A holistic metrology sensitivity study for pattern roughness quantification on EUV patterned device structures with mask design induced roughness

2018 ◽  
Author(s):  
Kurt Ronse ◽  
Bogumila Kutrzeba-Kotowska ◽  
Gaoliang Dai ◽  
Frank Scholze ◽  
Igor Turovets ◽  
...  
Keyword(s):  
Sensitivity Study ◽  
Mask Design ◽  
Device Structures

A technique to prepare cross-sectional TEM specimens of semiconducting devices

1986 ◽  
Vol 44 ◽  
pp. 742-743
Author(s):  
A. K. Rai ◽  
P. P. Pronko
Keyword(s):  
Thin Films ◽  
Surface Region ◽  
Sample Surface ◽  
Specific Region ◽  
Cross Sectional ◽  
Thin Sections ◽  
The Past ◽  
Device Structures ◽  
Ion Implanted

Several techniques have been reported in the past to prepare cross(x)-sectional TEM specimen. These methods are applicable when the sample surface is uniform. Examples of samples having uniform surfaces are ion implanted samples, thin films deposited on substrates and epilayers grown on substrates. Once device structures are fabricated on the surfaces of appropriate materials these surfaces will no longer remain uniform. For samples with uniform surfaces it does not matter which part of the surface region remains in the thin sections of the x-sectional TEM specimen since it is similar everywhere. However, in order to study a specific region of a device employing x-sectional TEM, one has to make sure that the desired region is thinned. In the present work a simple way to obtain thin sections of desired device region is described.

Behavior of contact-silicided TFSOI gate structures

1994 ◽  
Vol 52 ◽  
pp. 860-861
Author(s):  
N. David Theodore ◽  
Juergen Foerstner ◽  
Peter Fejes
Keyword(s):  
Semiconductor Device ◽  
Series Resistance ◽  
Field Effect Transistors ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
Continuous Layer ◽  
Buried Oxide ◽  
Device Structures ◽  
Thin Silicon

As semiconductor device dimensions shrink and packing-densities rise, issues of parasitic capacitance and circuit speed become increasingly important. The use of thin-film silicon-on-insulator (TFSOI) substrates for device fabrication is being explored in order to increase switching speeds. One version of TFSOI being explored for device fabrication is SIMOX (Silicon-separation by Implanted OXygen).A buried oxide layer is created by highdose oxygen implantation into silicon wafers followed by annealing to cause coalescence of oxide regions into a continuous layer. A thin silicon layer remains above the buried oxide (~220 nm Si after additional thinning). Device structures can now be fabricated upon this thin silicon layer.Current fabrication of metal-oxidesemiconductor field-effect transistors (MOSFETs) requires formation of a polysilicon/oxide gate between source and drain regions. Contact to the source/drain and gate regions is typically made by use of TiSi2 layers followedby Al(Cu) metal lines. TiSi2 has a relatively low contact resistance and reduces the series resistance of both source/drain as well as gate regions

Defect morphology in thick relaxed layers of InGaAs on GaAs

1990 ◽  
Vol 48 (4) ◽  
pp. 668-669
Author(s):  
R H Dixon ◽  
P Kidd ◽  
P J Goodhew
Keyword(s):  
Electron Microscopy ◽  
Surface Morphology ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Strained Layers ◽  
Good Surface ◽  
Transmission Electron ◽  
Device Structures ◽  
Surface Morphologies

Thick relaxed InGaAs layers grown epitaxially on GaAs are potentially useful substrates for growing high indium percentage strained layers. It is important that these relaxed layers are defect free and have a good surface morphology for the subsequent growth of device structures.3μm relaxed layers of InxGa1-xAs were grown on semi - insulating GaAs substrates by Molecular Beam Epitaxy (MBE), where the indium composition ranged from x=0.1 to 1.0. The interface, bulk and surface of the layers have been examined in planar view and cross-section by Transmission Electron Microscopy (TEM). The surface morphologies have been characterised by Scanning Electron Microscopy (SEM), and the bulk lattice perfection of the layers assessed using Double Crystal X-ray Diffraction (DCXRD).The surface morphology has been found to correlate with the growth conditions, with the type of defects grown-in to the layer (e.g. stacking faults, microtwins), and with the nature and density of dislocations in the interface.

