A study of temperature dependent current-voltage (I-V-T) characteristics in Ni/(-201) β-Ga2O3 Schottky diode (Conference Presentation)

2018 ◽  
Author(s):  
Jianyi Gao ◽  
Zheng Xu ◽  
Siwei Li ◽  
Srabanti Chowdhury
Keyword(s):  
Schottky Diode ◽  
Temperature Dependent ◽  
Current Voltage

scholarly journals Analysis of temperature dependent current-voltage and capacitance-voltage characteristics of an Au/V2O5/n-Si Schottky diode

AIP Advances ◽  
2017 ◽  
Vol 7 (8) ◽  
pp. 085313 ◽  
Author(s):  
Somnath Mahato ◽  
Debaleen Biswas ◽  
Luis G. Gerling ◽  
Cristobal Voz ◽  
Joaquim Puigdollers
Keyword(s):  
Schottky Diode ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Capacitance Voltage

Temperature-Dependent Logic Failure in a GaAs Power Amplifier-Duplexer Module Caused by a Subtle Parasitic Schottky Diode

2014 ◽  
Author(s):  
Rose Emergo ◽  
Steve Brockett ◽  
Pat Hamilton
Keyword(s):  
Power Amplifier ◽  
Schottky Diode ◽  
Production Test ◽  
Temperature Dependent ◽  
Cold Temperatures ◽  
Collector Junction ◽  
Power Mode ◽  
The Difference ◽  
Base Contact ◽  
Single Power

Abstract A single power amplifier-duplexer device was submitted by a customer for analysis. The device was initially considered passing when tested against the production test. However, further electrical testing suggested that the device was stuck in a single power mode for a particular frequency band at cold temperatures only. This paper outlines the systematic isolation of a parasitic Schottky diode formed by a base contactcollector punch through process defect that pulled down the input of a NOR gate leading to the incorrect logic state. Note that this parasitic Schottky diode is parallel to the basecollector junction. It was observed that the logic failure only manifested at colder temperatures because the base contact only slightly diffused into the collector layer. Since the difference in the turn-on voltages between the base-collector junction and the parasitic Schottky diode increases with decreasing temperature, the effect of the parasitic diode is only noticeable at lower temperatures.

scholarly journals Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET

Electronics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 735
Author(s):  
Fortunato Pezzimenti ◽  
Hichem Bencherif ◽  
Giuseppe De Martino ◽  
Lakhdar Dehimi ◽  
Riccardo Carotenuto ◽  
...  
Keyword(s):  
Drain Current ◽  
Oxide Semiconductor ◽  
Temperature Dependent ◽  
Channel Mobility ◽  
Blocking Voltage ◽  
Current Voltage ◽  
Wide Range ◽  
Temperature Ranges ◽  
Joint Contribution ◽  
State Resistance

A numerical simulation study accounting for trap and defect effects on the current-voltage characteristics of a 4H-SiC-based power metal-oxide-semiconductor field effect transistor (MOSFET) is performed in a wide range of temperatures and bias conditions. In particular, the most penalizing native defects in the starting substrate (i.e., EH6/7 and Z1/2) as well as the fixed oxide trap concentration and the density of states (DoS) at the 4H-SiC/SiO2 interface are carefully taken into account. The temperature-dependent physics of the interface traps are considered in detail. Scattering phenomena related to the joint contribution of defects and traps shift the MOSFET threshold voltage, reduce the channel mobility, and penalize the device current capabilities. However, while the MOSFET on-state resistance (RON) tends to increase with scattering centers, the sensitivity of the drain current to the temperature decreases especially when the device is operating at a high gate voltage (VGS). Assuming the temperature ranges from 300 K to 573 K, RON is about 2.5 MΩ·µm2 for VGS > 16 V with a percentage variation ΔRON lower than 20%. The device is rated to perform a blocking voltage of 650 V.

The electrical characterization of Ag/PTCDA/PEDOT:PSS/p-Si Schottky diode by current–voltage characteristics

2013 ◽  
Vol 415 ◽  
pp. 77-81 ◽  
Author(s):  
Muhammad Tahir ◽  
Muhammad Hassan Sayyad ◽  
Fazal Wahab ◽  
Dil Nawaz Khan ◽  
Fakhra Aziz
Keyword(s):  
Schottky Diode ◽  
Electrical Characterization ◽  
Current Voltage ◽  
Current Voltage Characteristics

Study on Schottky Diode Characteristics Improving by X-Ray Irradiation

2013 ◽  
Vol 717 ◽  
pp. 113-116
Author(s):  
Sani Klinsanit ◽  
Itsara Srithanachai ◽  
Surada Ueamanapong ◽  
Sunya Khunkhao ◽  
Budsara Nararug ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Diode ◽  
Room Temperature ◽  
The Other ◽  
Low Power Consumption ◽  
Initial Value ◽  
X Ray ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

The effect of soft X-ray irradiation to the Schottky diode properties was analyzed in this paper. The built-in voltage, leakage current, and work function of Schottky diode were investigated. The current-voltage characteristics of the Schottky diode are measured at room temperature. After irradiation at 70 keV for 55 seconds the forward current and leakage current are increase slightly. On the other hand, the built-in voltage is decrease from the initial value about 0.12 V. Consequently, this method can cause the Schottky diode has low power consumption. The results show that soft X-ray can improve the characteristics of Schottky diode.

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