Modeling of optical spectra for characterization of multiquantum well InGaAsP-based lasers

1996 ◽  
Author(s):  
Mark S. Hybertsen ◽  
Gene A. Baraff ◽  
Sharon K. Sputz ◽  
David A. Ackerman ◽  
Gleb E. Shtengel ◽  
...  
Keyword(s):  
Optical Spectra ◽  
Multiquantum Well

scholarly journals Characterization of M dwarfs using optical mid-resolution spectra for exploration of small exoplanets

2020 ◽  
Author(s):  
Yohei Koizumi ◽  
Masayuki Kuzuhara ◽  
Masashi Omiya ◽  
Teruyuki Hirano ◽  
John Wisniewski ◽  
...  
Keyword(s):  
Sample Selection ◽  
Optical Spectra ◽  
Average Error ◽  
Spectral Energy ◽  
M Dwarfs ◽  
Energy Distributions ◽  
Fitting Procedures ◽  
Optical Region ◽  
Selection For

Abstract We present the optical spectra of 338 nearby M dwarfs, and compute their spectral types, effective temperatures (Teff), and radii. Our spectra were obtained using several optical spectrometers with spectral resolutions that range from 1200 to 10000. As many as 97% of the observed M-type dwarfs have a spectral type of M3–M6, with a typical error of 0.4 subtype, among which the spectral types M4–M5 are the most common. We infer the Teff of our sample by fitting our spectra with theoretical spectra from the PHOENIX model. Our inferred Teff is calibrated with the optical spectra of M dwarfs whose Teff have been well determined with the calibrations that are supported by previous interferometric observations. Our fitting procedures utilize the VO absorption band (7320–7570 Å) and the optical region (5000–8000 Å), yielding typical errors of 128 K (VO band) and 85 K (optical region). We also determine the radii of our sample from their spectral energy distributions. We find most of our sample stars have radii of <0.6 R⊙, with the average error being 3%. Our catalog enables efficient sample selection for exoplanet surveys around nearby M-type dwarfs.

Fourier analysis of optical spectra for characterization of regimes in passively mode-locked fiber lasers

2020 ◽  
Author(s):  
Héctor G. Santiago-Hernández ◽  
David I. Serrano-García ◽  
Olivier Pottiez ◽  
Baldemar Ibarra-Escamilla ◽  
Jorge L. Flores Nuñez ◽  
...  
Keyword(s):  
Fourier Analysis ◽  
Fiber Lasers ◽  
Optical Spectra

LPE growth and characterization of InGaAsP/InP multiquantum well epitaxial layers

1986 ◽  
Vol 78 (3) ◽  
pp. 461-467 ◽  
Author(s):  
Yoichi Sasai ◽  
Mototsugu Ogura ◽  
Takao Kajiwara
Keyword(s):  
Epitaxial Layers ◽  
Multiquantum Well

Fabrication and characterization of AlGaAs/GaAs multiquantum well ring lasers

2006 ◽  
Author(s):  
Binglin Miao ◽  
Shouyuan Shi ◽  
Janusz Murakowski ◽  
Caihua Chen ◽  
Dennis W. Prather
Keyword(s):  
Ring Lasers ◽  
Fabrication And Characterization ◽  
Multiquantum Well

Characterization of zinc diffusion induced disordering in GaAs/AlGaAs multiquantum well structures by Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 734-735
Author(s):  
B. Bourqui ◽  
P. A. Buffat ◽  
J.D. Ganière ◽  
F. K. Reinhart
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Multilayered Structures ◽  
Transmission Electron ◽  
Zinc Diffusion ◽  
Secondary Ion ◽  
Diffusion Of Impurities ◽  
Multiquantum Well

Diffusion of impurities, such as zinc or silicon, enhances the intermixing of Ga-Al atoms at GaAs/AlGaAs interfaces. This process is useful to modify the bandedge properties of multilayered structures such as (AlxGa1-xAs/GaAs). Important technological applications are due to this effect. Information about electronic states of the disordered structure is directly obtained by photoluminescence. The impurity induced disordering depth is, usually, estimated either by scanning electron microscopy (SEM) or by secondary ion mass spectroscopy (SIMS). We used transmission electron microscopy on wedge shaped specimen (WTEM) is used to obtain local information on the disordering depth and to check the chemical homogeneities of the diffused samples.The multiquantum well structures (MQW) were grown by molecular beam epitaxy (MBE) on n doped [001] substrate at surface temperature of 600 °C. A specimen structure is given in Figure 1. Zinc diffusions were performed by using the sealed quartz tube method at 575°C. The ZnAs2 source provide sufficient partial pressure of arsine to maintain the surface at equilibrium.

Characterization of Carbon Nanotubes by optical spectra

2003 ◽  
Vol 135-136 ◽  
pp. 761-762 ◽  
Author(s):  
M. Kaempgen ◽  
U. Dettlaff ◽  
S. Roth
Keyword(s):  
Carbon Nanotubes ◽  
Optical Spectra

Structural characterization of AlGaAs/GaAs multiquantum-well structures grown on silicon

1990 ◽  
Vol 184 (1-2) ◽  
pp. 429-436
Author(s):  
B. Bartenlian ◽  
R. Bisaro ◽  
J.-P. Hirtz ◽  
M.-N. Charasse ◽  
J. Chazelas ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Multiquantum Well
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