Extreme-ultraviolet and electron beam lithography processing using water-developable resist material

2017 ◽  
Author(s):  
Satoshi Takei
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Extreme Ultraviolet

scholarly journals Universal direct patterning of colloidal quantum dots by (extreme) ultraviolet and electron beam lithography

Nanoscale ◽  
2020 ◽  
Vol 12 (20) ◽  
pp. 11306-11316
Author(s):  
Christian D. Dieleman ◽  
Weiyi Ding ◽  
Lianjia Wu ◽  
Neha Thakur ◽  
Ivan Bespalov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Beam ◽  
Electron Beam Lithography ◽  
Extreme Ultraviolet ◽  
Luminescent Properties ◽  
Colloidal Quantum Dots ◽  
Direct Patterning ◽  
One Step ◽  
Patterning Technique

A general, one-step patterning technique for colloidal quantum dots by direct optical or e-beam lithography. Photons (5.5–91.9 eV) and electrons (3 eV–50 kV) crosslink and immobilize QDs down to tens of nm while preserving the luminescent properties.

Dynamics of Radical Cation of Poly(styrene acrylate)-Based Chemically Amplified Resist for Extreme Ultraviolet and Electron Beam Lithography

2011 ◽  
Vol 50 (6S) ◽  
pp. 06GD03 ◽  
Author(s):  
Yasuharu Tajima ◽  
Kazumasa Okamoto ◽  
Takahiro Kozawa ◽  
Seiichi Tagawa ◽  
Ryoko Fujiyoshi ◽  
...  
Keyword(s):  
Electron Beam ◽  
Radical Cation ◽  
Electron Beam Lithography ◽  
Extreme Ultraviolet ◽  
Chemically Amplified ◽  
Chemically Amplified Resist

Dynamics of Radical Cation of Poly(styrene acrylate)-Based Chemically Amplified Resist for Extreme Ultraviolet and Electron Beam Lithography

2011 ◽  
Vol 50 (6) ◽  
pp. 06GD03 ◽  
Author(s):  
Yasuharu Tajima ◽  
Kazumasa Okamoto ◽  
Takahiro Kozawa ◽  
Seiichi Tagawa ◽  
Ryoko Fujiyoshi ◽  
...  
Keyword(s):  
Electron Beam ◽  
Radical Cation ◽  
Electron Beam Lithography ◽  
Extreme Ultraviolet ◽  
Chemically Amplified ◽  
Chemically Amplified Resist

Electron Beam Lithography Simulation for the Patterning of Extreme Ultraviolet Masks

2008 ◽  
Vol 47 (6) ◽  
pp. 4909-4912 ◽  
Author(s):  
N. Tsikrikas ◽  
G. P. Patsis ◽  
I. Raptis ◽  
A. Gerardino ◽  
E. Quesnel
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Extreme Ultraviolet ◽  
Lithography Simulation

Effect of Amine Additive in Photoacid Generator Bonded Resist for Extreme Ultraviolet and Electron Beam Lithography

2009 ◽  
Vol 48 (6) ◽  
pp. 06FC10
Author(s):  
Tomomi Nakahara ◽  
Takeo Watanabe ◽  
Hiroo Kinoshita ◽  
Takayasu Mochizuki ◽  
Yoshiyuki Takahara ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Extreme Ultraviolet ◽  
Photoacid Generator

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

Fabrication of Si photonic waveguides by electron beam lithography using improved proximity effect correction

2020 ◽  
Vol 59 (12) ◽  
pp. 126502
Author(s):  
Moataz Eissa ◽  
Takuya Mitarai ◽  
Tomohiro Amemiya ◽  
Yasuyuki Miyamoto ◽  
Nobuhiko Nishiyama
Keyword(s):  
Electron Beam ◽  
Proximity Effect ◽  
Electron Beam Lithography ◽  
Photonic Waveguides ◽  
Proximity Effect Correction

Salicidation process for submicrometre gate MOSFET fabrication using a resistless electron beam lithography process

1999 ◽  
Vol 35 (15) ◽  
pp. 1283 ◽  
Author(s):  
S. Michel ◽  
E. Lavallée ◽  
J. Beauvais ◽  
J. Mouine
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Lithography Process
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