E-beam pumped ultraviolet light sources based on ultrathin GaN quantum wells (Conference Presentation)

2018 ◽  
Author(s):  
Xinqiang Wang ◽  
Xin Rong ◽  
Yixin Wang ◽  
S.V. Ivanov ◽  
B. Shen
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Sources

Growth and Characterization of AlGaN Multiple Quantum Wells for Electron-Beam Target for Deep-Ultraviolet Light Sources

2013 ◽  
Vol 52 (1S) ◽  
pp. 01AF03 ◽  
Author(s):  
Fumitsugu Fukuyo ◽  
Shunsuke Ochiai ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
Harumasa Yoshida ◽  
...  
Keyword(s):  
Electron Beam ◽  
Quantum Wells ◽  
Ultraviolet Light ◽  
Multiple Quantum Wells ◽  
Light Sources ◽  
Multiple Quantum ◽  
Deep Ultraviolet

Quantum fountain infrared light sources based on intersubband emissions in quantum wells

1999 ◽  
Vol 09 (PR2) ◽  
pp. Pr2-161
Author(s):  
F. H. Julien ◽  
P. Boucaud ◽  
S. Sauvage ◽  
O. Gauthier-Lafaye ◽  
Z. Moussa
Keyword(s):  
Quantum Wells ◽  
Infrared Light ◽  
Light Sources

Enhancing the conversion efficiency of extreme ultraviolet light sources using a 2 µm-wavelength laser

2021 ◽  
Author(s):  
Yun Yuan ◽  
Yan-Yun Ma ◽  
Wenpeng Wang ◽  
Shijia Chen ◽  
Ye Cui ◽  
...  
Keyword(s):  
Energy Conversion ◽  
Emission Spectrum ◽  
Ultraviolet Light ◽  
Conversion Efficiency ◽  
Extreme Ultraviolet ◽  
Light Sources ◽  
Band Emission ◽  
Percentage Points ◽  
Hydrodynamic Code ◽  
Extreme Ultraviolet Light

Abstract In this study, we use the FLASH radiation hydrodynamic code and the FLYCHK atomic code to investigate the energy conversion and spectra associated with laser–Sn target interactions with 1 µm and 2 µm wavelength lasers. We found that the conversion efficiency (CE) reached as much as 3.38% with the 2 µm laser, which is 1.48 percentage points higher than the 1 µm laser (CE = 1.9%). In addition, we analyzed the contribution of dominant ionization states to the emission spectrum for both lasers. We observed that the growths of the out-of-band emission eventually led to a broadening of the spectrum, resulting in a reduction of SP for the 1 µm laser. By contrast, the emission main peaks were all centered near 13.5nm for the 2 µm laser, which is beneficial for efficient emission of light with a 13.5 nm wavelength (relevant for nanolithographic applications).

Effects of V/III ratio of InGaN quantum well at high growth temperature for near ultraviolet light emitting diodes

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Mohd Ann Amirul Zulffiqal Md Sahar ◽  
Zainuriah Hassan ◽  
Sha Shiong Ng ◽  
Way Foong Lim ◽  
Khai Shenn Lau ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Output ◽  
Emission Peak ◽  
Organic Chemical ◽  
Peak Wavelength ◽  
Content Type ◽  
Light Emitting ◽  
Near Ultraviolet

Purpose The aims of this paper is to study the effects of the V/III ratio of indium gallium nitride (InGaN) quantum wells (QWs) on the structural, optical and electrical properties of near-ultraviolet light-emitting diode (NUV-LED). Design/methodology/approach InGaN-based NUV-LED is successfully grown on the c-plane patterned sapphire substrate at atmospheric pressure using metal organic chemical vapor deposition. Findings The indium composition and thickness of InGaN QWs increased as the V/III ratio increased from 20871 to 11824, according to high-resolution X-ray diffraction. The V/III ratio was also found to have an important effect on the surface morphology of the InGaN QWs and thus the surface morphology of the subsequent layers. Apart from that, the electroluminescence measurement revealed that the V/III ratio had a major impact on the light output power (LOP) and the emission peak wavelength of the NUV-LED. The LOP increased by up to 53% at 100 mA, and the emission peak wavelength of the NUV-LED changed to a longer wavelength as the V/III ratio decreased from 20871 to 11824. Originality/value This study discovered a relation between the V/III ratio and the properties of QWs, which resulted in the LOP enhancement of the NUV-LED. High TMIn flow rates, which produced a low V/III ratio, contribute to the increased LOP of NUV-LED.

scholarly journals GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells

2015 ◽  
Vol 23 (7) ◽  
pp. A337 ◽  
Author(s):  
Hung-Ming Chang ◽  
Wei-Chih Lai ◽  
Wei-Shou Chen ◽  
Shoou-Jinn Chang
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes

Deep-ultraviolet light emission properties of nonpolar M-plane AlGaN quantum wells

2014 ◽  
Vol 105 (5) ◽  
pp. 053104 ◽  
Author(s):  
Ryan G. Banal ◽  
Yoshitaka Taniyasu ◽  
Hideki Yamamoto
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emission ◽  
Emission Properties ◽  
Deep Ultraviolet
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