Control method conductive properties ZnS quantum dots

We present a scheme to generate steady-state quantum correlations in quantum dots. The shape of the control field is obtained by using the Lyapunov control method, and the controlled state is found to approach the target state monotonically. We also explore the possibility of replacing the continuous control field with a train of discreet rectangular pulses, which is much easier to implement experimentally. The discretized control field is found to be still able to drive the initial state to the target state with very small errors, which suggests that the Lyapunov based control is still effective under practical limitations.

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Biodegradable blends of graphene quantum dots and thermoplastic starch with solid-state photoluminescent and conductive properties

International Journal of Biological Macromolecules ◽

10.1016/j.ijbiomac.2019.07.211 ◽

2019 ◽

Vol 139 ◽

pp. 367-376 ◽

Cited By ~ 5

Author(s):

Jie Chen ◽

Zhu Long ◽

Shuangfei Wang ◽

Yahui Meng ◽

Guoliang Zhang ◽

...

Keyword(s):

Quantum Dots ◽

Solid State ◽

Graphene Quantum Dots ◽

Thermoplastic Starch ◽

Conductive Properties ◽

Biodegradable Blends

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Synthesis and characterization of antimony-doped n-type silicon quantum dots

International Journal of Modern Physics B ◽

10.1142/s0217979217501107 ◽

2017 ◽

Vol 31 (14) ◽

pp. 1750110 ◽

Cited By ~ 1

Author(s):

Xiaobo Chen ◽

Peizhi Yang

Keyword(s):

Quantum Dots ◽

Nonradiative Recombination ◽

Electrical Behavior ◽

Si Substrate ◽

Text Type ◽

Sb Doping ◽

Type C ◽

Conductive Properties ◽

Si Quantum Dots

Growth of Sb/SiN[Formula: see text] multilayers, followed by high-temperature annealing, was shown to be an effective strategy for synthesizing Sb-doped Si quantum dots (Si-QDs). The doping concentration of Sb (from 0.32 at.% to 1.82 at.%) was controlled by varying the thickness of Sb sublayer. Moderate Sb concentrations were found to enhance the formation of Si-QDs. Photoluminescence (PL) results show that the nonradiative recombination defects caused by Sb impurities increased with the increase of Sb content, which leads to the decrease of the emission intensity. Hall measurements demonstrate that as the carrier concentration increases, the mobility of Hall decreases, and the conductivity increases at first and then decreases with the increase of Sb content. It is indicated that the excessive high Sb doping will deteriorate the conductive properties. The observed [Formula: see text]-type electrical behavior and great enhancement increase in conductivity of the Sb-doped Si-QDs film suggest an effective Sb doping. A [Formula: see text]–[Formula: see text] junction was formed between Sb-doped Si-QDs and a [Formula: see text]-type c-Si substrate, exhibiting good rectifying properties.

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Nanostructure of semiconductor quantum dots in a borosilicate glass matrix by complementary use of HREM and AEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100176770 ◽

1990 ◽

Vol 48 (4) ◽

pp. 728-729

Author(s):

M.J. Kim ◽

L.C. Liu ◽

S.H. Risbud ◽

R.W. Carpenter

Keyword(s):

Quantum Dots ◽

Borosilicate Glass ◽

Glass Matrix ◽

Optical Switching ◽

Response Times ◽

Fast Response ◽

Processing Technique ◽

Internal Stresses ◽

Electron Hole ◽

Spatial Dimensions

When the size of a semiconductor is reduced by an appropriate materials processing technique to a dimension less than about twice the radius of an exciton in the bulk crystal, the band like structure of the semiconductor gives way to discrete molecular orbital electronic states. Clusters of semiconductors in a size regime lower than 2R {where R is the exciton Bohr radius; e.g. 3 nm for CdS and 7.3 nm for CdTe) are called Quantum Dots (QD) because they confine optically excited electron- hole pairs (excitons) in all three spatial dimensions. Structures based on QD are of great interest because of fast response times and non-linearity in optical switching applications.In this paper we report the first HREM analysis of the size and structure of CdTe and CdS QD formed by precipitation from a modified borosilicate glass matrix. The glass melts were quenched by pouring on brass plates, and then annealed to relieve internal stresses. QD precipitate particles were formed during subsequent "striking" heat treatments above the glass crystallization temperature, which was determined by differential thermal analysis.

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