Porous silicon devices and applications (Conference Presentation)

2018 ◽  
Author(s):  
Girija Gaur ◽  
Dimitry Koktysh ◽  
Sharon Weiss ◽  
Shuren Hu
Keyword(s):  
Porous Silicon ◽  
Silicon Devices

Visible Electroluminescence of Porous Silicon Devices with a Solid State Contact

1991 ◽  
Vol 256 ◽  
Author(s):  
A. Richter ◽  
W. Lang ◽  
P. Steiner ◽  
F. Kozlowski ◽  
H. Sandmaier
Keyword(s):  
Solid State ◽  
Porous Silicon ◽  
Visible Light ◽  
Ultraviolet Light ◽  
Anodic Dissolution ◽  
Porous Layer ◽  
Electrical Current ◽  
Light Emitting ◽  
Silicon Devices

ABSTRACTThe photoluminescence and electroluminescence of light emitting porous silicon (LEPOS) is described. The porous silicon is made by anodic dissolution of silicon in HF with an applied electrical current and illumination with visible light. Photoluminescence is observed using ultraviolet light, visible electroluminescence is achieved by applying a voltage to a solid state contact on top of the porous layer. The luminescence, the structure and the composition of the LEPOS are studied.

Visible Electroluminescence from Al-Porous Silicon Reverse Bias Diodes Formed on the Base of Degenerate N-Type Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
S. Lazarouk ◽  
V. Bondarenko ◽  
P. Pershukevich ◽  
S. La Monica ◽  
G. Maiello ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Reverse Bias ◽  
Light Emission ◽  
Electrochemical Etching ◽  
Forward Bias ◽  
Applied Bias ◽  
Light Emitting ◽  
Type Silicon ◽  
Silicon Devices ◽  
Preparation Conditions

ABSTRACTWe demonstrate current induced visible light emission from Schottky junctions between aluminium electrodes and porous silicon formed by electrochemical etching of degenerate n+ -type silicon. HF concentration and anodizing current were chosen to yield preparation conditions in the transition region between electropolishing and porous silicon formation regimes. The light emitting diodes were formed by magnetron sputtering of aluminum on the porous silicon surface. Visible electroluminescence (EL) was recorded when dc or ac voltages larger than 4 V were applied between the aluminium electrodes. The visible EL appears in the dark, at the edge of the electrodes at a reverse bias of 5-6 V. The intensity of emitted light increases with applied voltage; at applied bias higher than 7 V the light emitted was observable by the naked eye at normal daylight. Compared to forward bias solid state contact porous silicon devices, the structure has an increased stability (after 100 hours of continuous operation under a 7 V reverse bias, no appreciable modification was observed in emission intensity). The main features of this electroluminescence are very similar to the ones observed under avalanche breakdown of silicon p-n junctions.

scholarly journals Process for integration of energetic porous silicon devices

2015 ◽  
Vol 660 ◽  
pp. 012067 ◽  
Author(s):  
Matthew H Ervin ◽  
Brian Isaacson ◽  
Louis B Levine
Keyword(s):  
Porous Silicon ◽  
Silicon Devices

Biologically Interfaced Porous Silicon Devices

2000 ◽  
Vol 182 (1) ◽  
pp. 505-513 ◽  
Author(s):  
A.H. Mayne ◽  
S.C. Bayliss ◽  
P. Barr ◽  
M. Tobin ◽  
L.D. Buckberry
Keyword(s):  
Porous Silicon ◽  
Silicon Devices

Negative differential resistance in porous silicon devices at room temperature

2015 ◽  
Vol 79 ◽  
pp. 45-53 ◽  
Author(s):  
Oscar Marin ◽  
Victor Toranzos ◽  
Raul Urteaga ◽  
David Comedi ◽  
Roberto R. Koropecki
Keyword(s):  
Porous Silicon ◽  
Negative Differential Resistance ◽  
Room Temperature ◽  
Differential Resistance ◽  
Silicon Devices

scholarly journals Effect of external gettering with porous silicon on the electrical properties of Metal–Oxide–Silicon devices

2009 ◽  
Vol 2 (3) ◽  
pp. 983-988 ◽  
Author(s):  
N. Khedher ◽  
A. Ben Jaballah ◽  
M. Bouaïcha ◽  
H. Ezzaouia ◽  
R. Bennnaceur
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Metal Oxide ◽  
Silicon Devices ◽  
Metal Oxide Silicon

Structural, optical and electrical properties of SnO2:Sb:Tb3 /porous silicon devices

2003 ◽  
Vol 18 (7) ◽  
pp. 703-707 ◽  
Author(s):  
A Moadhen ◽  
H Elhouichet ◽  
S Romdhane ◽  
M Oueslati ◽  
J A Roger ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Optical And Electrical Properties ◽  
Silicon Devices

Photon, Electron and Utlrasonic Emission from Nanocrystalline Porous Silicon Devices

2002 ◽  
Vol 737 ◽  
Author(s):  
N. Koshida ◽  
B. Gelloz ◽  
A. Kojima ◽  
T. Migita ◽  
Y. Nakajima ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Nanocrystalline Silicon ◽  
Cold Electron ◽  
Flat Panel Display ◽  
Electronic Effects ◽  
Flat Panel ◽  
Thermally Induced ◽  
Cold Cathodes ◽  
Silicon Devices ◽  
Technological Potential

ABSTRACTFor quantum-sized nanocrystalline silicon (nc-Si), various optical and electronic effects have been clarified in addition to a significant band gap widening. As typical examples of these induced effects, some emission properties of nanocrystalline porous silicon (PS) are described in this paper including the present status of application studies. The first one is electroluminescence (EL) of PS diodes. It is shown that following a drastic improvement in the external quantum and power efficiencies, stability has been significantly enhanced by the formation of covalent termination nc-Si surfaces. Next topic is the cold electron emission from PS diodes. When the nanostructure of the PS drift layer is appropriately controlled, injected electrons are accelerated ballistically toward the outer surface and emitted via tunneling through a thin-film top electrode perpendicular to the device surface as energetic electrons. As an efficient surface-emitting electron source, there are many advantages in this emitter over the conventional cold cathodes. The applicability of this emitter to either vacuum-type or solid-state flat-panel display is demonstrated. Finally, the usefulness of a PS device as a thermally induced ultrasonic emitter is presented on a basis of its fundamental characterizations. Technological potential of this emitter for functional acoustic devices is also discussed.

Technologies for porous silicon devices

1995 ◽  
Vol 10 (5) ◽  
pp. 698-702 ◽  
Author(s):  
A Gupta ◽  
V K Jain ◽  
C R Jalwania ◽  
G K Singhal ◽  
O P Arora ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Devices
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