Two-dimensional GeSe for high performance thin-film solar cells

2018 ◽  
Vol 6 (12) ◽  
pp. 5032-5039 ◽  
Author(s):  
Xingshuai Lv ◽  
Wei Wei ◽  
Cong Mu ◽  
Baibiao Huang ◽  
Ying Dai

Multilayer GeSe can be a promising candidate for flexible photovoltaic devices because of the low Schottky barrier at the back electrode and high PCE of ∼18%.

Solar RRL ◽  
2021 ◽  
pp. 2100108
Author(s):  
Shih-Chi Yang ◽  
Jordi Sastre ◽  
Maximilian Krause ◽  
Xiaoxiao Sun ◽  
Ramis Hertwig ◽  
...  

2002 ◽  
Vol 403-404 ◽  
pp. 258-262 ◽  
Author(s):  
E Christoffel ◽  
M Rusu ◽  
A Zerga ◽  
S Bourdais ◽  
S Noël ◽  
...  

RSC Advances ◽  
2016 ◽  
Vol 6 (63) ◽  
pp. 58786-58795 ◽  
Author(s):  
Jianmin Li ◽  
Jianliu Huang ◽  
Yan Zhang ◽  
Yaguang Wang ◽  
Cong Xue ◽  
...  

Cu2SnS3 as a promising candidate for the next generation of thin film solar cells still lacks of further understanding and study.


2022 ◽  
Vol 8 ◽  
Author(s):  
Aimei Zhao ◽  
Yanping Wang ◽  
Bing Li ◽  
Dongmei Xiang ◽  
Zhuo Peng ◽  
...  

CuSbS2, as a direct bandgap semiconductor, is a promising candidate for fabricating flexible thin-film solar cells due to its low grain growth temperature (300°C–450°C). Uniform and highly crystalline CuSbS2 thin films are crucial to improving device performance. However, uniform CuSbS2 is difficult to obtain during electrodeposition and post-sulfurization due to the “dendritic” deposition of Cu on Mo substrates. In this study, Sb/Cu layers were sequentially pulse electrodeposited on Mo substrates. By adjusting the pulse parameters, smooth and uniform Sb layers were prepared on Mo, and a flat Cu layer was obtained on Sb without any dendritic clusters. A two-step annealing process was employed to fabricate CuSbS2 thin films. The effects of temperature on phases and morphologies were investigated. CuSbS2 thin films with good crystallinity were obtained at 360°C. As the annealing temperature increased, the crystallinity of the films decreased. The CuSbS2 phase transformed into a Cu3SbS4 phase with the temperature increase to 400°C. Finally, a 0.90% efficient solar cell was obtained using the CuSbS2 thin films annealed at 360°C.


2016 ◽  
Vol 4 (10) ◽  
pp. 3798-3805 ◽  
Author(s):  
Jiahua Tao ◽  
Leilei Chen ◽  
Huiyi Cao ◽  
Chuanjun Zhang ◽  
Junfeng Liu ◽  
...  

A simple and cost-effective co-electrodeposition process has been demonstrated to fabricate high-performance Cu2ZnSnS4 (CZTS) photovoltaic materials with composition tunability and phase controllability.


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