Organic Electrochemical Transistors - From Device Models to a Targeted Design of Materials

2021 ◽  
Author(s):  
Pushpa Raj Paudel ◽  
Joshua Tropp ◽  
Vikash Kaphle ◽  
Jason D Azoulay ◽  
Björn Lüssem
Keyword(s):  
Form Factor ◽  
Substrate Material ◽  
Fabrication Technology ◽  
Organic Electrochemical Transistors

Organic electrochemical transistors (OECTs) are highly versatile in terms of their form factor, their fabrication technology, and their freedom in the choice of substrate material. Their ability to transduce ionic...

A Multi-layer Technology for Biocompatible Polymer Microsystems with Integrated Fluid and Electrical Functionality

2004 ◽  
Vol 820 ◽  
Author(s):  
Eileen D. Moss ◽  
Arum Han ◽  
A. Bruno Frazier
Keyword(s):  
Flexible Substrate ◽  
Substrate Material ◽  
Fabrication Technology ◽  
Biocompatible Polymer ◽  
Adhesive Layers ◽  
Cellular Analysis ◽  
Aspect Ratios ◽  
Cell Positioning ◽  
Analysis System ◽  
High Temperature Operation

AbstractA method to fabricate biocompatible polymer microfluidic systems with integrated electrical and fluid functionality has been established. The process flow utilizes laser ablation, microstenciling, and heat staking as the techniques to realize multi-layered polyimide based microsystems with microchannels, thru and embedded fluid / electrical vias, and metallic electrodes and contact pads. As an application of the fabrication technology, a six layer multi-functional cellular analysis system has been demonstrated. The electrophysiological analysis system contains fluid microchannel / via networks for cell positioning and chemical delivery as well as electrical detectors and electrodes for impedance spectroscopy and patch clamping studies. Multiple layers of 50.8µm thick Kapton® sheets with double-sided polyimide adhesive layers were used as the primary material-of-construction. Microchannels with widths of 400µm as well as thru hole vias with 3.71µm diameters (aspect ratios of over 12:1) were laser ablated through the polyimide sheets using an excimer laser and a CO2 laser. Electrical traces and contact pads with features down to 20µm were defined on the flexible polyimide sheets using microstenciling. The patterned layers were bonded using heat staking at a temperature of 350°C, a pressure of 1.65MPa for 60 minutes. This multi-layer technology can be used to create microfluidic devices for many application areas requiring biocompatibility, relatively high temperature operation, or a flexible substrate material.

scholarly journals Efficiency in Bandwidth by using Meander Line Antennas Simulation

2019 ◽  
Vol 9 (2) ◽  
pp. 3801-3804
Keyword(s):  
Low Cost ◽  
Ground Plane ◽  
Low Frequency ◽  
Substrate Material ◽  
Fabrication Technology ◽  
Double Structure ◽  
Simulation Performance ◽  
Monopole Antennas ◽  
Different Types ◽  
Meander Line

In communication technology antennas plays a major role and now a days it has tremendous demand we do have different types of antennas for efficient transmissions discuss about a monopole antenna which is printed of meander line that is used for very low frequency operations of about 900 MHz With partially defected ground plane is backed with E-shaped meander line antennas of double structure is obtained by numerous slots evaluation which is the novelty of this design. By using this monopole antennas fabrication we can reduce the size of antenna and can have less operating frequency which is drastically reduced by these slots and meander lines. By this proposed design we can achieve 70% of reduction in size of antenna as conventional antennas compared. The size is of 42.2mm× 70 mm or 0.12λ0 × 0.2λ0 is obtained to antenna which is very reduced by this model. For having simulation performance valid we use FR4 substrate material for fabrication of antenna and is low cost. After simulation we can observe that the radiation pattern for this antenna is omni-directional measured with bandwidth impedance of 40 MHz with the -1dB gain which is maximum. We use CST Tool for simulation and fabrication technology is as simple even with this FR4 material.

scholarly journals Development of Single-Crystalline SiC Boule Fabrication Technology as Substrate Material for Electronic Devices.

