Smart systems based on silicon carbide semiconductor technology for detection of combustible gas leakage in security applications

2018 ◽  
Author(s):  
Andrei Sorin Neamtu ◽  
Jenica Neamtu
Keyword(s):  
Silicon Carbide ◽  
Semiconductor Technology ◽  
Smart Systems ◽  
Gas Leakage ◽  
Security Applications ◽  
Combustible Gas

scholarly journals Ignition source localization in gaseous mixtures explosions expertise

2020 ◽  
Vol 305 ◽  
pp. 00035
Author(s):  
Nicolae Ioan Vlasin ◽  
Gheorghe-Daniel Florea
Keyword(s):  
Technical Expertise ◽  
Geometric Complexity ◽  
Computational Simulations ◽  
Gas Explosion ◽  
Fuel Gas ◽  
Gaseous Mixtures ◽  
Gas Leakage ◽  
Gas Source ◽  
Combustible Gas ◽  
Areas Of Interest

Gas-explosion events in the private or industrial field are usually followed by a technical analysis of the factors that led to their generation. In this respect, INCD INSEMEX Petroşani is accredited for conducting the technical expertise and for the elaboration of the Expertise Report. Starting with on-site findings and sampling, research continues at INCD INSEMEX laboratories, grouped on areas of interest in case management (electrical, ventilation, chemical, pyrotechnics, etc.). Determining the causes of the event implicitly involves establishing the probable source of initiation of the explosive mixture, after discovering the fuel gas source and analyzing how the mixture was formed. Due to the geometric complexity of the space in which the explosion occurred, incident, reflected or compound shock waves generated by explosion can create a footprint of the event that questions the location of the source of initiation. Depending on the possible sources found in the field, the INSEMEX Laboratory of Computational Simulations performs analyzes based on finite elements and finite volumes methods. The elements taken into account in the computational simulations concern both the geometry of the space, the nature of the combustible gas leakage, the dispersion of the gas, and the resulting thermal and mechanical effects.

Platinum–aluminum nitride–silicon carbide diodes as combustible gas sensors

2000 ◽  
Vol 87 (6) ◽  
pp. 3101-3107 ◽  
Author(s):  
A. Samman ◽  
S. Gebremariam ◽  
L. Rimai ◽  
X. Zhang ◽  
J. Hangas ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Aluminum Nitride ◽  
Gas Sensors ◽  
Combustible Gas

Logic Programming for Intelligent Systems

2018 ◽  
pp. 4736-4745
Author(s):  
James D. Jones
Keyword(s):  
Knowledge Representation ◽  
Intelligent Systems ◽  
Technological Changes ◽  
Logic Programs ◽  
Enterprise Information ◽  
Enterprise Information Systems ◽  
Smart Systems ◽  
Financial Applications ◽  
Security Applications ◽  
Robust Framework

In what seem to be never-ending quests for automation, integration, seamlessness, new genres of applications, and “smart systems”, all of which are fueled in part by technological changes, intellectual maturity (or so one thinks), and out-of-the-box thinking that says “surely, there must be a better way”, one dreams of a future. This paper suggests that logic programs employing recent advances in semantics and in knowledge representation formalisms provide a more robust framework in which to develop very intelligent systems in any domain of knowledge or application. The author has performed work applying this paradigm and these reasoning formalisms in the areas of financial applications, security applications, and enterprise information systems.

Point Defects in SiC

2008 ◽  
Vol 1069 ◽  
Author(s):  
Ádám Gali ◽  
Michel Bockstedte ◽  
Ngyen Tien Son ◽  
Erik Janzén
Keyword(s):  
Silicon Carbide ◽  
Electron Paramagnetic Resonance ◽  
Ab Initio ◽  
Point Defects ◽  
Semiconductor Technology ◽  
Tight Control ◽  
Accurate Calculation ◽  
Paramagnetic Resonance ◽  
Absorption And Emission ◽  
Electron Paramagnetic

ABSTRACTTight control of defects is pivotal for semiconductor technology. However, even the basic defects are not entirely understood in silicon carbide. In the recent years significant advances have been reached in identification of defects by combining the experimental tools like electron paramagnetic resonance and photoluminescence with ab initio calculations. We summarize these results and their consequences in silicon carbide based technology. We show recent methodological developments making possible the accurate calculation of absorption and emission signals of defects.

