Memory devices based on self-assembled materials and processes (Conference Presentation)

2016 ◽  
Author(s):  
Jang-Sik Lee
Keyword(s):  
Memory Devices ◽  
Self Assembled

Electrical Characterization of Mos Memory Devices with Self-Assembled Tungsten Nano-Dots Dispersed in Silicon Nitride

2019 ◽  
Vol 18 (1) ◽  
pp. 33-37
Author(s):  
Yanli Pei ◽  
Chengkuan Yin ◽  
Masahiko Nishijima ◽  
Toshiya Kojima ◽  
Hiroshi Noriha ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Electrical Characterization ◽  
Memory Devices ◽  
Self Assembled

Molecular Memory Based on Nanowire–Molecular Wire Heterostructures

2007 ◽  
Vol 7 (1) ◽  
pp. 138-150 ◽  
Author(s):  
Chao Li ◽  
Bo Lei ◽  
Wendy Fan ◽  
Daihua Zhang ◽  
M. Meyyappan ◽  
...  
Keyword(s):  
Building Blocks ◽  
Molecular Wires ◽  
Charge Storage ◽  
Memory Devices ◽  
Molecular Wire ◽  
Molecular Memory ◽  
Nanoscale Device ◽  
Self Assembled ◽  
Novel Concept ◽  
Beyond Cmos

This article reviews the recent research of molecular memory based on self-assembled nanowire–molecular wire heterostructures. These devices exploit a novel concept of using redox-active molecules as charge storage flash nodes for nanowire transistors, and thus boast many advantages such as room-temperature processing and nanoscale device area. Various key elements of this technology will be reviewed, including the synthesis of the nanowires and molecular wires, and fabrication and characterization of the molecular memory devices. In particular, multilevel memory has been demonstrated using In2O3 nanowires with self-assembled Fe-bis(terpyridine) molecules, which serve to multiple the charge storage density without increasing the device size. Furthermore, in-depth studies on memory devices made with different molecules or with different functionalization techniques will be reviewed and analyzed. These devices represent a conceptual breakthrough in molecular memory and may work as building blocks for future beyond-CMOS nanoelectronic circuits.

Nonvolatile memories using the electrets of conjugated rod-coil block copolymer and its nanocomposite with single wall carbon nanotubes

2015 ◽  
Vol 3 (3) ◽  
pp. 551-558 ◽  
Author(s):  
Yu-Cheng Chiu ◽  
Chien-Chung Shih ◽  
Wen-Chang Chen
Keyword(s):  
Carbon Nanotubes ◽  
Block Copolymer ◽  
High Performance ◽  
Single Wall Carbon Nanotubes ◽  
Charge Storage ◽  
Memory Devices ◽  
Single Wall Carbon ◽  
Nonvolatile Memories ◽  
Self Assembled

Self-assembled conjugated rod-coil block copolymer and its nanocomposites with SWCNT could be used as the charge storage layer for high-performance OFET memory devices.

Self-assembled oligosaccharide-based block copolymers as charge-storage materials for memory devices

2018 ◽  
Vol 50 (8) ◽  
pp. 649-658 ◽  
Author(s):  
Ai-Nhan Au-Duong ◽  
Chi-Ching Kuo ◽  
Yu-Cheng Chiu
Keyword(s):  
Block Copolymers ◽  
Charge Storage ◽  
Memory Devices ◽  
Storage Materials ◽  
Self Assembled
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