Free-carrier screening of the interaction between excitons and longitudinal-optical phonons inInxGa1−xAs-InP quantum wells

1987 ◽  
Vol 35 (11) ◽  
pp. 5925-5928 ◽  
Author(s):  
M. S. Skolnick ◽  
K. J. Nash ◽  
P. R. Tapster ◽  
D. J. Mowbray ◽  
S. J. Bass ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Longitudinal Optical ◽  
Carrier Screening ◽  
Free Carrier ◽  
Optical Phonons

Scattering Processes with the Emission of Longitudinal Optical Phonons in the Landau Level System In GaAs/AlGaAs Quantum Well

2021 ◽  
Author(s):  
Ngo Vinh Doan The ◽  
Trung Le Canh
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Quantum Wells ◽  
Golden Rule ◽  
Longitudinal Optical ◽  
Optical Phonons ◽  
Scattering Rate ◽  
Quantizing Magnetic Field ◽  
Scattering Time ◽  
The Magnetic Field

Abstract The scattering processes of longitudinal optical phonons in GaAs/AlGaAs quantum wells in a quantizing magnetic field are considered. The time of intrasubband scattering between Landau levels is calculated by using Fermi's golden rule. The dependence of the scattering rate on the magnitude of the magnetic field has been shown and the magnetic field can suppress scattering processes on longitudinal optical phonons. It is found that the scattering time depends linearly on the width of the quantum well.

Free carrier scattering from quasi-2D optical phonons in semiconductor quantum wells and superlattices

1988 ◽  
Vol 4 (4-5) ◽  
pp. 577-580 ◽  
Author(s):  
L. Wendler ◽  
R. Haupt ◽  
F. Bechstedt ◽  
H. Rücker ◽  
R. Enderlein
Keyword(s):  
Quantum Wells ◽  
Free Carrier ◽  
Optical Phonons ◽  
Semiconductor Quantum Wells ◽  
Carrier Scattering

ELECTRIC FIELD EFFECTS ON POLARONS WITH SPATIALLY DEPENDENT MASS IN PARABOLIC QUANTUM WELLS

2004 ◽  
Vol 18 (22) ◽  
pp. 2991-2999 ◽  
Author(s):  
FENG-QI ZHAO ◽  
ZI-ZHENG GUO
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Effective Mass ◽  
Energy Levels ◽  
Longitudinal Optical ◽  
Optical Phonons ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Dependent Mass ◽  
Parabolic Quantum Wells

The free polaron energy levels in finite GaAs / Al x Ga 1-x As parabolic quantum wells have been investigated by a modified variational method. The effect of the electric field, the electron-phonon interaction including the longitudinal optical phonons and the four branches of interface optical phonons, and the effect of spatial dependent effective mass have been considered in the calculation. The dependence of the energies of free polarons on the alloy composition x is given. The numerical results for finite GaAs / Al x Ga 1-x As parabolic quantum wells are obtained and discussed. The results show that the effect of the electric field and the interface optical phonons as well as the longitudinal optical phonons on the energy levels is obvious. One can find that the effect of the spatially dependent effective masses on the energy levels in finite parabolic quantum wells is considerable except for large well width. Thus, the electron-phonon interaction and the effect of the spatially dependent effective mass should not be neglected for the study of the electron state problem in finite parabolic quantum wells.

Binding Energies of Excitons in GaAs/AlAs Quantum Wells Under Pressure

2003 ◽  
Vol 17 (16) ◽  
pp. 863-870 ◽  
Author(s):  
Guojun Zhao ◽  
X. X. Liang ◽  
S. L. Ban
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Pressure Effect ◽  
Interpolation Method ◽  
Linear Interpolation ◽  
Longitudinal Optical ◽  
Variational Calculation ◽  
Binding Energies ◽  
Optical Phonons ◽  
Phonon Interaction

The binding energy of an exciton in the GaAs/AlAs quantum well is discussed including the influence of interface optical phonons and bulk longitudinal optical phonons confined in the well under hydrostatic pressure. The dependence of the phonon energies on pressure is considered using a linear interpolation method to obtain the pressure effect on the exciton binding energy by a variational calculation. The result shows that the polaronic effect on the exciton binding energies cannot be neglected and the pressure effect on the exciton-phonon interaction is obvious.

RECENT DEVELOPMENTS ON ELECTRON-PHONON INTERACTIONS IN STRUCTURES FOR ELECTRONIC AND OPTOELECTRONIC DEVICES

1998 ◽  
Vol 09 (01) ◽  
pp. 281-312 ◽  
Author(s):  
M. DUTTA ◽  
M. A. STROSCIO ◽  
K. W. KIM
Keyword(s):  
Quantum Wells ◽  
Quantum Wires ◽  
Quantum Cascade Lasers ◽  
Optoelectronic Devices ◽  
Longitudinal Optical ◽  
Optical Phonons ◽  
Phonon Modes ◽  
Cross Sectional ◽  
Device Applications ◽  
Dielectric Continuum

As device dimensions in electronic and optoelectronic devices are reduced, the characteristics and interactions of dimensionally-confined longitudinal-optical (LO) and acoustic phonons deviate substantially from those of bulk semiconductors. Furthermore, as würtzite materials are applied increasingly in electronic and optoelectronic devices it becomes more important to understand the phonon modes in such systems. This account emphasizes the properties of bulk optical phonons in würtzite structures, the properties of LO-phonon modes and acoustic-phonon modes arising in polar-semiconductor quantum wells, superlattices, quantum wires and quantum dots, with a variety of cross sectional geometries and, lastly, the properties of optical phonons in würtzite materials as predicted by the dielectric continuum model. Emphasis is placed on the dielectric continuum and elastic continuum models of bulk, confined and interface phonons. This article emphasizes device applications of confined phonons in GaAs-based systems and provides a brief discussion of carrier-LO-phonon interactions in bulk würtzite structures. This account also includes discussions on the use of metal-semiconductor heterointerfaces to reduce scattering and on the role of phonons in Fröhlich, deformation and piezoelectric interactions in electronic and optoelectronic structures; specific device applications high-lighted here include quantum cascade lasers, mesoscopic devices, thermoelectric devices and optically-pumped resonant intersubband lasers.

Intense terahertz radiation from longitudinal optical phonons in GaAs∕AlAs multiple quantum wells

2005 ◽  
Vol 87 (9) ◽  
pp. 093102 ◽  
Author(s):  
K. Mizoguchi ◽  
T. Furuichi ◽  
O. Kojima ◽  
M. Nakayama ◽  
S. Saito ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Terahertz Radiation ◽  
Longitudinal Optical ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optical Phonons
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