SPICE Modeling of Advanced Silicon Carbide High Temperature Integrated Circuits

2016 ◽  
Vol 858 ◽  
pp. 1070-1073 ◽  
Author(s):  
Akin Akturk ◽  
Neil Goldsman ◽  
Ahayi Ahyi ◽  
Sarit Dhar ◽  
Brendan Cusack ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Integrated Circuits ◽  
Power Electronics ◽  
Process Design ◽  
Wide Band ◽  
Wide Bandgap ◽  
Semiconductor Technology ◽  
Wide Band Gap ◽  
Wide Bandgap Semiconductor ◽  
Generation Power

Due to the wide band-gap and high thermal conductivity of the 4H polytype of silicon carbide (SiC) as well as the maturity of this polytype’s fabrication processes, 4H-SiC offers an extremely attractive wide bandgap semiconductor technology for harsh environment applications spanning a variety of markets. To this end, 4H-SiC power electronics is gradually emerging as the technology of choice for next-generation power electronics; however, relatively limited progress has been made with regards to silicon carbide integrated circuits (ICs). We address this problem by developing fabrication and design methods for the SiC IC components themselves, as well as complementary SPICE type compact models for these components, and thereby facilitate the development of future SiC ICs and Process Design Kits (PDKs).

Risk Analysis for FPSO Vapor Cloud Explosion Considering Domino Effect

2018 ◽  
Author(s):  
Mian Wang ◽  
Liping Sun ◽  
Mingxin Li
Keyword(s):  
Risk Analysis ◽  
Bayesian Network ◽  
Production System ◽  
Gas Production ◽  
Domino Effect ◽  
Gas Leakage ◽  
Combustible Gas ◽  
Vapor Cloud ◽  
Offshore Oil ◽  
Oil Gas

Floating Production Storage and Offloading (FPSO), a significant offshore oil-gas production system, faces a variety of risks in the process of operation. Vapor cloud explosion (VCE) caused by combustible gas leakage is likely to occur on the topside of FPSO. As an initial accident, VCE has an effect on surrounding devices, leading to subsequent consequences and ampliative scale of the accident. The process, known as the domino effect, can result in severe consequences, indicating that it is necessary to analyze characteristics and impacts of the domino effect on FPSO. In this study, the most risky equipment is determined. VCE overpressure on device surfaces caused by gas leakage of this most risky equipment is calculated, and the results are used for analyzing the domino effect based on Bayesian network.

Impact of silicon carbide semiconductor technology in Photovoltaic Energy System

2016 ◽  
Vol 55 ◽  
pp. 971-989 ◽  
Author(s):  
Bejoy N. Pushpakaran ◽  
Anitha Sarah Subburaj ◽  
Stephen B. Bayne ◽  
John Mookken
Keyword(s):  
Silicon Carbide ◽  
Energy System ◽  
Semiconductor Technology ◽  
Photovoltaic Energy

Bulk Crystal Growth, Epitaxy, and Defect Reduction in Silicon Carbide Materials for Microwave and Power Devices

MRS Bulletin ◽  
2005 ◽  
Vol 30 (4) ◽  
pp. 280-286 ◽  
Author(s):  
J. J. Sumakeris ◽  
J. R. Jenny ◽  
A. R. Powell
Keyword(s):  
Silicon Carbide ◽  
Deep Level ◽  
Semiconductor Technology ◽  
Power Devices ◽  
Temperature Dependent ◽  
Forward Voltage ◽  
Defect Reduction ◽  
Bulk Crystal Growth ◽  
Voltage Drift ◽  
Trapping State

AbstractWe discuss continuing materials technology improvements that have transformed silicon carbide from an intriguing laboratory material into a premier manufacturable semiconductor technology. This advancement is demonstrated by reduced micropipe densities as low as 0.22 cm−2 on 3-in.-diameter conductive wafers and 16 cm−2 on 100-mm-diameter conductive wafers. For high-purity semi-insulating materials, we confirm that the carbon vacancy is the dominant deep-level trapping state, and we report very consistent cross-wafer activation energies derived from temperature-dependent resistivity.Warm-wall and hot-wall SiC epitaxy platforms are discussed in terms of capability and applications. Specific procedures that essentially eliminate forward-voltage drift in bipolar SiC devices are presented in detail.

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