Impact of processing and growth conditions on the site-catalyzed patterned growth of GaAs nanowires by molecular beam epitaxy

2017 ◽  
Author(s):  
Manish Sharma ◽  
Pavan K. Kasanaboina ◽  
Shanthi Iyer
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Patterned Growth ◽  
Gaas Nanowires

Effect of SiO2 Thickness on GaAs Nanowires on Si (111) Substrates Grown by Molecular Beam Epitaxy

2015 ◽  
Vol 1131 ◽  
pp. 16-19
Author(s):  
Patchareewan Prongjit ◽  
Samatcha Vorathamrong ◽  
Somsak Panyakeow ◽  
Chiraporn Tongyam ◽  
Piyasan Prasertthdam ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Molecular Beam Epitaxy ◽  
Scanning Electron Microscope ◽  
Structural Properties ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Si Substrate ◽  
Growth Technique ◽  
Gaas Nanowires ◽  
Scanning Electron

The GaAs nanowires are grown on Si (111) substrates by Ga-assisted molecular beam epitaxy growth technique. The effect of SiO2 thickness on the structural properties of GaAs nanowires is investigated by Scanning Electron Microscope (SEM). The nucleation of GaAs nanowires related to the presence of a SiO2 layer previously coated on Si substrate. The results show that the density, length, and diameter of GaAs nanowires strongly depend on the oxidation time (or SiO2 thickness).

KINETIC SURFACE ROUGHENING AND MOLECULAR BEAM EPITAXY

Fractals ◽  
1993 ◽  
Vol 01 (04) ◽  
pp. 784-794 ◽  
Author(s):  
S. DAS SARMA
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Coarse Grained ◽  
Solid State Physics ◽  
Growth Phenomenon ◽  
Recent Developments ◽  
Growth Equations ◽  
Universality Classes ◽  
Actual Growth

We review recent developments in our understanding of Molecular Beam Epitaxy as a kinetically rough growth phenomenon. It is argued that while the most general growth conditions lead to generic growth universality, actual growth conditions allow a complex interplay of several different dynamic universality classes producing rich crossover behavior determined by growth temperature, incident flux rate, and local solid state physics and chemistry of the growing material. Possible coarse-grained continuum growth equations which may be applicable to Molecular Beam Epitaxy are discussed.

scholarly journals Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy

2018 ◽  
Vol 30 (6) ◽  
pp. 065602 ◽  
Author(s):  
Suzanne Lancaster ◽  
Heiko Groiss ◽  
Tobias Zederbauer ◽  
Aaron M Andrews ◽  
Donald MacFarland ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Nanowires ◽  
Axial Growth

Impact of Buffered Layer Growth Conditions on Grown-In Vacancy Concentrations in Molecular Beam Epitaxy Silicon Germanium

2004 ◽  
Vol 809 ◽  
Author(s):  
Kareem M. Shoukri ◽  
Yaser M. Haddara ◽  
Andrew P. Knights ◽  
Paul G. Coleman ◽  
Mohammad M. Rahman ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Point Defects ◽  
Growth Temperature ◽  
Silicon Germanium ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Layer Growth ◽  
Vacancy Clusters ◽  
Temperature And Growth

ABSTRACTSilicon-Germanium (SiGe) has become increasingly attractive to semiconductor manufacturers over the last decade for use in high performance devices. In order to produce thin layers of device grade SiGe with low concentrations of point defects and well-controlled doping profiles, advanced growth and deposition techniques such as molecular beam epitaxy (MBE) are used. One of the key issues in modeling dopant diffusion during subsequent processing is the concentration of grown-in point defects. The incorporation of vacancy clusters and vacancy point defects in 200nm SiGe/Si layers grown by molecular beam epitaxy over different buffer layers has been observed using beam-based positron annihilation spectroscopy. Variables included the type of buffer layer, the growth temperature and growth rate for the buffer, and the growth temperature and growth rate for the top layer. Different growth conditions resulted in different relaxation amounts in the top layer, but in all samples the dislocation density was below 106 cm−2. Preliminary results indicate a correlation between the size, type and concentration of vacancy defects and the buffer layer growth temperature. At high buffer layer growth temperature of 500°C the vacancy point defect concentration is below the PAS detectable limit of approximately 1015 cm−3. As the buffer layer growth is decreased to a minimum value of 300°C, large vacancy clusters are observed in the buffered layer and vacancy point defects are observed in the SiGe film. These results are relevant to the role played by point defects grown-in at temperatures below ∼350°C in modeling dopant diffusion during processing.

Properties of GaN epilayers with various growth conditions grown by gas source molecular beam epitaxy

1998 ◽  
Vol 191 (1-2) ◽  
pp. 34-38
Author(s):  
Xiaobing Li ◽  
Dianzhao Sun ◽  
Jianping Zhang ◽  
Shirong Zhu ◽  
Meiying Kong
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Gas Source

scholarly journals Growth of InN By MBE

2000 ◽  
Vol 5 (S1) ◽  
pp. 181-187
Author(s):  
W.-L. Chen ◽  
R. L. Gunshor ◽  
Jung Han ◽  
K. Higashimine ◽  
N. Otsuka
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Series Of Experiments

A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.

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