Observation of indium ion migration-induced resistive switching in Al/Mg0.5Ca0.5TiO3/ITO

2016 ◽  
Vol 109 (5) ◽  
pp. 053507 ◽  
Author(s):  
Zong-Han Lin ◽  
Yeong-Her Wang
Keyword(s):  
Resistive Switching ◽  
Ion Migration ◽  
Indium Ion

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study

2012 ◽  
Vol 59 (9) ◽  
pp. 2461-2467 ◽  
Author(s):  
Federico Nardi ◽  
Stefano Larentis ◽  
Simone Balatti ◽  
David C. Gilmer ◽  
Daniele Ielmini
Keyword(s):  
Experimental Study ◽  
Resistive Switching ◽  
Ion Migration

Investigation of the Resistive Switching Mechanisms and Rectification Characteristics of HfO2-Based Resistive Random Access Memory Devices with Different Electrode Materials

2020 ◽  
Vol 20 (10) ◽  
pp. 6489-6494
Author(s):  
Batkhuyag Khorolsuren ◽  
Shenmin Lu ◽  
Chao Sun ◽  
Fang Jin ◽  
Wenqin Mo ◽  
...  
Keyword(s):  
Noble Metal ◽  
Resistive Switching ◽  
Electrode Materials ◽  
Metal Electrode ◽  
Ion Migration ◽  
Resistive Layer ◽  
Switching Mechanism ◽  
Oxygen Ion ◽  
Oxygen Ion Migration ◽  
Resistive Switching Mechanism

To study the substitutability of noble metal electrodes in memristors, the effect of Pt/HfO2/Ti structure on the replacement of noble metal electrode Pt by different electrodes was studied. Compared with the unsubstituted devices, the HfO2-based RRAM devices with TiN and TiOxNy electrodes devices showed good resistive switching performance and resistive switching mechanism under oxygen ion migration. Five devices were prepared, and their resistive switching mechanism under oxygen ion migration was investigated. Moreover, besides the resistive switching phenomenon of these RRAM devices, it was found that significant rectifying characteristics were exhibited in a highresistance state (HRS). This phenomenon can be explained by regulation of the Schottky barrier of the interface between the top electrode and the resistive layer, which can be influenced by the migration of oxygen vacancies.

scholarly journals Resistive Switching in Ge0.3Se0.7Films by Means of Copper Ion Migration

2007 ◽  
Vol 221 (11-12) ◽  
pp. 1469-1478 ◽  
Author(s):  
C. Schindler ◽  
X. Guo ◽  
A. Besmehn ◽  
R. Waser
Keyword(s):  
Resistive Switching ◽  
Copper Ion ◽  
Ion Migration

A resistive device with electrolyte as active electrode

2020 ◽  
Vol 34 (28) ◽  
pp. 2050267
Author(s):  
Tian Kang ◽  
Xiaoyu Chen ◽  
Jia Zhu ◽  
Yun Huang ◽  
Zhuojie Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Oxide Semiconductor ◽  
Access Memory ◽  
Conductive Filament ◽  
Active Electrode ◽  
Ion Migration ◽  
Resistance Random Access Memory ◽  
Switching Characteristics

Due to the outstanding performance of resistance random access memory (RRAM) in the memory field, the study of resistive switching (RS) phenomena has become extremely noticeable in the recent years. The mechanism of metal conductive filamentary RRAM is already clear, but the conditions of the RS are still unclear. Therefore, this paper aims to explore the conditions for the occurrence of resistive, using a new RS structure called Electrolyte-Oxide-Semiconductor (EOS). This structure is based on the formation of metal conductive filament and exhibits the unipolar switching characteristics. Due to the formation or rupture of the conductive filaments, this device exhibits different resistance states. A series model of electrolyte and conductive filaments is used to explain the IV curve of this device. Compared with the device using a metal active electrode, the active electrode of this device is originally ionized. Therefore, it would be a better tool to explore the mechanism of ion migration and the formation of conductive filaments. Materials screening of metal in RRAM would also be more efficient.

scholarly journals Электрофизические характеристики многослойных мемристивных наноструктур на основе стабилизированного иттрием диоксида циркония и оксида тантала

2020 ◽  
Vol 90 (2) ◽  
pp. 298
Author(s):  
С.В. Тихов ◽  
А.И. Белов ◽  
Д.С. Королев ◽  
И.Н. Антонов ◽  
А.А. Сушков ◽  
...  
Keyword(s):  
Activation Energy ◽  
Electric Field ◽  
Resistive Switching ◽  
Layer Structure ◽  
Ion Migration ◽  
Carrier Trapping ◽  
Migration Polarization ◽  
Self Assembled

The electrophysical characteristics of multilayer memristive structure Au/Ta/ZrO2(Y)/TaOx/TiN have been studied. The effects of electron and ion electrification associated with carrier trapping on traps and ion migration polarization in a dielectric are found. The effect of traps located in dielectrics on the effects of electroforming and resistive switching is established. The values of activation energy and concentrations for traps and ions are determined. The phenomenon of stabilization of resistive switching, which is associated with the features of the two-layer structure of YSZ/TaOx and self-assembled Ta nanoclusters, is found. Nanoclusters play the role of electric field concentrators in the process of electroforming and subsequent resistive switching.

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