Characterization of 100 GHz GaAs/alGaAs multiquantum well avalanche transit time devices

2017 ◽  
Author(s):  
C. C. Meng
Keyword(s):  
Transit Time ◽  
Multiquantum Well

LPE growth and characterization of InGaAsP/InP multiquantum well epitaxial layers

1986 ◽  
Vol 78 (3) ◽  
pp. 461-467 ◽  
Author(s):  
Yoichi Sasai ◽  
Mototsugu Ogura ◽  
Takao Kajiwara
Keyword(s):  
Epitaxial Layers ◽  
Multiquantum Well

Characterization of the acute pulse transit time response to obstructive apneas and hypopneas in preschool children with sleep-disordered breathing

2013 ◽  
Vol 14 (11) ◽  
pp. 1123-1131 ◽  
Author(s):  
Lauren C. Nisbet ◽  
Stephanie R. Yiallourou ◽  
Gillian M. Nixon ◽  
Sarah N. Biggs ◽  
Margot J. Davey ◽  
...  
Keyword(s):  
Preschool Children ◽  
Transit Time ◽  
Sleep Disordered Breathing ◽  
Pulse Transit Time ◽  
Time Response ◽  
Disordered Breathing

Fabrication and characterization of AlGaAs/GaAs multiquantum well ring lasers

2006 ◽  
Author(s):  
Binglin Miao ◽  
Shouyuan Shi ◽  
Janusz Murakowski ◽  
Caihua Chen ◽  
Dennis W. Prather
Keyword(s):  
Ring Lasers ◽  
Fabrication And Characterization ◽  
Multiquantum Well

Modeling of optical spectra for characterization of multiquantum well InGaAsP-based lasers

1996 ◽  
Author(s):  
Mark S. Hybertsen ◽  
Gene A. Baraff ◽  
Sharon K. Sputz ◽  
David A. Ackerman ◽  
Gleb E. Shtengel ◽  
...  
Keyword(s):  
Optical Spectra ◽  
Multiquantum Well

Characterization of zinc diffusion induced disordering in GaAs/AlGaAs multiquantum well structures by Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 734-735
Author(s):  
B. Bourqui ◽  
P. A. Buffat ◽  
J.D. Ganière ◽  
F. K. Reinhart
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Multilayered Structures ◽  
Transmission Electron ◽  
Zinc Diffusion ◽  
Secondary Ion ◽  
Diffusion Of Impurities ◽  
Multiquantum Well

Diffusion of impurities, such as zinc or silicon, enhances the intermixing of Ga-Al atoms at GaAs/AlGaAs interfaces. This process is useful to modify the bandedge properties of multilayered structures such as (AlxGa1-xAs/GaAs). Important technological applications are due to this effect. Information about electronic states of the disordered structure is directly obtained by photoluminescence. The impurity induced disordering depth is, usually, estimated either by scanning electron microscopy (SEM) or by secondary ion mass spectroscopy (SIMS). We used transmission electron microscopy on wedge shaped specimen (WTEM) is used to obtain local information on the disordering depth and to check the chemical homogeneities of the diffused samples.The multiquantum well structures (MQW) were grown by molecular beam epitaxy (MBE) on n doped [001] substrate at surface temperature of 600 °C. A specimen structure is given in Figure 1. Zinc diffusions were performed by using the sealed quartz tube method at 575°C. The ZnAs2 source provide sufficient partial pressure of arsine to maintain the surface at equilibrium.

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