Race Difference in Auditory Sensitivity

1964 ◽  
Vol 7 (4) ◽  
pp. 389-393 ◽  
Author(s):  
David C. Shepherd ◽  
Robert Goldstein ◽  
Benjamin Rosenblüt
Keyword(s):  
White Women ◽  
White Men ◽  
Sensitivity Study ◽  
Auditory Sensitivity ◽  
Race Difference ◽  
Men And Women ◽  
Auditory Thresholds ◽  
Békésy Audiometry ◽  
Method Of Adjustment ◽  
Better Than

Two separate studies investigated race and sex differences in normal auditory sensitivity. Study I measured thresholds at 500, 1000, and 2000 cps of 23 white men, 26 white women, 21 negro men, and 24 negro women using the method of limits. In Study II thresholds of 10 white men, 10 white women, 10 negro men, and 10 negro women were measured at 1000 cps using four different stimulus conditions and the method of adjustment by means of Bekesy audiometry. Results indicated that the white men and women in Study I heard significantly better than their negro counterparts at 1000 and 2000 cps. There were no significant differences between the average thresholds measured at 1000 cps of the white and negro men in Study II. White women produced better auditory thresholds with three stimulus conditions and significantly more sensitive thresholds with the slow pulsed stimulus than did the negro women in Study II.

ELECTRON BEAM SOURCE MOLECULAR BEAM EPITAXY OF AlxGa1-xAs GRADED BAND GAP DEVICE STRUCTURES

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-607-C4-614
Author(s):  
R. J. MALIK ◽  
A. F.J. LEVI ◽  
B. F. LEVINE ◽  
R. C. MILLER ◽  
D. V. LANG ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Beam Source ◽  
Device Structures ◽  
Graded Band Gap

A Sensitivity Study on Low Salinity Waterflooding

2017 ◽  
Vol 04 (03) ◽  
pp. 231-236 ◽  
Author(s):  
Barham S. Mahmood ◽  
Jagar Ali ◽  
Shirzad B. Nazhat ◽  
David Devlin
Keyword(s):  
Sensitivity Study ◽  
Low Salinity ◽  
Low Salinity Waterflooding

Sensitivity study of precision pressurized membrane reflector deformations

AIAA Journal ◽  
2001 ◽  
Vol 39 ◽  
pp. 308-314
Author(s):  
G. Greschik ◽  
M. Mikulas ◽  
A. Palisoc ◽  
C. Cassapakis ◽  
G. Veal
Keyword(s):  
Sensitivity Study

Sensitivity Study and Primary Boom Carpet Assessment for Conceptual Low Boom Supersonic Transport

2021 ◽  
Author(s):  
Hiroaki Ishikawa ◽  
Atsushi Ueno ◽  
Shinya Koganezawa ◽  
Yoshikazu Makino ◽  
Bernd Liebhardt ◽  
...  
Keyword(s):  
Sensitivity Study ◽  
Supersonic Transport

Automated Diagonal Slice and View Solution for 3D Device Structure Analysis

2018 ◽  
Author(s):  
Sang Hoon Lee ◽  
Jeff Blackwood ◽  
Stacey Stone ◽  
Michael Schmidt ◽  
Mark Williamson ◽  
...  
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Image Data ◽  
Planar Surface ◽  
Device Structure ◽  
Cross Sectional ◽  
Device Structures ◽  
The Cross ◽  
Planar Analysis

Abstract The cross-sectional and planar analysis of current generation 3D device structures can be analyzed using a single Focused Ion Beam (FIB) mill. This is achieved using a diagonal milling technique that exposes a multilayer planar surface as well as the cross-section. this provides image data allowing for an efficient method to monitor the fabrication process and find device design errors. This process saves tremendous sample-to-data time, decreasing it from days to hours while still providing precise defect and structure data.

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