The influence of relative humidity on the scattered light signal of aerosol concentration measurement system

2016 ◽  
Author(s):  
Fang Gu ◽  
Jiahong Zhang ◽  
Yunyun Chen ◽  
Fengpin Cui ◽  
Yi Liu ◽  
...  
Keyword(s):  
Relative Humidity ◽  
Measurement System ◽  
Scattered Light ◽  
Light Signal ◽  
Aerosol Concentration ◽  
Concentration Measurement

Research on Environment Materials with NDIR NO2 Concentration Measurement by Soot Position Influence

2014 ◽  
Vol 540 ◽  
pp. 255-258
Author(s):  
Yan Jun Zhao ◽  
Cheng Bin Gao ◽  
Bin Qu
Keyword(s):  
Light Intensity ◽  
Measurement System ◽  
Solution Method ◽  
Daily Life ◽  
Measurement Methods ◽  
Concentration Measurement ◽  
Infrared Light ◽  
Gaseous Pollutants ◽  
Actual Concentration ◽  
Simulation Results

Environment materials play important role in our daily life. It includes so many types. NO2 is one of the most important gaseous pollutants and NO2 concentration measurement system is one part of the CEMS system. There have many NO2 concentration measurement methods and NDIR is used commonly. The received angle of the measurement light is gradually decreases while the distance between soot and the receiver becomes larger; so the true infrared light intensity is smaller than the theoretical infrared light intensity and NO2 concentration is less than the actual concentration. To reduce the soot position influence, soot position influence on NO2 concentration measurement using NDIR is studied. The influence of the different soot position is analyzed. The simulation results show that the different soot position can influent the NO2 concentration accuracy. The solution method on decreasing the soot poison influence is brought out and can improve the NO2 concentration accuracy.

Real-Time in Situ Monitoring of Defect Evolution at Widegap II-VI/GaAs Heterointerfaces during Epitaxial Growth

1993 ◽  
Vol 324 ◽  
Author(s):  
C.M. Rouleau ◽  
R.M. Park
Keyword(s):  
Epitaxial Growth ◽  
Real Time ◽  
Laser Light ◽  
Scattered Light ◽  
Normal Incidence ◽  
Light Signal ◽  
In Situ Monitoring ◽  
Laser Probe ◽  
Dislocation Formation

AbstractWe report the real-time in situ observation of heterointerface dislocation formation during the growth of lattice-mismatched widegap II-VI/GaAs heterostructures. Such observations were made by employing a near-normal incidence HeNe laser probe during epitaxial growth which generated both a laser reflection interferometry (LRI) signal as well as an elastically scattered laser light (ELLS) signal. We believe that the scattered light signal is generated at the II-VI/GaAs heterointerface based on the observation of a π phase difference between the LRI and the ELLS signals which were monitored simultaneously. We suggest, therefore, that the observed ELLS signal is a consequence of dislocation formation at the heterointerface which occurs due to plastic deformation in lattice-mismatched systems.

Sign in / Sign up

Export Citation Format

Share Document