Effect of growth conditions, surface orientation, and alloy composition on Cl incorporation and activation in ZnSe and Zn[sub 1−x]Mg[sub x]Se grown by molecular beam epitaxy

2005 ◽  
Vol 23 (4) ◽  
pp. 1814 ◽  
Author(s):  
B. L. VanMil ◽  
R. P. Tompkins ◽  
Ke Feng ◽  
C. H. Swartz ◽  
N. C. Giles ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Alloy Composition ◽  
Growth Conditions ◽  
Surface Orientation

KINETIC SURFACE ROUGHENING AND MOLECULAR BEAM EPITAXY

Fractals ◽  
1993 ◽  
Vol 01 (04) ◽  
pp. 784-794 ◽  
Author(s):  
S. DAS SARMA
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Coarse Grained ◽  
Solid State Physics ◽  
Growth Phenomenon ◽  
Recent Developments ◽  
Growth Equations ◽  
Universality Classes ◽  
Actual Growth

We review recent developments in our understanding of Molecular Beam Epitaxy as a kinetically rough growth phenomenon. It is argued that while the most general growth conditions lead to generic growth universality, actual growth conditions allow a complex interplay of several different dynamic universality classes producing rich crossover behavior determined by growth temperature, incident flux rate, and local solid state physics and chemistry of the growing material. Possible coarse-grained continuum growth equations which may be applicable to Molecular Beam Epitaxy are discussed.

Impact of Buffered Layer Growth Conditions on Grown-In Vacancy Concentrations in Molecular Beam Epitaxy Silicon Germanium

2004 ◽  
Vol 809 ◽  
Author(s):  
Kareem M. Shoukri ◽  
Yaser M. Haddara ◽  
Andrew P. Knights ◽  
Paul G. Coleman ◽  
Mohammad M. Rahman ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Point Defects ◽  
Growth Temperature ◽  
Silicon Germanium ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Layer Growth ◽  
Vacancy Clusters ◽  
Temperature And Growth

ABSTRACTSilicon-Germanium (SiGe) has become increasingly attractive to semiconductor manufacturers over the last decade for use in high performance devices. In order to produce thin layers of device grade SiGe with low concentrations of point defects and well-controlled doping profiles, advanced growth and deposition techniques such as molecular beam epitaxy (MBE) are used. One of the key issues in modeling dopant diffusion during subsequent processing is the concentration of grown-in point defects. The incorporation of vacancy clusters and vacancy point defects in 200nm SiGe/Si layers grown by molecular beam epitaxy over different buffer layers has been observed using beam-based positron annihilation spectroscopy. Variables included the type of buffer layer, the growth temperature and growth rate for the buffer, and the growth temperature and growth rate for the top layer. Different growth conditions resulted in different relaxation amounts in the top layer, but in all samples the dislocation density was below 106 cm−2. Preliminary results indicate a correlation between the size, type and concentration of vacancy defects and the buffer layer growth temperature. At high buffer layer growth temperature of 500°C the vacancy point defect concentration is below the PAS detectable limit of approximately 1015 cm−3. As the buffer layer growth is decreased to a minimum value of 300°C, large vacancy clusters are observed in the buffered layer and vacancy point defects are observed in the SiGe film. These results are relevant to the role played by point defects grown-in at temperatures below ∼350°C in modeling dopant diffusion during processing.

Properties of GaN epilayers with various growth conditions grown by gas source molecular beam epitaxy

1998 ◽  
Vol 191 (1-2) ◽  
pp. 34-38
Author(s):  
Xiaobing Li ◽  
Dianzhao Sun ◽  
Jianping Zhang ◽  
Shirong Zhu ◽  
Meiying Kong
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Gas Source

scholarly journals Growth of InN By MBE

2000 ◽  
Vol 5 (S1) ◽  
pp. 181-187
Author(s):  
W.-L. Chen ◽  
R. L. Gunshor ◽  
Jung Han ◽  
K. Higashimine ◽  
N. Otsuka
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Series Of Experiments

A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.

Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy

2016 ◽  
Vol 108 (5) ◽  
pp. 053110 ◽  
Author(s):  
J. Treu ◽  
M. Speckbacher ◽  
K. Saller ◽  
S. Morkötter ◽  
M. Döblinger ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Alloy Composition ◽  
Nanowire Arrays ◽  
Catalyst Free ◽  
Selective Area

Effect of Growth Conditions on Electronic and Structural Properties of GZO Films Grown by Plasma-enhanced Molecular Beam Epitaxy on p-GaN(0001)/Sapphire Templates

2011 ◽  
Vol 1315 ◽  
Author(s):  
H.Y. Liu ◽  
V. Avrutin ◽  
N. Izyumskaya ◽  
M.A. Reshchikov ◽  
S. Wolgast ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Three Dimensional ◽  
Optical Transmittance ◽  
Growth Conditions ◽  
Visible Spectral Range ◽  
Light Emitting ◽  
Surface Morphologies

Abstract:We report on a strong effect of p-GaN surface morphology on the growth mode and surface roughness of ZnO:Ga films grown by plasma-assisted molecular-beam epitaxy on p-GaN/c-sapphire templates. A range of ZnO:Ga surface morphologies varying from rough surfaces with well defined three-dimensional islands, capable to enhance light extraction in light-emitting diodes, to rather smooth surfaces with a surface roughness of ~ 2 nm suitable for vertical-cavity lasers can be achieved by controlling the surface morphologies of p-GaN. Optical transmittance measurements revealed high transparency exceeding 90% in the visible spectral range for ZnO:Ga with both types of surface morphology.

Measurement and Control of The Indium Composition Profile Near The InGaAs on GaAs Interface During Mbe

1995 ◽  
Vol 379 ◽  
Author(s):  
Ron Kaspi ◽  
Keith R. Evans
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Alloy Composition ◽  
Composition Profile ◽  
Indium Composition ◽  
And Control ◽  
Measurement And Control

ABSTRACTThe compositional abruptness at both the normal and the inverted InGaAs/Ga(Al)As interface is inherently limited by the surface segregation of In atoms during molecular beam epitaxy. We find, for example, that the intended alloy composition in In0.22Ga0.78As layers is not reached until nearly 35 Å from the normal InGaAs on GaAs interface for growth at 500 °C. We propose and demonstrate a scheme to control and eliminate the compositionally graded region at the normal interface by the artificial formation of an In surface segregated layer (predeposition) prior to the growth of InGaAs.

An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN

1998 ◽  
Vol 264-268 ◽  
pp. 1173-1176 ◽  
Author(s):  
B. Schöttker ◽  
J. Kühler ◽  
Donat J. As ◽  
D. Schikora ◽  
K. Lischka
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Accurate Method ◽  
Growth Conditions ◽  
Cubic Gan
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