scholarly journals Generation of nonequilibrium optical phonons in GaAs/AlAs quantum wells by intrasubband and intersubband scatterings

1992 ◽  
Author(s):  
Keith R. Wald
Keyword(s):  
Quantum Wells ◽  
Optical Phonons

Generation of TeraHertz radiation assisted by optical phonons in nitride-based quantum wells and heterolayers

2008 ◽  
Vol 5 (1) ◽  
pp. 236-239
Author(s):  
P. Shiktorov ◽  
E. Starikov ◽  
V. Gružinskis ◽  
L. Varani ◽  
C. Palermo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Terahertz Radiation ◽  
Optical Phonons

scholarly journals Многократное изменение электрон-фононного взаимодействия в квантовых ямах с диэлектрически различными барьерами

2022 ◽  
Vol 56 (1) ◽  
pp. 101
Author(s):  
А.Ю. Маслов ◽  
О.В. Прошина
Keyword(s):  
Quantum Wells ◽  
Charged Particles ◽  
Strong Interactions ◽  
Asymmetric Structure ◽  
Optical Phonons ◽  
Phonon Modes ◽  
Phonon Interaction ◽  
Barrier Materials ◽  
Electron Phonon Interaction ◽  
Order Of Magnitude

Abstract The specific features of the interaction of charged particles with polar optical phonons have been studied theoretically for quantum wells with the barriers that are asymmetric in their dielectric properties. It is shown that the interaction with interface phonon modes makes the greatest contribution in narrow quantum wells. The parameters of the electron-phonon interaction were found for the cases of different values of the phonon frequencies in the barrier materials. It turned out that a significant (by almost an order of magnitude) change in the parameters of the electron-phonon interaction can occur in such structures. This makes it possible, in principle, to trace the transition from weak to strong interactions in quantum wells of the same type but with different compositions of barrier materials. The conditions are found under which an enhancement of the electron-phonon interaction is possible in an asymmetric structure in comparison with a symmetric one with the barriers of the same composition.

Free-carrier screening of the interaction between excitons and longitudinal-optical phonons inInxGa1−xAs-InP quantum wells

1987 ◽  
Vol 35 (11) ◽  
pp. 5925-5928 ◽  
Author(s):  
M. S. Skolnick ◽  
K. J. Nash ◽  
P. R. Tapster ◽  
D. J. Mowbray ◽  
S. J. Bass ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Longitudinal Optical ◽  
Carrier Screening ◽  
Free Carrier ◽  
Optical Phonons

Coupling between charge-density excitations and polar optical phonons in single quantum wells revisited

2006 ◽  
Vol 73 (4) ◽  
Author(s):  
P. Giudici ◽  
A. R. Goñi ◽  
C. Thomsen ◽  
K. Eberl ◽  
M. Hauser
Keyword(s):  
Charge Density ◽  
Quantum Wells ◽  
Optical Phonons ◽  
Single Quantum

Raman scattering due to interface optical phonons in GaAs/AlAs multiple quantum wells

1995 ◽  
Vol 51 (24) ◽  
pp. 17728-17739 ◽  
Author(s):  
A. J. Shields ◽  
M. P. Chamberlain ◽  
M. Cardona ◽  
K. Eberl
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optical Phonons

Scattering Processes with the Emission of Longitudinal Optical Phonons in the Landau Level System In GaAs/AlGaAs Quantum Well

2021 ◽  
Author(s):  
Ngo Vinh Doan The ◽  
Trung Le Canh
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Quantum Wells ◽  
Golden Rule ◽  
Longitudinal Optical ◽  
Optical Phonons ◽  
Scattering Rate ◽  
Quantizing Magnetic Field ◽  
Scattering Time ◽  
The Magnetic Field

Abstract The scattering processes of longitudinal optical phonons in GaAs/AlGaAs quantum wells in a quantizing magnetic field are considered. The time of intrasubband scattering between Landau levels is calculated by using Fermi's golden rule. The dependence of the scattering rate on the magnitude of the magnetic field has been shown and the magnetic field can suppress scattering processes on longitudinal optical phonons. It is found that the scattering time depends linearly on the width of the quantum well.

Sign in / Sign up

Export Citation Format

Share Document