scholarly journals Effects of 4.5 MeV and 63 MeV proton irradiation on carrier lifetime of InAs/InAsSb type-II superlattices (Conference Presentation)

2017 ◽  
Author(s):  
Emil A. Kadlec ◽  
Michael D. Goldflam ◽  
Edward Bielejec ◽  
Jin K. Kim ◽  
Benjamin V. Olson ◽  
...  
Keyword(s):  
Proton Irradiation ◽  
Carrier Lifetime ◽  
Type Ii ◽  
Type Ii Superlattices

Influence of carrier localization on minority carrier lifetime in InAs/InAsSb type-II superlattices

2015 ◽  
Vol 107 (20) ◽  
pp. 201107 ◽  
Author(s):  
Zhi-Yuan Lin ◽  
Shi Liu ◽  
Elizabeth H. Steenbergen ◽  
Yong-Hang Zhang
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Type Ii ◽  
Carrier Localization ◽  
Type Ii Superlattices

Electroabsorption in the type II superlattices

1992 ◽  
Vol 60 (16) ◽  
pp. 1969-1971 ◽  
Author(s):  
Shaozhong Li ◽  
Jacob B. Khurgin
Keyword(s):  
Type Ii ◽  
Type Ii Superlattices

Impact of Be-doping on the material properties of InAs/InAsSb type-II superlattices for infrared detection

2013 ◽  
Author(s):  
Elizabeth H. Steenbergen ◽  
Said Elhamri ◽  
T. J. Asel ◽  
William C. Mitchel ◽  
Sarah T. Hierath ◽  
...  
Keyword(s):  
Material Properties ◽  
Infrared Detection ◽  
Type Ii ◽  
Type Ii Superlattices

Minority carrier lifetime and diffusion length in type II superlattice barrier devices

2019 ◽  
Vol 96 ◽  
pp. 155-162 ◽  
Author(s):  
P.C. Klipstein ◽  
Y. Benny ◽  
S. Gliksman ◽  
A. Glozman ◽  
E. Hojman ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Lifetime ◽  
Type Ii ◽  
Type Ii Superlattice ◽  
And Diffusion

Extremely long carrier lifetime at intermediate states in wall-inserted type II quantum dot absorbers

2012 ◽  
Vol 112 (9) ◽  
pp. 094305 ◽  
Author(s):  
Daisuke Sato ◽  
Junya Ota ◽  
Kazutaka Nishikawa ◽  
Yasuhiko Takeda ◽  
Naoya Miyashita ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Carrier Lifetime ◽  
Type Ii ◽  
Intermediate States
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