Materia Japan ◽  
1997 ◽  
Vol 36 (4) ◽  
pp. 370-372
Author(s):  
Masatoshi Kanaya ◽  
Noboru Ohtani ◽  
Masakazu Katsuno ◽  
Jun Takahashi ◽  
Hirokatsu Yashiro
Keyword(s):  
Electronic Devices ◽  
Substrate Material ◽  
Fabrication Technology ◽  
Single Crystalline

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

The effect of temperature on high-resolution TEM image contrast

1995 ◽  
Vol 53 ◽  
pp. 640-641
Author(s):  
T. Geipel ◽  
W. Mader ◽  
P. Pirouz
Keyword(s):  
Form Factor ◽  
Inelastic Scattering ◽  
Accurate Method ◽  
Waller Factor ◽  
Effect Of Temperature ◽  
Specimen Thickness ◽  
Influence Of Temperature ◽  
Debye Waller Factor ◽  
Influence Of Temperature On ◽  
Atomic Form Factor

Temperature affects both elastic and inelastic scattering of electrons in a crystal. The Debye-Waller factor, B, describes the influence of temperature on the elastic scattering of electrons, whereas the imaginary part of the (complex) atomic form factor, fc = fr + ifi, describes the influence of temperature on the inelastic scattering of electrons (i.e. absorption). In HRTEM simulations, two possible ways to include absorption are: (i) an approximate method in which absorption is described by a phenomenological constant, μ, i.e. fi; - μfr, with the real part of the atomic form factor, fr, obtained from Hartree-Fock calculations, (ii) a more accurate method in which the absorptive components, fi of the atomic form factor are explicitly calculated. In this contribution, the inclusion of both the Debye-Waller factor and absorption on HRTEM images of a (Oll)-oriented GaAs crystal are presented (using the EMS software.Fig. 1 shows the the amplitudes and phases of the dominant 111 beams as a function of the specimen thickness, t, for the cases when μ = 0 (i.e. no absorption, solid line) and μ = 0.1 (with absorption, dashed line).

Distortion in lattice-resolution scanned-probe microscope images

1993 ◽  
Vol 51 ◽  
pp. 522-523
Author(s):  
L. Fei
Keyword(s):  
Film Studies ◽  
Lattice Structure ◽  
Substrate Material ◽  
Repulsive Force ◽  
Instrument Calibration ◽  
Microscope Images ◽  
Probe Microscope ◽  
Electron Microscopes ◽  
Diffraction Patterns ◽  
Lattice Resolution

Scanned probe microscopes (SPM) have been widely used for studying the structure of a variety material surfaces and thin films. Interpretation of SPM images, however, remains a debatable subject at best. Unlike electron microscopes (EMs) where diffraction patterns and images regularly provide data on lattice spacings and angles within 1-2% and ∽1° accuracy, our experience indicates that lattice distances and angles in raw SPM images can be off by as much as 10% and ∽6°, respectively. Because SPM images can be affected by processes like the coupling between fast and slow scan direction, hysteresis of piezoelectric scanner, thermal drift, anisotropic tip and sample interaction, etc., the causes for such a large discrepancy maybe complex even though manufacturers suggest that the correction can be done through only instrument calibration.We show here that scanning repulsive force microscope (SFM or AFM) images of freshly cleaved mica, a substrate material used for thin film studies as well as for SFM instrument calibration, are distorted compared with the lattice structure expected for mica.

Microstructural characterization of YBaCuO Films on LaAlO3 substrates

1989 ◽  
Vol 47 ◽  
pp. 180-181
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
N. Lewis ◽  
L. G. Turner
Keyword(s):  
Dielectric Constant ◽  
Single Crystal ◽  
Film Growth ◽  
Microstructural Characterization ◽  
Lattice Parameter ◽  
Film Plane ◽  
Substrate Material ◽  
High Loss ◽  
Amorphous Substrates ◽  
High Dielectric

There have been a large number of recent studies of the growth of Y-Ba-Cu-O thin films, and these studies have employed a variety of substrates and growth techniques. To date, the highest values of Tc and Jc have been found for films grown by sputtering or coevaporation on single-crystal SrTiO3 substrates, which produces a uniaxially-aligned film with the YBa2Cu3Ox c-axis normal to the film plane. Multilayer growth of films on the same substrate produces a triaxially-aligned film (regions of the film have their c-axis parallel to each of the three substrate <100> directions) with lower values of Jc. Growth of films on a variety of other polycrystalline or amorphous substrates produces randomly-oriented polycrystalline films with low Jc. Although single-crystal SrTiO3 thus produces the best results, this substrate material has a number of undesireable characteristics relative to electronic applications, including very high dielectric constant and a high loss tangent at microwave frequencies. Recently, Simon et al. have shown that LaAlO3 could be used as a substrate for YBaCuO film growth. This substrate is essentially a cubic perovskite with a lattice parameter of 0.3792nm (it has a slight rhombohedral distortion at room temperature) and this material exhibits much lower dielectric constant and microwave loss tangents than SrTiO3. It is also interesting from a film growth standpoint since it has a slightly smaller lattice parameter than YBa2Cu3Ox (a=0.382nm, b=c/3=0.389nm), while SrTiO3 is slightly larger (a=0.3905nm).

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