The thickness correction of sol-gel coating using ion-beam etching in the preparation of antireflection coating

Author(s):  
Siyu Dong ◽  
Lingyun Xie ◽  
Hongfei Jiao ◽  
Jinlong Zhang ◽  
Zhanshan Wang ◽  
...  
2017 ◽  
Vol 6 (9) ◽  
pp. P653-P659 ◽  
Author(s):  
D. Visser ◽  
Z. Ye ◽  
C. S. Prajapati ◽  
N. Bhat ◽  
S. Anand

2020 ◽  
Vol 156 ◽  
pp. 111578
Author(s):  
Xiaolong Jiang ◽  
Wei Liao ◽  
Bo Li ◽  
Xia Xiang ◽  
Xiaodong Yuan ◽  
...  

2022 ◽  
Vol 92 (1) ◽  
pp. 108
Author(s):  
А.В. Малевская ◽  
Н.Д. Ильинская ◽  
Ю.М. Задиранов ◽  
А.А. Блохин ◽  
Д.А. Малевский ◽  
...  

Investigation and development of the post-growth technology for fabricating multi-junction photovoltaic converters based on GaInP/GaInAs/Ge heterostructure has been carried out. Antireflection coating, ohmic contacts and mesa-structure forming stages have been reviewed. The technology of n+-GaAs contact layer etching with the help of plasma-chemical, liquid and ion-beam etching has been investigated. Antireflection coefficient of radiation from the heterostructure with TiOx/SiO2 (x close to 2) antireflection coating surface was less then 3% in wavelength range 450-850 nm. The value of contact resistance for n- and p-type conductivity was 3E−5 − 3E−6 ohm · cm2, the decrease of photosensitive region shading degree at increased bus-bar conductivity has been archived. The mesa-structure surface current leakage decreased to the value of E-9 A at voltage less then 1 V.


1993 ◽  
Vol 310 ◽  
Author(s):  
P. F. Baude ◽  
C. Ye ◽  
D.L. Polla

AbstractWet chemical, reactive ion etching and reactive ion-beam etching of sol-gel prepared PZT (54/46) [Pb(Zr,Ti)O3], Lanthanum doped PZT [PLZT (9/65/35)] and LiTaO3 have been investigated. Wet chemical etching using an HCI-HF solution, reactive-ion etching using a SF6 plasma and chemically assisted ion-beam etching (CAIBE) using a xenon plasma and chlorine reactive gas were used. Etch rates for each method were determined and the ability to define small features in the thin film ferroelectric was investigated. It was found that for structures smaller than approximately 20 × 20 μm2, chemically assisted ion beam etching provided by far the best results. 3 × 3 μm2 capacitor and 2 μm wide optical waveguide structures in PZT, PLZT respectively, were successfully fabricated using a CAIBE system. An etch depth monitor enabled accurate in-situ etch rate monitoring of the PLZT and PZT thin films.


Author(s):  
А.В. Малевская ◽  
Ю.М. Задиранов ◽  
А.А. Блохин ◽  
В.М. Андреев

Investigations of antireflection coating creating for multijunction solar cells based on AIIIBV heterostructures have been carried out. Investigated were modes of treatment of a heterostructure surface with application of plasma-chemical, liquid chemical and ion-beam etching methods. Technology for creating antireflection coating based on ТiOx/SiO2 layers was developed. Improvement of parameters of coating adhesion to the heterostructure surface and reduction of the reflection coefficient in multijunction solar cells were achieved.


1991 ◽  
Vol 243 ◽  
Author(s):  
P.F. Baude ◽  
C. Ye ◽  
T. Tamagawa ◽  
D.L. Polla

AbstractCrack free transparent ferroelectric PLZT (9/65/35) thin films were deposited on silicon substrates using the sol-gel deposition technique. An intermediate layer of PLT was used to improve the PLZT's optical quality and to reduce the amount of film cracking. Wet chemical, plasma and reactive ion etching are investigated as means of realizing the necessary waveguide structures. Waveguiding is observed in 2-4mm long PLZT (9/65/35) fabricated by reactive ion beam etching.


Author(s):  
M. Spector ◽  
A. C. Brown

Ion beam etching and freeze fracture techniques were utilized in conjunction with scanning electron microscopy to study the ultrastructure of normal and diseased human hair. Topographical differences in the cuticular scale of normal and diseased hair were demonstrated in previous scanning electron microscope studies. In the present study, ion beam etching and freeze fracture techniques were utilized to reveal subsurface ultrastructural features of the cuticle and cortex.Samples of normal and diseased hair including monilethrix, pili torti, pili annulati, and hidrotic ectodermal dysplasia were cut from areas near the base of the hair. In preparation for ion beam etching, untreated hairs were mounted on conducting tape on a conducting silicon substrate. The hairs were ion beam etched by an 18 ky argon ion beam (5μA ion current) from an ETEC ion beam etching device. The ion beam was oriented perpendicular to the substrate. The specimen remained stationary in the beam for exposures of 6 to 8 minutes.


Author(s):  
R. T. Chen ◽  
R.A. Norwood

Sol-gel processing has been used to control the structure of a material on a nanometer scale in preparing advanced ceramics and glasses. Film coating using the sol-gel process was also found to be a viable process technology in applications such as optical, porous, antireflection and hard coatings. In this study, organically modified silicate (Ormosil) coatings are applied to PET films for various industrial applications. Sol-gel materials are known to exhibit nanometer scale structures which havepreviously been characterized by small-angle X-ray scattering (SAXS), neutron scattering and light scattering. Imaging of the ultrafine sol-gel structures has also been performed using an ultrahigh resolution replica/TEM technique. The objective of this study was to evaluate the ultrafine structures inthe sol gel coatings using a direct imaging technique: atomic force microscopy (AFM). In addition, correlation of microstructures with processing parameters, coating density and other physical properties will be discussed.The materials evaluated are organically modified silicate coatings on PET film substrates. Refractive index measurement by the prism coupling method was used to assess density of the sol-gel coating.AFM imaging was performed on a Nanoscope III AFM (by Digital Instruments) using constant force mode. Solgel coating samples coated with a thin layer of Ft (by ion beam sputtering) were also examined by STM in order to confirm the structures observed in the contact type AFM. In addition, to compare the previous results, sol-gel powder samples were also prepared by ultrasonication followed by Pt/Au shadowing and examined using a JEOL 100CX TEM.


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