Photoluminescence diagnostic of semi-insulating materials for ion-implanted and quantum-size structures on gallium-arsenide-based micro-, opto-, and quantum electronics devices

1995 ◽  
Author(s):  
Fedir V. Motsnyi ◽  
Mikhail P. Lisitsa
Keyword(s):  
Gallium Arsenide ◽  
Quantum Electronics ◽  
Insulating Materials ◽  
Quantum Size ◽  
Ion Implanted

Ion‐implanted nitrogen in gallium arsenide

1973 ◽  
Vol 44 (10) ◽  
pp. 4393-4399 ◽  
Author(s):  
A. H. Kachare ◽  
W. G. Spitzer ◽  
A. Kahan ◽  
F. K. Euler ◽  
T. A. Whatley
Keyword(s):  
Gallium Arsenide ◽  
Ion Implanted

Ultrafast carrier trapping in high energy ion implanted gallium arsenide

1996 ◽  
Vol 68 (16) ◽  
pp. 2225-2227 ◽  
Author(s):  
C. Jagadish ◽  
H. H. Tan ◽  
A. Krotkus ◽  
S. Marcinkevicius ◽  
K. P. Korona ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
High Energy ◽  
Carrier Trapping ◽  
Ultrafast Carrier ◽  
Ion Implanted

Transient and Furnace Annealing of Ion Implanted Gallium Arsenide

1980 ◽  
Vol 1 ◽  
Author(s):  
J. S. Williams ◽  
H. B. Harrison
Keyword(s):  
Gallium Arsenide ◽  
Solid Phase ◽  
Pulsed Lasers ◽  
Physical Processes ◽  
Furnace Annealing ◽  
Annealing Behaviour ◽  
Cw Laser ◽  
Similarities And Differences ◽  
Solid Phase Regrowth ◽  
Ion Implanted

ABSTRACTThis review examines the annealing behaviour of ion implanted gallium arsenide during furance, laser and e-beam processing.The two annealing regimes, namely solid phase regrowth via furnace or CW laser/e-beam annealing and liquid phase epitaxy produced by pulsed lasers/e-beam, are examined in some detail.Emphasis is placed upon an understanding of the physical processes which are important during the various annealing modes.Comparison with the annealing behaviour of ion implantedelemental semiconductors(notably silicon) is made throughout the review to highlight relevant similarities and differences between compound and elemental semiconductors.The electrical properties of annealed gallium arsenide layers are not treatedin any detail, although particular observations which are relevant to the annealing processes are briefly discussed.

Characterization of electroluminescent structures based on gallium arsenide ion-implanted with ytterbium and oxygen

2001 ◽  
Vol 35 (3) ◽  
pp. 325-330
Author(s):  
D. W. Palmer ◽  
V. A. Dravin ◽  
V. M. Konnov ◽  
E. A. Bobrova ◽  
N. N. Loiko ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Ion Implanted

Transient Annealing of Ion Implanted Gallium Arsenide

1982 ◽  
Vol 13 ◽  
Author(s):  
J.S. Williams
Keyword(s):  
Gallium Arsenide ◽  
Liquid Phase ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Solid Phase ◽  
Dopant Activation ◽  
Implantation Damage ◽  
Dopant Redistribution ◽  
Ion Implanted

ABSTRACTThis paper provides a brief overview of the application of transient annealing to the removal of ion implantation damage and dopant activation in GaAs. It is shown that both the liquid phase and solid phase annealing processes are more complex in GaAs than those observed in Si. Particular attention is given to observations of damage removal, surface dissociation, dopant redistribution, solubility and the electrical properties of GaAs. The various annealing mechanisms are discussed and areas in need of further investigation are identified.

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