Selective switching: an enabling technology for high-performance ATM switch fabric

1995 ◽  
Author(s):  
Steven H. Ho ◽  
Steve M. Kang
2004 ◽  
Vol 814 ◽  
Author(s):  
G. Nisato ◽  
C. Mutsaers ◽  
H. Buijk ◽  
P. Duineveld ◽  
E. Janssen ◽  
...  

AbstractFlexible, free shape displays are the enabling technology for new robust, lightweight, extremely thin, portable electronic devices. Polymer Light Emitting Diodes (PLED) are especially suited for these applications, due to their fast response time, low voltage, high luminous efficiency and viewing angle performance. On the other hand, PLED displays are extremely sensitive to moisture and oxygen. Substrate materials provided with high performance hermetic and conducting layers are therefore an essential component for manufacturing these flexible devices. Polymer based substrates provide the necessary mechanical flexibility; they also require several thin, brittle, functional inorganic layers such diffusion barriers and transparent electrodes. The structural integrity, dimensional stability and thermal properties of the substrate stack are crucial to insure device functionality and reliability. For polymer-based substrate several effects lead to dimensional variation of the substrates, such as solvent uptake, physical ageing of the polymer base, thermal expansion and stress induced deformations. These effects must be taken into account to successfully perform classic photolithographic steps.Ink-jet printing is a critical enabling technology for flexible PLED displays, providing a customizable means to dispense solution-based polymers onto a flexible substrate, allowing for multi-color devices. On the other hand, IJP must meet several challenges, especially to comply with industrial applications. For example, accurate landing position of the droplets to form homogeneous hole-transport and electroluminescent layers as well as good wetting characteristic of the substrates must be obtained with reliable high throughput techniques.


1996 ◽  
Vol 421 ◽  
Author(s):  
J. C. Zolper ◽  
A. G. Baca ◽  
M. E. Sherwin ◽  
J. F. Klem

AbstractIon implantation has been an enabling technology for the realization of many high performance electronic devices in III-V semiconductor materials. We report on advances in ion implantation processing technology for application to GaAs JFETs, AlGaAs/GaAs HFETs, and InGaP or InA1P-barrier HFETs. In particular, the GaAs JFET has required the development of shallow p-type implants using Zn or Cd with junction depths down to 35 nm after the activation anneal. Implant activation and ionization issues for AlGaAs will be reported along with those for InGaP and InAlP. A comprehensive treatment of Si-implant doping of AlGaAs is given based on the donor ionization energies and conduction band density-of-states dependence on Al-composition. Si and Si+P implants in InGaP are shown to achieve higher electron concentrations than for similar implants in AlGaAs due to the absence of the deep donor (DX) level. An optimized P co-implantation scheme in InGaP is shown to increase the implanted donor saturation level by 65%.


Author(s):  
Paul Paret ◽  
Joshua Major ◽  
Douglas DeVoto ◽  
Sreekant Narumanchi ◽  
Yansong Tan ◽  
...  

Sintered silver-based bonded interfaces are a critical enabling technology for high-temperature, compact, high-performance, and reliable wide-bandgap packages and components. High-pressure (∼40 MPa) sintered silver interfaces have been implemented commercially, most notably the commercial products offered by Semikron. To reduce manufacturing complexity, there is significant industry interest in pressure-less sintered silver interfaces. To this end, current formulations of sintered silver paste are comprised of purely nano-sized silver particles or a combination of nano- and micro-sized silver particles/flakes. It is essential to quantify the mechanical properties and determine the reliability of these interfaces prior to use in automotive power electronics applications. In this paper, research efforts at the National Renewable Energy Laboratory, in collaboration with Virginia Polytechnic Institute and State University and an industry partner, in optimizing the synthesis procedure and mechanical characterization of sintered silver double-lap samples are described. These double-lap samples were synthesized using pressure-less sintering techniques. Shear testing was conducted at multiple temperatures and displacement rates on these samples sintered using two types of sintered sintered silver pastes, one of them consisting of nano-silver particles and the other a hybrid paste or a combination of nano- and micron-sized silver flakes, employed in a double-lap configuration. Maximum values of shear stress obtained from the characterization study are reported.


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