Low-temperature photoluminescence studies in epitaxially-grown GaAsN/InAs/GaAsN quantum-dot-in-well structures emitting at 1.31 μm

2017 ◽  
Author(s):  
A. Balgarkashi ◽  
M. Biswas ◽  
S. Singh ◽  
D. Das ◽  
N. Shinde ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Dot ◽  
Photoluminescence Studies ◽  
Low Temperature Photoluminescence

Low‐temperature photoluminescence studies of mercuric‐iodide photodetectors

1989 ◽  
Vol 66 (6) ◽  
pp. 2578-2584 ◽  
Author(s):  
R. B. James ◽  
X. J. Bao ◽  
T. E. Schlesinger ◽  
J. M. Markakis ◽  
A. Y. Cheng ◽  
...  
Keyword(s):  
Low Temperature ◽  
Mercuric Iodide ◽  
Photoluminescence Studies ◽  
Low Temperature Photoluminescence

Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy

2010 ◽  
Vol 645-648 ◽  
pp. 179-182 ◽  
Author(s):  
Georgios Zoulis ◽  
Jian Wu Sun ◽  
Milena Beshkova ◽  
Remigijus Vasiliauskas ◽  
Sandrine Juillaguet ◽  
...  
Keyword(s):  
Low Temperature ◽  
Mass Spectroscopy ◽  
Secondary Ion Mass Spectroscopy ◽  
Low Level ◽  
Residual N ◽  
Photoluminescence Studies ◽  
P Type ◽  
Secondary Ion ◽  
Low Temperature Photoluminescence

Both, n-type and p-type 3C-SiC samples grown on 6H-SiC substrates by sublimation epitaxy have been investigated. From low temperature photoluminescence studies, we demonstrate a low level of residual (n and/or p-type) doping with weak compensation, which is confirmed by secondary ion mass spectroscopy in the case of p-type samples.

PHOTOLUMINESCENCE STUDIES OF GaInArSb HIGHLY DOPED WITH TELLURIUM GROWN BY LIQUID PHASE EPITAXY ON (100) GaSb

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1645-1649
Author(s):  
J. DÍAZ-REYES ◽  
E. CORONA-ORGANICHE ◽  
J. L. HERRERA-PÉREZ ◽  
O. ZARATE-CORONA ◽  
J. MENDOZA-ALVAREZ
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
Electron Concentration ◽  
Liquid Phase Epitaxy ◽  
Epitaxial Layers ◽  
Pl Spectra ◽  
Photoluminescence Studies ◽  
Neutral Acceptor ◽  
Dominant Peak ◽  
Low Temperature Photoluminescence

Tellurium-doped GaInArSb epitaxial layers with electron concentration in the range of 3 × 1017 – 2 × 1020 cm -3 are grown at 530°C on (100) GaSb substares by liquid phase epitaxy (LPE). To dope the layers we used pellets of Sb 3 Te 2 in preparing growth melts. The low temperature photoluminescence (PL) spectra (20 K) showed a dominant peak composed of three transitions associated to excitons bound to residual acceptor impurities. For highly Te-doped layers the excitonic transitions related to exciton bound to neutral acceptor, BE 2, disappears.

Photoluminescence Studies of p-type GaN:Mg Co-doped with Oxygen

2000 ◽  
Vol 639 ◽  
Author(s):  
R. Y. Korotkov ◽  
J. M. Gregie ◽  
B. W. Wessels
Keyword(s):  
Low Temperature ◽  
Integrated Intensity ◽  
Donor Acceptor ◽  
Photoluminescence Studies ◽  
P Type ◽  
Formation Energies ◽  
Different Origin ◽  
Co Doped ◽  
Low Temperature Photoluminescence ◽  
Mg Doped

ABSTRACTThe low temperature photoluminescence (PL) of Mg-doped GaN co-doped with oxygen is investigated. Two PL bands are observed at low temperature at 2.5 and 2.8 eV in the p-type oxygen co-doped samples. Both the 2.5 eV and 2.8 eV bands are attributed to donor-acceptor (DA) transitions involving deep donors of different origin and a shallow MgGa acceptor. The integrated intensity of the 2.8 eV band in p-type GaN decreases as the oxygen partial pressure is increased. The decrease is attributed to reduced compensation by deep native donors. The two bands are not formed in n-type (n > 1019 cm−3) GaN:Mg over-doped with oxygen indicating that the deep donors responsible for these transitions have high formation energies in n-type material.

LOW TEMPERATURE PHOTOLUMINESCENCE AND ABSORPTION OF GaxIn1-xAs/ InP

1982 ◽  
Vol 43 (C5) ◽  
pp. C5-383-C5-392 ◽  
Author(s):  
K. H. Goetz ◽  
A. V. Solomonov ◽  
D. Bimberg ◽  
H. Jürgensen ◽  
M. Razeghi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Low Temperature Photoluminescence
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