Determination of the voltage-dependent dielectric properties of piezoelectric materials with a high-voltage/high-power electromechanical impedance analyzer

1996 ◽  
Author(s):  
R. Montes ◽  
Kevin E. Castanien ◽  
Chen Liang ◽  
Mathieu V. Bergh
Keyword(s):  
Dielectric Properties ◽  
High Voltage ◽  
High Power ◽  
Piezoelectric Materials ◽  
Impedance Analyzer ◽  
Electromechanical Impedance ◽  
Voltage Dependent

scholarly journals Determination of dV/dt and dI/dt characteristics for high voltage 4H-SiC Schottky diodes with different types of metal-polymeric packages

2020 ◽  
Vol 1679 ◽  
pp. 022045
Author(s):  
S B Rybalka ◽  
E A Kulchenkov ◽  
A A Demidov ◽  
N A Zhemoedov ◽  
A Yu Drakin ◽  
...  
Keyword(s):  
High Voltage ◽  
Schottky Diodes ◽  
Different Types

scholarly journals High Power Impulse Magnetron Sputtering of In2O3/Sn Cold Sprayed Composite Target

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1228
Author(s):  
Marcin Winnicki ◽  
Artur Wiatrowski ◽  
Michał Mazur
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Voltage ◽  
High Power ◽  
Power Supply ◽  
Indium Tin Oxide ◽  
Volume Ratio ◽  
Cold Spraying ◽  
High Voltage Power Supply ◽  
Composite Target

High Power Impulse Magnetron Sputtering (HiPIMS) was used for deposition of indium tin oxide (ITO) transparent thin films at low substrate temperature. A hybrid-type composite target was self-prepared by low-pressure cold spraying process. Prior to spraying In2O3 and oxidized Sn powders were mixed in a volume ratio of 3:1. Composite In2O3/Sn coating had a mean thickness of 900 µm. HiPIMS process was performed in various mixtures of Ar:O2: (i) 100:0 vol.%, (ii) 90:10 vol.%, (iii) 75:25 vol.%, (iv) 50:50 vol.%, and (v) 0:100 vol.%. Oxygen rich atmosphere was necessary to oxidize tin atoms. Self-design, simple high voltage power switch capable of charging the 20 µF capacitor bank from external high voltage power supply worked as a power supply for an unbalanced magnetron source. ITO thin films with thickness in the range of 30–40 nm were obtained after 300 deposition pulses of 900 V and deposition time of 900 s. The highest transmission of 88% at λ = 550 nm provided 0:100 vol. % Ar:O2 mixture, together with the lowest resistivity of 0.03 Ω·cm.

Analysis of high voltage operation of gallium arsenide photoconductive switches used in high power applications

1999 ◽  
Vol 86 (3) ◽  
pp. 1754-1758 ◽  
Author(s):  
N. E. Islam ◽  
E. Schamiloglu ◽  
C. B. Fleddermann ◽  
J. S. H. Schoenberg ◽  
R. P. Joshi
Keyword(s):  
Gallium Arsenide ◽  
High Voltage ◽  
High Power ◽  
Photoconductive Switches

Spectrographic Analysis of Cast Iron Using Fused Buttons

1971 ◽  
Vol 25 (3) ◽  
pp. 342-344 ◽  
Author(s):  
John P. Cummings ◽  
Ronald H. Hall ◽  
Ronald J. Plenzler
Keyword(s):  
Weight Loss ◽  
Cast Iron ◽  
High Voltage ◽  
Analytical Method ◽  
White Cast Iron ◽  
Inert Atmosphere ◽  
Spectrographic Analysis ◽  
Analytical Results ◽  
Good Homogeneity

This paper presents an analytical method for the determination of minor metals in white cast iron fused buttons. This method enables the measurement of metals in cast iron with rapidity and excellent analytical results. Buttons of 40 g appear to be ideal but smaller button samples can be tolerated. The fused buttons have good homogeneity, very slight weight loss, and no significant change in composition. Metal cast spectrochemical samples are analyzed in an inert atmosphere utilizing a high voltage spark.

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