Optimal indium-gallium-nitride Schottky-barrier thin-film solar cells

2017 ◽  
Author(s):  
Thomas H. Anderson ◽  
Peter B. Monk ◽  
Akhlesh Lakhtakia
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Gallium Nitride ◽  
Schottky Barrier ◽  
Indium Gallium Nitride ◽  
Thin Film Solar Cells ◽  
Indium Gallium

Two-dimensional GeSe for high performance thin-film solar cells

2018 ◽  
Vol 6 (12) ◽  
pp. 5032-5039 ◽  
Author(s):  
Xingshuai Lv ◽  
Wei Wei ◽  
Cong Mu ◽  
Baibiao Huang ◽  
Ying Dai
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Schottky Barrier ◽  
High Performance ◽  
Thin Film Solar Cells ◽  
Two Dimensional ◽  
Photovoltaic Devices ◽  
Promising Candidate

Multilayer GeSe can be a promising candidate for flexible photovoltaic devices because of the low Schottky barrier at the back electrode and high PCE of ∼18%.

Optical Absorption at Digitally and Continuously Graded Indium Gallium Nitride Schottky Barriers

2007 ◽  
Vol 1012 ◽  
Author(s):  
Choudhury Jayant Praharaj
Keyword(s):  
Gallium Nitride ◽  
Optical Absorption ◽  
Schottky Barrier ◽  
Indium Gallium Nitride ◽  
Spectral Response ◽  
Alloy System ◽  
Schottky Barriers ◽  
Material System ◽  
Indium Gallium ◽  
Absorption Characteristics

AbstractWe present numerical calculations of the optical absorption characteristics of graded Indium Gallium Nitride Schottky Barriers, and study their implications for photovoltaic and photodetector applications. We consider the two cases of digital and continuous grading because of their different effects on the collection of photo-generated carriers due to band discontinuities. Composition grading can achieve desired spectral response between the ranges of 0.7 eV and 3.43 eV afforded by the Indium Gallium Nitride alloy system. The presence of spontaneous and piezoelectric polarizations in this material system adds bulk and/or interface bound charges in graded layers. This has a non-trivial effect on the band profile seen by the photo-generated carriers. The layer thicknesses needed for optimal absorption characteristics are well above the theoretical critical thickness limits reported in the literature for abrupt heterojunctions. However, experimental data about critical thicknesses is scarce, especially for graded compositions. Therefore, we calculate the characteristics of the Schottky barrier for the case of spontaneous polarization only and also for the case of both spontaneous and piezoelectric polarization assuming no relaxation. The low or even negative Schottky barrier heights at low Gallium composition necessitates the use of high Gallium composition layers next to the metal, in order to suppress the excessive dark currents

scholarly journals III-Nitride Nanowires: Future Prospective for Photovoltaic Applications

2020 ◽  
Author(s):  
Soumyaranjan Routray ◽  
Trupti Lenka
Keyword(s):  
Solar Cells ◽  
Gallium Nitride ◽  
Indium Gallium Nitride ◽  
High Efficiency ◽  
Solar Spectrum ◽  
Photon Absorption ◽  
Current Generation ◽  
Photovoltaic Applications ◽  
Indium Gallium ◽  
Growth Technology

Photovoltaic (PV) technology could be a promising candidate for clean and green source of energy. The nanowire technology provides extra mileage over planar solar cells in every step from photon absorption to current generation. Indium Gallium Nitride (InxGa1-xN) is a recently revised material with such a bandgap to absorb nearly whole solar spectrum to increase the conversion efficiency copiously. One of the major technological challenge is in-built polarization charges. This chapter highlights the basic advantageous properties of InxGa 1−xN materials, its growth technology and state-of-the-art application towards PV devices. The most important challenges that remain in realizing a high-efficiency InxGa 1−xN PV device are also discussed. III-Nitride nanowires are also explored in detail to overcome the challenges. Finally, conclusions are drawn about the potential and future aspect of InxGa 1−xN material based nanowires towards terrestrial as well as space photovoltaic applications.

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