Low‐temperature photoluminescence studies of mercuric‐iodide photodetectors

1989 ◽  
Vol 66 (6) ◽  
pp. 2578-2584 ◽  
Author(s):  
R. B. James ◽  
X. J. Bao ◽  
T. E. Schlesinger ◽  
J. M. Markakis ◽  
A. Y. Cheng ◽  
...  
Keyword(s):  
Low Temperature ◽  
Mercuric Iodide ◽  
Photoluminescence Studies ◽  
Low Temperature Photoluminescence

Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy

2010 ◽  
Vol 645-648 ◽  
pp. 179-182 ◽  
Author(s):  
Georgios Zoulis ◽  
Jian Wu Sun ◽  
Milena Beshkova ◽  
Remigijus Vasiliauskas ◽  
Sandrine Juillaguet ◽  
...  
Keyword(s):  
Low Temperature ◽  
Mass Spectroscopy ◽  
Secondary Ion Mass Spectroscopy ◽  
Low Level ◽  
Residual N ◽  
Photoluminescence Studies ◽  
P Type ◽  
Secondary Ion ◽  
Low Temperature Photoluminescence

Both, n-type and p-type 3C-SiC samples grown on 6H-SiC substrates by sublimation epitaxy have been investigated. From low temperature photoluminescence studies, we demonstrate a low level of residual (n and/or p-type) doping with weak compensation, which is confirmed by secondary ion mass spectroscopy in the case of p-type samples.

Study of stoichiometry in mercuric iodide by low-temperature photoluminescence spectroscopy

1993 ◽  
Author(s):  
Xue J. Bao ◽  
Ralph B. James ◽  
C.-Y. Hung ◽  
Tuviah E. Schlesinger ◽  
A. Y. Cheng ◽  
...  
Keyword(s):  
Low Temperature ◽  
Photoluminescence Spectroscopy ◽  
Mercuric Iodide ◽  
Low Temperature Photoluminescence

Optical, Electrical and Surface Characterization of Mercuric Iodide Platelets Grown in the HgI 2-HI-H2O System

1997 ◽  
Vol 487 ◽  
Author(s):  
L. Fornaro ◽  
H. Chen ◽  
K. Chattopadhyay ◽  
K.-T Chen ◽  
A. Burger
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Apparent Resistivity ◽  
Surface Characterization ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Mercuric Iodide ◽  
Photoluminescence Properties ◽  
Low Temperature Photoluminescence

AbstractThe optical, electrical and surface properties of mercuric iodide platelets grown from solution in a HgI2-HI-H2O system were investigated by comparing them with Physical Vapor Transport (PVT) grown crystals. The absence of bulk imperfections and the uniformity of the as-grown surfaces and the KI solution etched surfaces were confirmed by optical microscopy. The as-grown surface uniformity is higher for solution grown crystals than that of PVT crystals, since the platelets do not have to be cleaved or polished. AFM studies show that the roughness for the cleaved, aged and etched surfaces were 0.06 nm, 0.48 nm and 0.3 nm respectively. Low temperature photoluminescence properties were measured for the two kind of crystals and will be discussed. However, I-V curves give higher current density and lower apparent resistivity values for the solution grown than for PVT grown crystals. Correlations between optical and surface quality as well as the electrical properties of the crystals grown from both solution and PVT methods are also discussed.

PHOTOLUMINESCENCE STUDIES OF GaInArSb HIGHLY DOPED WITH TELLURIUM GROWN BY LIQUID PHASE EPITAXY ON (100) GaSb

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1645-1649
Author(s):  
J. DÍAZ-REYES ◽  
E. CORONA-ORGANICHE ◽  
J. L. HERRERA-PÉREZ ◽  
O. ZARATE-CORONA ◽  
J. MENDOZA-ALVAREZ
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
Electron Concentration ◽  
Liquid Phase Epitaxy ◽  
Epitaxial Layers ◽  
Pl Spectra ◽  
Photoluminescence Studies ◽  
Neutral Acceptor ◽  
Dominant Peak ◽  
Low Temperature Photoluminescence

Tellurium-doped GaInArSb epitaxial layers with electron concentration in the range of 3 × 1017 – 2 × 1020 cm -3 are grown at 530°C on (100) GaSb substares by liquid phase epitaxy (LPE). To dope the layers we used pellets of Sb 3 Te 2 in preparing growth melts. The low temperature photoluminescence (PL) spectra (20 K) showed a dominant peak composed of three transitions associated to excitons bound to residual acceptor impurities. For highly Te-doped layers the excitonic transitions related to exciton bound to neutral acceptor, BE 2, disappears.

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