Line-edge quality optimization of electron beam resist for high-throughput character projection exposure utilizing atomic force microscope analysis

2017 ◽  
Author(s):  
Rimon Ikeno ◽  
Yoshio Mita ◽  
Kunihiro Asada
Keyword(s):  
Electron Beam ◽  
Atomic Force Microscope ◽  
High Throughput ◽  
Quality Optimization ◽  
Microscope Analysis ◽  
Atomic Force ◽  
Atomic Force Microscope Analysis ◽  
Edge Quality

Advancement in fabrication of carbon nanotube tip for atomic force microscope using multi-axis nanomanipulator in scanning electron microscope

2022 ◽  
Author(s):  
Sanjeev Kumar Kanth ◽  
Anjli Sharma ◽  
Byong Chon Park ◽  
Woon Song ◽  
Hyun Rhu ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Carbon Nanotube ◽  
Scanning Electron Microscope ◽  
Atomic Force Microscope ◽  
Structural Integrity ◽  
Ion Beam ◽  
Rectilinear Motion ◽  
Atomic Force ◽  
Scanning Electron

Abstract We have constructed a new nanomanipulator (NM) in a field emission scanning electron microscope (FE-SEM) to fabricate carbon nanotube (CNT) tip to precisely adjust the length and attachment angle of CNT onto the mother atomic force microscope (AFM) tip. The new NM is composed of 2 modules, each of which has the degree of freedom of three-dimensional rectilinear motion x, y and z and one-dimensional rotational motion θ. The NM is mounted on the stage of a FE-SEM. With the system of 14 axes in total which includes 5 axes of FE-SEM and 9 axes of nano-actuators, it was possible to see CNT tip from both rear and side view about the mother tip. With the help of new NM, the attachment angle error could be reduced down to 0º as seen from both the side and the rear view, as well as, the length of the CNT could be adjusted with the precision using electron beam induced etching. For the proper attachment of CNT on the mother tip surface, the side of the mother tip was milled with focused ion beam. In addition, electron beam induced deposition was used to strengthen the adhesion between CNT and the mother tip. In order to check the structural integrity of fabricated CNT, transmission electron microscope image was taken which showed the fine cutting of CNT and the clean surface as well. Finally, the performance of the fabricated CNT tip was demonstrated by imaging 1-D grating and DNA samples with atomic force microscope in tapping mode.

scholarly journals Grating Metamaterials Based on CdTe/CdMgTe Quantum Wells as Terahertz Detectors for High Magnetic Field Applications

2020 ◽  
Vol 10 (8) ◽  
pp. 2807
Author(s):  
Dmitriy Yavorskiy ◽  
Maria Szoła ◽  
Krzysztof Karpierz ◽  
Rafał Bożek ◽  
Rafał Rudniewski ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electron Beam ◽  
Quantum Well ◽  
Quantum Wells ◽  
Atomic Force Microscope ◽  
High Magnetic Field ◽  
White Light ◽  
Electron Beam Lithography ◽  
Terahertz Detectors ◽  
Atomic Force

The cyclotron and magnetoplasmon resonances were studied at 2 K in grating metamaterials fabricated on wafers with one or two modulation doped CdTe/CdMgTe quantum wells. The gratings (with the period varied between 2 μ m and 8 μ m) were prepared with an electron beam lithography either by etching or by evaporation of Au. The gratings were studied with an atomic force microscope which revealed a correlation between the depth and width of etched grooves at a constant time of etching. The sharpest resonances observed are due to excitation of magnetoplasmon in the case of Au gratings on a wafer with one quantum well. Etched samples with two quantum wells showed the strongest tuneability of magnetoplasmon resonances with the period of the grating and illumination with white light. We showed that the samples studied can be used as resonant or quasi-resonant terahertz detectors tuneable with magnetic field and white light.

Transport in Thermal Dip Pen Nanolithography

2004 ◽  
Author(s):  
Brent A. Nelson ◽  
Tanya L. Wright ◽  
William P. King ◽  
Paul E. Sheehan ◽  
Lloyd J. Whitman
Keyword(s):  
Electron Beam ◽  
Atomic Force Microscope ◽  
Electron Beam Lithography ◽  
Room Temperature ◽  
Optical Lithography ◽  
Ambient Conditions ◽  
Atomic Force ◽  
Resolution Limits ◽  
Dip Pen Nanolithography

The manufacture of nanoscale devices is at present constrained by the resolution limits of optical lithography and the high cost of electron beam lithography. Furthermore, traditional silicon fabrication techniques are quite limited in materials compatibility and are not well-suited for the manufacture of organic and biological devices. One nanomanufacturing technique that could overcome these drawbacks is dip pen nanolithography (DPN), in which a chemical-coated atomic force microscope (AFM) tip deposits molecular ‘inks’ onto a substrate [1]. DPN has shown resolution as good as 5 nm [2] and has been performed with a large number of molecules, but has limitations. For molecules to ink the surface they must be mobile at room temperature, limiting the inks that can be used, and since the inks must be mobile in ambient conditions, there is no way to stop the deposition while the tip is in contact with the substrate. In-situ imaging of deposited molecules therefore causes contamination of the deposited features.

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