Surface analysis of chalcogenide semiconductors used in photovoltaics (Conference Presentation)

2017 ◽  
Author(s):  
Angus A. Rockett
Keyword(s):  
Surface Analysis ◽  
Chalcogenide Semiconductors

Chemical and Electrochemical Heteroepitaxial Growth of Chalcogenide Semiconductors from Solutions

1996 ◽  
Vol 451 ◽  
Author(s):  
D. Lincot ◽  
M. J. Furlong ◽  
M. Froment ◽  
R. Cortes ◽  
M. C. Bernard
Keyword(s):  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Basic Principles ◽  
Lattice Match ◽  
X Ray ◽  
Chalcogenide Semiconductors ◽  
Influence Of Temperature On ◽  
Deposition Processes ◽  
A Site ◽  
Site Selective

ABSTRACTChalcogenide semiconductors have been deposited epitaxially from aqueous solutions either chemically or electrochemically at growth rates of up to 0.7 μmhr−1. After recalling the basic principles of these deposition processes, results are presented concerning chemically deposited CdS on InP, GaP and CuInSe2 substrates, electrodeposited CdTe on InP, and CdSAnP heterostructures. Characterisation of these structures by RHEED, TEM, HRTEM, and glazing angle X ray diffraction allows to analyse the effects of substrate orientation, polarity, lattice match plus the influence of temperature on epitaxial growth. These results are discussed in terms of self organisation and a site selective growth mechanisms due to the free enegy of formation of each compound.

Surface analysis system by VUV photons-stimulated desorption

2010 ◽  
Author(s):  
Masahito Katto ◽  
Atushi Yokotani ◽  
Masanori Kaku ◽  
Shoichi Kubodera ◽  
Nobuyoshi Miyabayashi ◽  
...  
Keyword(s):  
Surface Analysis ◽  
Analysis System

Synthesis, Structural, Molecular Docking and Hirshfeld Surface Analysis of (2-((6-chloropyridin-3-yl)methoxy)-5 bromophenyl) (4-chlorophenyl) methanone

2018 ◽  
Vol 8 (2) ◽  
pp. 250-258
Author(s):  
B. N. Lakshminarayana ◽  
T. N. Mahadeva Prasad ◽  
N. R. Sreenatha ◽  
D. P. Ganesha ◽  
B. K. Manuprasad ◽  
...  
Keyword(s):  
Molecular Docking ◽  
Surface Analysis ◽  
Hirshfeld Surface ◽  
Hirshfeld Surface Analysis

scholarly journals Synthesis of N-CNT/TiO2 composites thin films: surface analysis and optoelectronic properties

2020 ◽  
Vol 183 ◽  
pp. 05002 ◽  
Author(s):  
Hamza Belkhanchi ◽  
Younes Ziat ◽  
Maryama Hammi ◽  
Charaf Laghlimi ◽  
Abdelaziz Moutcine ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Analysis ◽  
Sol Gel ◽  
Careful Analysis ◽  
Optoelectronic Properties ◽  
Spectroscopic Techniques ◽  
Large Area ◽  
Visible Absorption ◽  
Temperature Solution ◽  
Good Agreement

In this study, we have investigated the surface analysis and optoelectronic properties on the synthesis of N-CNT/TiO2 composites thin films, using sol gel method for a dye synthetized solar cell (DSSC) which is found to be simple and economical route. The titanium dioxide based solar cells are an exciting photovoltaic candidate; they are promising for the realization of large area devices. That can be synthetized by room temperature solution processing, with high photoactive performance. In the present work, we stated comparable efficiencies by directing our investigation on obtaining Sol Gel thin films based on N-CNT/TiO2, by dispersing nitrogen (N) doped carbon nanotubes (N-CNTs) powders in titanium tetraisopropoxyde (TTIP). The samples were assessed in terms of optical properties, using UV—visible absorption spectroscopic techniques. After careful analysis of the results, we have concluded that the mentioned route is good and more efficient in terms of optoelectronic properties. The gap of “the neat” 0.00w% N-CNT/TiO2 is of 3eV, which is in a good agreement with similar gap of semiconductors. The incorporated “w%NCNTs” led to diminishing the Eg with increasing N-CNTs amount. These consequences are very encouraging for optoelectronic field.

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