Tunable terahertz devices using graphene and metallic heterostructures (Conference Presentation)

Author(s):  
Yang Wu ◽  
Hyunsoo Yang
Keyword(s):  
Author(s):  
Renxia Ning ◽  
Zhiqiang Xiao ◽  
Zhenhai Chen ◽  
Wei Huang

AbstractA multilayer structure of a square ring of graphene with nesting vanadium dioxide (VO2) was investigated in this study. This structure exhibits electromagnetically induced transparency (EIT), which stems from a bright mode coupling with a dark mode. The permittivity values of graphene and VO2 can be modulated via chemical potential and temperature, respectively. The EIT effect can be tuned based on the chemical potential of graphene and temperature of VO2, resulting in a dual-tunable EIT effect. Simulation results confirmed that this dual-tunable EIT phenomenon is insensitive to polarization. These results may have potential applications in terahertz devices, such as slow light devices, switching devices, and sensors.


Author(s):  
Zhipeng Zheng ◽  
Ying Zheng ◽  
Yao Luo ◽  
Zao Yi ◽  
Jianguo Zhang ◽  
...  

Terahertz functional devices have been instrumental in the development of terahertz technology. And the advent of metamaterials has greatly contributed to the advancement of terahertz devices. However, most of today's...


2014 ◽  
Vol 8 (2) ◽  
pp. 33-39 ◽  
Author(s):  
Ioannis Kostakis ◽  
Daryoosh Saeedkia ◽  
Mohamed Missous
Keyword(s):  

Author(s):  
Shuxian Chen ◽  
Junyi Li ◽  
Zicong Guo ◽  
Li Chen ◽  
Kunhua Wen ◽  
...  

Abstract Plasmon-induced transparency (PIT) is theoretically explored with a graphene metamaterial using finite-difference time-domain numerical simulations and coupled-mode-theory theoretical analysis. In this work, the proposed structure is consisted of one rectangular cavity and three strips to generate the PIT phenomenon. The PIT window can be regulated dynamically by adjusting the Fermi level of the graphene. Importantly, the modulation depth of the amplitude can reach 90.4%. The refractive index sensitivity of the PIT window is also investigated, and the simulation result shows that a sensitivity of 1.335 THz/RIU is achieved. Additionally, when the polarization angle of the incident light is changed gradually from 0˚ to 90˚, the performances of the structure are greatly affected. Finally, the proposed structure is particularly enlightening for the design of dynamically tuned terahertz devices.


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