High resolution 3D laser interferometer with reduced linearity error

1996 ◽  
Author(s):  
Bernhard Hils
Keyword(s):  
High Resolution ◽  
Laser Interferometer ◽  
Linearity Error

Creep rate spectroscopy using a laser interferometer as ultra-high resolution technique for study of relaxations

1997 ◽  
Vol 119 (1) ◽  
pp. 79-87 ◽  
Author(s):  
Nina N. Peschanskaya ◽  
Pavel N. Yakushev ◽  
Alfred B. Sinani ◽  
Vladimir A. Bershtein
Keyword(s):  
High Resolution ◽  
Creep Rate ◽  
Laser Interferometer ◽  
High Resolution Technique

Detection and active stabilization of beams position at a high-resolution laser interferometer

2008 ◽  
Author(s):  
Ondřej Číp ◽  
Zdeněk Buchta ◽  
Martin Čížek ◽  
Radek Šmíd ◽  
Josef Lazar
Keyword(s):  
High Resolution ◽  
Laser Interferometer ◽  
Active Stabilization

Laser interferometer with a high-resolution optical microscope for measuring small line scales

1997 ◽  
Vol 40 (9) ◽  
pp. 852-855
Author(s):  
L. Yu. Abramova ◽  
V. M. Baratov ◽  
V. L. Fedorin ◽  
L. F. Khavinson
Keyword(s):  
High Resolution ◽  
Laser Interferometer ◽  
Optical Microscope

Towards Perfection in Large Area, High-Resolution SEM for Integrated Circuit Reverse Engineering

2016 ◽  
Author(s):  
J.R. Fridmann ◽  
J.E. Sanabia ◽  
M. Rasche
Keyword(s):  
High Resolution ◽  
Integrated Circuits ◽  
Reverse Engineering ◽  
Integrated Circuit ◽  
Laser Interferometer ◽  
Image Data ◽  
Large Area ◽  
Image Capture ◽  
Sem Imaging ◽  
Stitching Errors

Abstract For large area, high resolution SEM imaging applications, such as integrated circuit (IC) reverse engineering and connectomics [1-3], SEM instruments are limited by small, uncalibrated fields of view (FOVs) and imprecise sample positioning. These limitations affect image capture throughput, requiring more stage drive time and larger image overlaps. Furthermore, these instrument limitations introduce stitching errors in 4 dimensions of the image data, X, Y, Z and I (signal intensity). Throughput and stitching errors are cited challenges [2] and software alone cannot tenably correct stitching errors in large image datasets [3]. Furthermore, software corrections can introduce additional errors into the image data via the scaling, rotation, and twisting of the images. So software has proven insufficient for reverse engineering of modern integrated circuits. Our methodology addresses the challenges brought on by small, uncalibrated FOVs and imprecise sample positioning by combining the resolution and flexibility of the SEM instrument with the accuracy (of the order 10 nm), stability, and automation of the electron beam lithography (EBL) instrument. With its unique combination of high resolution SEM imaging (up to 50,000 pixels x 50,000 pixels for each image), laser interferometer stage positioning, and FOV mapping, the reverse engineering scanning electron microscope (RE-SEM) produces the most accurate large area, high resolution images directly acquired by an SEM instrument [4]. Since the absolute position of each pixel is known ultimately to the accuracy afforded by the laser interferometer stage, these images can be stacked (3D-stitched) with the highest possible accuracy. Thus, the RE-SEM has been used to successfully reconstruct a current PC-CPU at the 22 nm node.

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