperature as it provides a wide range of applications. Herein, we report the self-assembled Ge-rich Ge–Sb–Te/Sb2Te3 core-shell nanowires grown by metal-organic chemical vapor deposition. The core Ge-rich Ge–Sb–Te nanowires were self-assembled through the vapor–liquid–solid mechanism, catalyzed by Au nanoparticles on Si (100) and SiO2/Si substrates; conformal overgrowth of the Sb2Te3 shell was subsequently performed at room temperature to realize the core-shell heterostructures. Both Ge-rich Ge–Sb–Te core and Ge-rich Ge–Sb–Te/Sb2Te3 core-shell nanowires were extensively characterized by means of scanning electron microscopy, high resolution transmission electron microscopy, X-ray diffraction, Raman microspectroscopy, and electron energy loss spectroscopy to analyze the surface morphology, crystalline structure, vibrational properties, and elemental composition.

A Drastic Change in Structure and Property of TiO2 Thin Films Deposited by Metal-Organic Chemical Vapor Deposition With Deposition Temperature

2000 ◽  
Vol 616 ◽  
Author(s):  
Jeong-Hoon Park ◽  
Woon-Jo Cho ◽  
Kug-Sun Hong
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Refractive Index ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractTiO2 thin films were deposited by metal-organic chemical vapor deposition (MOCVD) method using titanium tetraisopropoxide(TTIP). A drastic change in structural aspect and its property occurred when the deposition temperature increased above 400°C. Deposition kinetics was proved to transit from reaction controlled regime into diffusion controlled regime above about 400°C in Arrehnius plot. In X-ray diffraction (XRD)and infrared reflectance spectra, it was observed that the crystallinity was decreased significantly around 400°C. The surface microstructure has changed explicitly from dense structure with larger grains to porous one with smaller grains observed by scanning electron microscopy and transmission electron microscopy. Electrical resistance of the films jumped by 2 orders of magnitude, which is measured by the 4-point probe method. The refractive index calculated by Swanepoel's method has decreased from 2.45 to 2.28 at 630nm. The porous microstructure of films deposited at above 400°C was thought to be responsible for the significant decrease in electrical conductivity and refractive index of the films.

YBa2CU3O7-x THICK FILMS DEPOSITED BY PHOTO-ASSISTED METAL-ORGANIC CHEMICAL VAPOR DEPOSITION

2005 ◽  
Vol 19 (01n03) ◽  
pp. 423-425
Author(s):  
JIANMING ZENG ◽  
IRENE RUSAKOVA ◽  
ZHONGJIA TANG ◽  
XIN ZHANG ◽  
DALBER SANCHEZ ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thick Films ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
High Quality ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Mocvd Technique

High-quality YBa2Cu3O7-x ( YBCO ) thick films with thickness over 4.0μm were deposited by photo-assisted metal-organic chemical vapor deposition (PhA-MOCVD) technique with high growth rates. Microstructures of YBCO thick films have been systematically investigated by scanning electron microscopy, high-resolution transmission electron microscopy, and selected area electron diffraction techniques. The fabricated YBCO thick films are very dense and single-crystal like with no visible grain boundaries or voids. The high quality of the prepared YBCO thick films was confirmed further by the results of X-ray diffraction analyses and Jc measurements. Thus, these thick YBCO films prepared by PhA-MOCVD technique have promising application potential in fields such as coated conductors.

Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

1997 ◽  
Author(s):  
K. Doong ◽  
J.-M. Fu ◽  
Y.-C. Huang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

scholarly journals Laser‐Assisted Metal–Organic Chemical Vapor Deposition of Gallium Nitride

2021 ◽  
Vol 15 (6) ◽  
pp. 2170024
Author(s):  
Yuxuan Zhang ◽  
Zhaoying Chen ◽  
Kaitian Zhang ◽  
Zixuan Feng ◽  
Hongping Zhao
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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