Point Defects in SiC

2008 ◽  
Vol 1069 ◽  
Author(s):  
Ádám Gali ◽  
Michel Bockstedte ◽  
Ngyen Tien Son ◽  
Erik Janzén
Keyword(s):  
Silicon Carbide ◽  
Electron Paramagnetic Resonance ◽  
Ab Initio ◽  
Point Defects ◽  
Semiconductor Technology ◽  
Tight Control ◽  
Accurate Calculation ◽  
Paramagnetic Resonance ◽  
Absorption And Emission ◽  
Electron Paramagnetic

ABSTRACTTight control of defects is pivotal for semiconductor technology. However, even the basic defects are not entirely understood in silicon carbide. In the recent years significant advances have been reached in identification of defects by combining the experimental tools like electron paramagnetic resonance and photoluminescence with ab initio calculations. We summarize these results and their consequences in silicon carbide based technology. We show recent methodological developments making possible the accurate calculation of absorption and emission signals of defects.

scholarly journals Combined EPR and Photoluminescence Study of Electron and Proton Irradiated 3C-SiC

2019 ◽  
Vol 963 ◽  
pp. 301-304
Author(s):  
Abdul Al Atem ◽  
Victor Bratus ◽  
Bruno Canut ◽  
Jeremie Lefevre ◽  
Gérard Guillot ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electron Paramagnetic Resonance ◽  
Point Defects ◽  
Epr Spectroscopy ◽  
Proton Irradiation ◽  
Paramagnetic Resonance ◽  
Photoluminescence Study ◽  
Infra Red ◽  
Cubic Silicon Carbide ◽  
Electron Paramagnetic

Combined Photoluminescence (PL) and electron paramagnetic resonance (EPR) spectroscopy have been used to characterize cubic silicon carbide (3C-SiC) samples after electron and proton irradiation. We have studied the effects of the thermal annealing (500-1000°C) on the PL intensity in the visible and the near infra-red (NIR) ranges and identified the point defects formation after these two processes of irradiation.

Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Properties of the Interface

2009 ◽  
Vol 156-158 ◽  
pp. 145-148 ◽  
Author(s):  
Daniel Kropman ◽  
E. Mellikov ◽  
K. Lott ◽  
Tiit Kärner ◽  
Ivo Heinmaa ◽  
...  
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Magnetic Resonance ◽  
Fermi Level ◽  
Point Defects ◽  
Interface Properties ◽  
Hydrogen Ions ◽  
Paramagnetic Resonance ◽  
Proposed Model ◽  
P Type ◽  
Electron Paramagnetic

The results of investigation of the point defect generation and interaction with impurities in the Si-SiO2 system during the process of its formation by means of electron paramagnetic resonance (EPR) and nucleous magnetic resonance (NMR) technique are presented. It has been shown that the diference in point defects interaction with hydrogen at the Si-SO2 interface with n- and p-type conductivity are connected with the sign of hydrogen ions incorporation dependence on the Fermi level position in accordance with the proposed model. The interface properties may be improved by laser irradiation.

High-Temperature Stable Multi-Defect Clusters in Neutron Irradiated Silicon Carbide: Electron Paramagnetic Resonance Study

2005 ◽  
Vol 483-485 ◽  
pp. 489-492 ◽  
Author(s):  
P.G. Baranov ◽  
Ivan V. Ilyin ◽  
Marina V. Muzafarova ◽  
E.N. Mokhov ◽  
S.G. Konnikov
Keyword(s):  
Silicon Carbide ◽  
Electron Paramagnetic Resonance ◽  
High Temperature ◽  
Electron Paramagnetic Resonance Study ◽  
High Temperature Annealing ◽  
Axially Symmetric ◽  
Paramagnetic Resonance ◽  
Defect Clusters ◽  
Defect Complexes ◽  
Electron Paramagnetic

The high-temperature stable defect complexes in 6H-SiC crystals created by heavy neutron irradiation and following high-temperature annealing have been discovered by EPR. After annealing at 1500°C at least five new axially symmetric centers with the electron spin S = 1/2 and S = 1 were shown to arise in 6H-SiC crystals. The striking feature of all discovered centers is a strong hyperfine interaction with a great number (up to twelve) of equivalent host Si (C) atoms. Two models, a four-vacancy complex VSi-3VC, and a split-interstitial antisite (C2)Si or a pair of two antisites (C2)Si-SiC are discussed. There is a good probability that some of new centers could be related to the famous D1 and DII centers. After annealing at 2000°C the dc1-dc4 centers disappeared and a new triplet center labeled as N-V in the form of a silicon vacancy and a nitrogen atom in neighboring carbon substitutional position has been observed. The parameters of this center are similar to that for well-known N-V center in diamond.

Electron paramagnetic resonance of the scandium acceptor in 6H and 4H silicon carbide

2000 ◽  
Vol 15 (1) ◽  
pp. 55-60 ◽  
Author(s):  
M März ◽  
S Greulich-Weber ◽  
J-M Spaeth ◽  
E N Mokhov ◽  
E N Kalabukhova
Keyword(s):  
Silicon Carbide ◽  
Electron Paramagnetic Resonance ◽  
Paramagnetic Resonance ◽  
Electron Paramagnetic

Electron Paramagnetic Resonance of the Scandium Acceptor in 4H and 6H Silicon Carbide

2000 ◽  
Vol 338-342 ◽  
pp. 809-812 ◽  
Author(s):  
Siegmund Greulich-Weber ◽  
M. März ◽  
Johann Martin Spaeth ◽  
E.N. Mokhov ◽  
Ekaterina N. Kalabukhova
Keyword(s):  
Silicon Carbide ◽  
Electron Paramagnetic Resonance ◽  
Paramagnetic Resonance ◽  
Electron Paramagnetic
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