Nonlinear (self-focusing) limitations of output power in semiconductor lasers of various geometries

1992 ◽  
Vol 2 (9) ◽  
pp. 1691-1702 ◽  
Author(s):  
Peter G. Eliseev ◽  
Rashit F. Nabiev
Keyword(s):  
Semiconductor Lasers ◽  
Output Power ◽  
Self Focusing

Dependence of lifetime of II-VI semiconductor lasers on output power for different mounting configurations

1996 ◽  
Vol 32 (14) ◽  
pp. 1290 ◽  
Author(s):  
M. Buijs ◽  
K. Haberern ◽  
T. Marshall ◽  
K.K. Law ◽  
P.F. Baude ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Output Power

Analysis of the stability of multiple-phase-shift distributed-feedback semiconductor lasers

1993 ◽  
Vol 71 (1-2) ◽  
pp. 29-38 ◽  
Author(s):  
Yves Champagne ◽  
Nathalie McCarthy
Keyword(s):  
Phase Shift ◽  
Semiconductor Lasers ◽  
Output Power ◽  
Longitudinal Mode ◽  
Single Mode ◽  
Distributed Feedback ◽  
Hole Burning ◽  
Lasing Wavelength ◽  
Multiple Phase ◽  
The Stability

The effects of the longitudinal spatial hole burning on the static lasing characteristics of a specific configuration of distributed-feedback semiconductor laser with three phase-shift regions are investigated using a numerical approach. A serious degradation of the stability of the optimum design, having the flattest axial intensity distribution at low output power, is predicted for drive levels beyond a critical value. The lasing wavelength exhibits a sudden shift (wavelength chirping), along with a significant degradation of the single-mode character of the longitudinal-mode spectrum. Thus, the potentialities of this multiple-phase-shift structure to provide a stable narrow-linewidth emission at high output power appear to be less than expected from results calculated for the near-threshold regime. Nevertheless, it is found that a multiple-phase-shift configuration that departs slightly from the optimum case suffices to recover most of the promises expected from this distributed-feedback laser design.

scholarly journals Role of Dislocations in the Process of Degradation of Semiconductor Lasers with Electronic Energy Pumping. Experimental Research

2020 ◽  
Vol 19 (6) ◽  
pp. 507-511
Author(s):  
A. S. Garkavenko ◽  
V. A. Mokritsky ◽  
O. V. Maslov ◽  
A. V. Sokolov
Keyword(s):  
Refractive Index ◽  
Laser Radiation ◽  
Semiconductor Lasers ◽  
Electronic Energy ◽  
The Self ◽  
Generation Threshold ◽  
Degradation Processes ◽  
Energy Pumping ◽  
Self Focusing ◽  
Non Equilibrium

Light self-destruction-degradation of the second type has been observed in samples of semiconductor lasers with electronic  energy  pumping with high  optical  homogeneity and good quality of surface treatment.  In these  samples,  damage appeared in the form of cords perpendicular to the ends of the resonator. According to the current understanding of the passage of powerful light streams through various media, the emergence of narrow light channels is due to the phenomenon of self-focusing. It refers to the fundamental physical mechanisms of propagation of laser radiation and is caused by nonlinear phenomena arising in a medium under the influence of high-power laser radiation. The physical reason for self-focusing is an increase in the refractive index n in a strong light field. Thermal self-focusing is the most probable cause of radiation redistribution in the active region of the crystal. However, it is possible that in the initial stage of the appearance of light channels a certain role is played by the growth of the intensity of radiation in certain sections of the crystal because of the instability of generation or small fluctuations in the pump current density. Then the process acquires an avalanche character, since the localization of the ray in the channel increases the density of light radiation which can lead to overheating of the substance and the activation of the thermal self-focusing mechanism. The experiments performed in this paper have shown that optically homogeneous crystals possess maximum resistance to degradation processes. In them,  the critical power of light destruction is determined by the self-focusing threshold of radiation in a material. Since the nonlinear addition to the refractive index Δn = n2E2 at the self-focusing threshold is determined by the change in the concentration of non-equilibrium carriers ΔN(E2), the value of the maximum fluctuation DΔNmax itself is proportional to the value of the non-equilibrium carrier concentration at the generation threshold ΔNpores and the relative excess of the generation threshold J = (j – jn)/jn. Thus, a low threshold concentration of non-equilibrium carriers is one of the conditions for increasing material resistance to degradation processes. In doped crystals ΔNpores is less than in  pure materials. This, perhaps, explains the rather higher value of Pcritial  in the optimally doped homogeneous n-GaAs. Smaller values of Pcritial in p-type samples doped with zinc can be associated not only with the inhomogeneity of these crystals, but also with large generation thresholds. In addition, the cross section for absorption of radiation by holes is about 3–4 times larger than by electrons, which can also reduce the self-destruction threshold of lasers. At Т = 300 K, the lasing thresholds are higher that naturally reduces the value of the self-focusing threshold.

scholarly journals Angled broad-area semiconductor lasers to emit high output power with good beam quality

2004 ◽  
Author(s):  
Yi-Shin Su ◽  
Chih-Hung Tsai ◽  
Chia-Wei Tsai ◽  
Din P. Tsai ◽  
Ching-Fuh Lin
Keyword(s):  
Semiconductor Lasers ◽  
Output Power ◽  
Beam Quality ◽  
High Output Power ◽  
Broad Area ◽  
Good Beam Quality ◽  
High Output

Stabilization of self-focusing instability in wide-aperture semiconductor lasers

2002 ◽  
Vol 65 (5) ◽  
Author(s):  
V. Voignier ◽  
J. Houlihan ◽  
J. R. O’Callaghan ◽  
C. Sailliot ◽  
G. Huyet
Keyword(s):  
Semiconductor Lasers ◽  
Wide Aperture ◽  
Self Focusing
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