Leakage currents and Fermi-level shifts in C- and Fe-doped GaN (Conference Presentation)

2018 ◽  
Author(s):  
Aqdas Fariza ◽  
Andreas Lesnik ◽  
Silvio Neugebauer ◽  
Matthias Wieneke ◽  
Jonas Hennig ◽  
...  
Keyword(s):  
Fermi Level ◽  
Leakage Currents ◽  
Level Shifts

Leakage currents and Fermi-level shifts in GaN layers upon iron and carbon-doping

2017 ◽  
Vol 122 (2) ◽  
pp. 025704 ◽  
Author(s):  
A. Fariza ◽  
A. Lesnik ◽  
S. Neugebauer ◽  
M. Wieneke ◽  
J. Hennig ◽  
...  
Keyword(s):  
Fermi Level ◽  
Carbon Doping ◽  
Leakage Currents ◽  
Level Shifts

Defect states in amorphous Ge2Sb2Te5 phase change material

2014 ◽  
Vol 92 (7/8) ◽  
pp. 619-622
Author(s):  
N. Qamhieh ◽  
S.T. Mahmoud ◽  
A.I. Ayesh
Keyword(s):  
Fermi Level ◽  
Energy Gap ◽  
Continuous Distribution ◽  
Dark Conductivity ◽  
Localized States ◽  
Defect States ◽  
Thermally Activated ◽  
Level Shifts ◽  
Gap States ◽  
Change Material

Steady-state photoconductivity measurements in the temperature range 100–300 K on amorphous Ge2Sb2Te5 thin film prepared by dc sputtering are analyzed. The dark conductivity is thermally activated with a single activation energy that allocates the position of the Fermi level approximately in the middle of the energy gap relative to the valance band edge. The temperature dependence of the photoconductivity ensures the presence of a maximum normally observed in chalcogenides with low- and high-temperature slopes, which predict the location of discrete sets of localized states (recombination levels) in the gap. The presence of these defect states close to the valence and conduction band edges leaves the quasi Fermi level shifts in a continuous distribution of gap states at high temperatures, as evidenced from the γ values of the lux–ampere characteristics.

scholarly journals Nickel doping of boron–carbon alloy films and corresponding Fermi level shifts

1997 ◽  
Vol 15 (3) ◽  
pp. 854-859 ◽  
Author(s):  
Seong-Don Hwang ◽  
N. Remmes ◽  
P. A. Dowben ◽  
D. N. McIlroy
Keyword(s):  
Fermi Level ◽  
Nickel Doping ◽  
Alloy Films ◽  
Level Shifts ◽  
Boron Carbon

First-Principle Study of the Electronic and Optical Properties of Ti Doped ZnS

2012 ◽  
Vol 430-432 ◽  
pp. 173-176 ◽  
Author(s):  
Chang Peng Chen ◽  
Jian Xiong Xie ◽  
Jia Fu Wang
Keyword(s):  
Optical Properties ◽  
Fermi Level ◽  
Conduction Band ◽  
Electronic Structures ◽  
Density Functional ◽  
Band Gaps ◽  
First Principle ◽  
Level Shifts ◽  
Calculation Results ◽  
Impurity Elements

Based on the density functional pseudopotential method, the electronic structures and the optical properties for Ti doped ZnS are investigated in detail. The calculation results indicate that the doping of Ti widens the band gap of ZnS and the Fermi level shifts upward into the conduction band. The impurity elements form new highly localized impurity energy level at the bottom of the conduction band near the Fermi level.,.Meanwhile, blue shifts are revealed in both the imaginary part of dielectric function and the absorption spectra corresponding to the change of band gaps.

The Influence of Interfaces on the Gap State Distribution of Undoped a-Si:H

1990 ◽  
Vol 192 ◽  
Author(s):  
G. Schumm ◽  
G. H. Bauer
Keyword(s):  
Fermi Level ◽  
Transit Time ◽  
Reverse Bias ◽  
State Distribution ◽  
Band Bending ◽  
Time Regime ◽  
Level Shifts ◽  
Pool Model ◽  
Annealing Effects ◽  
Gap State

ABSTRACTModulated primary photocurrent (MPC) studies on pin structures show spatial variations of the gap state distribution across the i-layer that can be correlated with Fermi level shifts by band bending towards interfaces. These results as well as reverse bias annealing effects are explained in terms of the defect pool model. It is demonstrated that MPC measurements are basically identical to TOF measurements with clear advantages in the post-transit time regime.

Photoreflectance Characterization of Etch-Induced Damage in Dry Etched GaAs

1993 ◽  
Vol 324 ◽  
Author(s):  
O.J. Glembocki ◽  
J.A. Tuchman ◽  
K.K. Ko ◽  
S.W. Pang ◽  
A. Giordana ◽  
...  
Keyword(s):  
Fermi Level ◽  
Valence Band ◽  
Microwave Power ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Rf Power ◽  
Level Shifts ◽  
Ecr Source

AbstractPhotoreflectance has been used to characterize the etch-induced damage in GaAs processed in an Ar/Cl2 plasma generated by an electron-cyclotron resonance (ECR) source. We show that the damage is localized to the surface and that it is most influenced by the RF power, with little effect from the microwave power. The Fermi-level is observed to be unchanged in n-GaAs and remains near midgap, while for p-GaAs, the Fermi level shifts from near the valence band to midgap. Etch-induced anisite defects are proposed as a possible source of the damage.

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