Tailoring organic electrochemical transistors through form factor and materials selection (Conference Presentation)

2017 ◽  
Author(s):  
Jonathan Rivnay
Keyword(s):  
Form Factor ◽  
Materials Selection ◽  
Organic Electrochemical Transistors

Organic Electrochemical Transistors - From Device Models to a Targeted Design of Materials

2021 ◽  
Author(s):  
Pushpa Raj Paudel ◽  
Joshua Tropp ◽  
Vikash Kaphle ◽  
Jason D Azoulay ◽  
Björn Lüssem
Keyword(s):  
Form Factor ◽  
Substrate Material ◽  
Fabrication Technology ◽  
Organic Electrochemical Transistors

Organic electrochemical transistors (OECTs) are highly versatile in terms of their form factor, their fabrication technology, and their freedom in the choice of substrate material. Their ability to transduce ionic...

The effect of temperature on high-resolution TEM image contrast

1995 ◽  
Vol 53 ◽  
pp. 640-641
Author(s):  
T. Geipel ◽  
W. Mader ◽  
P. Pirouz
Keyword(s):  
Form Factor ◽  
Inelastic Scattering ◽  
Accurate Method ◽  
Waller Factor ◽  
Effect Of Temperature ◽  
Specimen Thickness ◽  
Influence Of Temperature ◽  
Debye Waller Factor ◽  
Influence Of Temperature On ◽  
Atomic Form Factor

Temperature affects both elastic and inelastic scattering of electrons in a crystal. The Debye-Waller factor, B, describes the influence of temperature on the elastic scattering of electrons, whereas the imaginary part of the (complex) atomic form factor, fc = fr + ifi, describes the influence of temperature on the inelastic scattering of electrons (i.e. absorption). In HRTEM simulations, two possible ways to include absorption are: (i) an approximate method in which absorption is described by a phenomenological constant, μ, i.e. fi; - μfr, with the real part of the atomic form factor, fr, obtained from Hartree-Fock calculations, (ii) a more accurate method in which the absorptive components, fi of the atomic form factor are explicitly calculated. In this contribution, the inclusion of both the Debye-Waller factor and absorption on HRTEM images of a (Oll)-oriented GaAs crystal are presented (using the EMS software.Fig. 1 shows the the amplitudes and phases of the dominant 111 beams as a function of the specimen thickness, t, for the cases when μ = 0 (i.e. no absorption, solid line) and μ = 0.1 (with absorption, dashed line).

MAGNETIC FORM FACTOR MEASUREMENTS IN CERIUM HEXABORIDE

1982 ◽  
Vol 43 (C7) ◽  
pp. C7-273-C7-278 ◽  
Author(s):  
P. Burlet ◽  
J. X. Boucherle ◽  
J. Rossat-Mignod ◽  
J. W. Cable ◽  
W. C. Koehler ◽  
...  
Keyword(s):  
Form Factor ◽  
Magnetic Form Factor

FORM FACTOR MEASUREMENTS IN CeTe

1982 ◽  
Vol 43 (C7) ◽  
pp. C7-263-C7-271 ◽  
Author(s):  
J. X. Boucherle ◽  
D. Ravot ◽  
J. Schweizer
Keyword(s):  
Form Factor

FORM FACTOR MEASUREMENT IN FERROMAGNETIC COBALT ORTHOVANADATE

1982 ◽  
Vol 43 (C7) ◽  
pp. C7-253-C7-256
Author(s):  
H. Fuess ◽  
R. Müller ◽  
D. Schwabe ◽  
F. Tasset
Keyword(s):  
Form Factor ◽  
Factor Measurement ◽  
Ferromagnetic Cobalt

Use of databases in materials selection

1992 ◽  
Vol 80 (11-12) ◽  
pp. 35-36
Author(s):  
C. Lebreton ◽  
H.P. Lieurade
Keyword(s):  
Materials Selection
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