Rapid silicon carbide micro-crystal growth by high power CO2 laser

2017 ◽  
Author(s):  
Shizhuo Yin ◽  
Haonan Zhou ◽  
Chang-Jiang Chen ◽  
Wenbin Zhu ◽  
Ju-Hung Chao
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Co2 Laser ◽  
High Power

Silicon carbide high-power devices

1996 ◽  
Vol 43 (10) ◽  
pp. 1732-1741 ◽  
Author(s):  
C.E. Weitzel ◽  
J.W. Palmour ◽  
C.H. Carter ◽  
K. Moore ◽  
K.K. Nordquist ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Power ◽  
Power Devices

Physical Properties of SiC

MRS Bulletin ◽  
1997 ◽  
Vol 22 (3) ◽  
pp. 25-29 ◽  
Author(s):  
W.J. Choyke ◽  
G. Pensl
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Physical Properties ◽  
Chemical Bond ◽  
High Power ◽  
National Program ◽  
High Radiation ◽  
Electrical Switching ◽  
Oil Drilling ◽  
Drilling Technology

While silicon carbide has been an industrial product for over a century, it is only now emerging as the semiconductor of choice for high-power, high-temperature, and high-radiation environments. From electrical switching and sensors for oil drilling technology to all-electric airplanes, SiC is finding a place which is difficult to fill with presently available Si or GaAs technology. In 1824 Jöns Jakob Berzelius published a paper which suggested there might be a chemical bond between the elements carbon and silicon. It is a quirk of history that he was born in 1779 in Linköping, Sweden where he received his early education, and now, 172 years later, Linkoping University is the center of a national program in Sweden to study the properties of SiC as a semiconductor.

scholarly journals Development of Large Surface Hardening Method for Carbon Steel with High Power CO2 Laser (1st Report)

1997 ◽  
Vol 63 (8) ◽  
pp. 1138-1142
Author(s):  
Masashi OIKAWA ◽  
Hiroyuki YAMAMOTO ◽  
Katsuhiro MINAMIDA ◽  
Hiromichi KAWASUMI
Keyword(s):  
Carbon Steel ◽  
Co2 Laser ◽  
High Power ◽  
Surface Hardening

Total Energy Differences Between Silicon Carbide Polytypes and their Implications for Crystal Growth

1997 ◽  
Vol 492 ◽  
Author(s):  
Sukit Llmpijumnong ◽  
Walter R. L. Lambrecht
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Epitaxial Growth ◽  
Size Effects ◽  
Nearest Neighbor ◽  
Orbital Method ◽  
Full Potential ◽  
Neighbor Interaction ◽  
Island Size ◽  
Annni Model

ABSTRACTThe energy differences between various SiC polytypes are calculated using the full-potential linear muffin-tin orbital method and analyzed in terms of the anisotropie next nearest neighbor interaction (ANNNI) model. The fact that J1 + 2J2 < 0 with J1 > 0 implies that twin boundaries in otherwise cubic material are favorable unless twins occur as nearest neighbor layers. Contrary to some other recent calculations we find J1 > |J2|. We discuss the consequences of this for stabilization of cubic SiC in epitaxial growth, including considerations of the island size effects.

scholarly journals Light Emission from Keyhole in High-Power CO2 Laser Welding.

2002 ◽  
Vol 30 (1) ◽  
pp. 38-43 ◽  
Author(s):  
Isamu MIYAMOTO ◽  
Takashi INOUE ◽  
Kazuhiko ONO ◽  
Kaoru ADACHI
Keyword(s):  
Laser Welding ◽  
Co2 Laser ◽  
High Power ◽  
Light Emission
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