Dependence of resistive switching on ion-migration process in organic electrochemical metallization memory (Conference Presentation)

Author(s):  
Sin-Hyung Lee ◽  
Hea-Lim Park ◽  
Chang-Min Keum ◽  
Min-Hoi Kim ◽  
Sin-Doo Lee
1973 ◽  
Vol 28 (7) ◽  
pp. 1226-1227 ◽  
Author(s):  
B. A. Bilal

In a countercurrent ion migration process the ion of an element (e. g. a metal cation) can form various unstable complexes with the anion of the countercurrent electrolyte. The total concentration of such an element in its stationary and locally constant distribution in a countercurrent ion migration column is then determined by the average mobility of all equilibrated species containing this element. From stationary distributions in their dependence on concentration the mobilities of the various species can be determined if the constants of the different equilibrium stages are known and vice versa.


2014 ◽  
Vol 953-954 ◽  
pp. 1668-1672
Author(s):  
Wen Xian Liu ◽  
Cheng Yu Tian

experimental research is carried out in this article under typical environmental conditions, by simulating the actual environmental conditions, the migration process and its characteristics in sedimentary distribution of erosion medium such as chloride ion and sulfate ion of self compacting concrete is discussed, ion transfer characteristic and migration model of ionic medium in concrete is established.


2012 ◽  
Vol 59 (9) ◽  
pp. 2461-2467 ◽  
Author(s):  
Federico Nardi ◽  
Stefano Larentis ◽  
Simone Balatti ◽  
David C. Gilmer ◽  
Daniele Ielmini

2020 ◽  
Vol 20 (10) ◽  
pp. 6489-6494
Author(s):  
Batkhuyag Khorolsuren ◽  
Shenmin Lu ◽  
Chao Sun ◽  
Fang Jin ◽  
Wenqin Mo ◽  
...  

To study the substitutability of noble metal electrodes in memristors, the effect of Pt/HfO2/Ti structure on the replacement of noble metal electrode Pt by different electrodes was studied. Compared with the unsubstituted devices, the HfO2-based RRAM devices with TiN and TiOxNy electrodes devices showed good resistive switching performance and resistive switching mechanism under oxygen ion migration. Five devices were prepared, and their resistive switching mechanism under oxygen ion migration was investigated. Moreover, besides the resistive switching phenomenon of these RRAM devices, it was found that significant rectifying characteristics were exhibited in a highresistance state (HRS). This phenomenon can be explained by regulation of the Schottky barrier of the interface between the top electrode and the resistive layer, which can be influenced by the migration of oxygen vacancies.


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