scholarly journals Techniques for increasing output power from mode-locked semiconductor lasers

1996 ◽  
Author(s):  
Alan Mar ◽  
G. Allen Vawter
Keyword(s):  
Semiconductor Lasers ◽  
Output Power

Dependence of lifetime of II-VI semiconductor lasers on output power for different mounting configurations

1996 ◽  
Vol 32 (14) ◽  
pp. 1290 ◽  
Author(s):  
M. Buijs ◽  
K. Haberern ◽  
T. Marshall ◽  
K.K. Law ◽  
P.F. Baude ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Output Power

Analysis of the stability of multiple-phase-shift distributed-feedback semiconductor lasers

1993 ◽  
Vol 71 (1-2) ◽  
pp. 29-38 ◽  
Author(s):  
Yves Champagne ◽  
Nathalie McCarthy
Keyword(s):  
Phase Shift ◽  
Semiconductor Lasers ◽  
Output Power ◽  
Longitudinal Mode ◽  
Single Mode ◽  
Distributed Feedback ◽  
Hole Burning ◽  
Lasing Wavelength ◽  
Multiple Phase ◽  
The Stability

The effects of the longitudinal spatial hole burning on the static lasing characteristics of a specific configuration of distributed-feedback semiconductor laser with three phase-shift regions are investigated using a numerical approach. A serious degradation of the stability of the optimum design, having the flattest axial intensity distribution at low output power, is predicted for drive levels beyond a critical value. The lasing wavelength exhibits a sudden shift (wavelength chirping), along with a significant degradation of the single-mode character of the longitudinal-mode spectrum. Thus, the potentialities of this multiple-phase-shift structure to provide a stable narrow-linewidth emission at high output power appear to be less than expected from results calculated for the near-threshold regime. Nevertheless, it is found that a multiple-phase-shift configuration that departs slightly from the optimum case suffices to recover most of the promises expected from this distributed-feedback laser design.

scholarly journals Angled broad-area semiconductor lasers to emit high output power with good beam quality

2004 ◽  
Author(s):  
Yi-Shin Su ◽  
Chih-Hung Tsai ◽  
Chia-Wei Tsai ◽  
Din P. Tsai ◽  
Ching-Fuh Lin
Keyword(s):  
Semiconductor Lasers ◽  
Output Power ◽  
Beam Quality ◽  
High Output Power ◽  
Broad Area ◽  
Good Beam Quality ◽  
High Output

The Characteristics of Facet Coatings on Diode Lasers

2015 ◽  
Vol 1089 ◽  
pp. 202-205
Author(s):  
Zai Jin Li ◽  
Yi Qu ◽  
Te Li ◽  
Peng Lu ◽  
Bao Xue Bo ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Output Power ◽  
Laser Diode ◽  
Diode Lasers ◽  
Laser Diodes ◽  
Waveguide Structure ◽  
Test Results ◽  
Passivation Film ◽  
Graded Index ◽  
Is Failure

The effect of the output power with different facet passivation methods on 980 nm graded index waveguide structure InGaAs/AlGaAs laser diodes was studied. The output power of the 980 nm laser diodes with Si passivation, and ZnSe passivation at the front and the back facet were compared. The test results show that output power of the ZnSe passivation method is 11% higher than Si passivation method. The laser diode with the Si passivation film is failure when current is 5.1 A, the laser diode with the ZnSe passivation film is not failure until current is 5.6 A And we analyzed the failure reasons for each method. In conclusion, the method of coated ZnSe passivation on the laser diode facet can effectively increase the output power of semiconductor lasers.

Experimental and theoretical investigation of large output power Q-switched AlGaAs semiconductor lasers

1993 ◽  
Vol 5 (1) ◽  
pp. 19-22 ◽  
Author(s):  
B.J. Thedrez ◽  
S.E. Saddow ◽  
Y.Q. Liu ◽  
C. Wood ◽  
R. Wilson ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Output Power ◽  
Theoretical Investigation ◽  
Large Output
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