Self-Assembled Naphthalimide Nanoparticles for Nonvolatile ReRAM Devices: An Efficient Approach toward High Performance Solution-Processed and All-Organic Two-Terminal Resistive Memory Devices

2019 ◽  
Vol 1 (11) ◽  
pp. 2437-2444
Author(s):  
Rahul Narasimhan Arunagirinathan ◽  
Niranjan Meher ◽  
Parameswar Krishnan Iyer
Keyword(s):  
High Performance ◽  
Memory Devices ◽  
Resistive Memory ◽  
Solution Processed ◽  
Efficient Approach ◽  
Self Assembled

A solution processed metal–oxo cluster for rewritable resistive memory devices

2019 ◽  
Vol 7 (4) ◽  
pp. 843-852 ◽  
Author(s):  
Kui Zhou ◽  
Guanglong Ding ◽  
Chen Zhang ◽  
Ziyu Lv ◽  
Shenghuang Luo ◽  
...  
Keyword(s):  
Activation Energy ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Solution Processed ◽  
Switching Behaviour

A memory device based on metal–oxo cluster-assembled materials demonstrates a redox-based resistive switching behaviour which is correlated with the migration of hydroxide ions with low activation energy.

ChemInform Abstract: Non-volatile Resistive Memory Devices Based on Solution-Processed Ultrathin Two-Dimensional Nanomaterials

ChemInform ◽  
2015 ◽  
Vol 46 (27) ◽  
pp. no-no
Author(s):  
Chaoliang Tan ◽  
Zhengdong Liu ◽  
Wei Huang ◽  
Hua Zhang
Keyword(s):  
Memory Devices ◽  
Two Dimensional ◽  
Resistive Memory ◽  
Solution Processed

High-performance flexible resistive memory devices based on Al2O3:GeOx composite

2018 ◽  
Vol 117 ◽  
pp. 298-304 ◽  
Author(s):  
Bhagaban Behera ◽  
Sarmistha Maity ◽  
Ajit K. Katiyar ◽  
Samaresh Das
Keyword(s):  
High Performance ◽  
Memory Devices ◽  
Resistive Memory

Uniform and electroforming-free resistive memory devices based on solution-processed triple-layered NiO/Al2O3 thin films

2019 ◽  
Vol 125 (9) ◽  
Author(s):  
Xiao Lin Wang ◽  
Chao Wen ◽  
Yuan Liu ◽  
T. P. Chen ◽  
Hai Yan Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Memory Devices ◽  
Resistive Memory ◽  
Solution Processed

Manipulation of Push-Pull System by Functionalization of Porphyrin at β-Position for High-Performance Solution-Processable Ternary Resistive Memory Devices

ChemNanoMat ◽  
2017 ◽  
Vol 3 (3) ◽  
pp. 164-167 ◽  
Author(s):  
Hing Chan ◽  
Sai-Ho Lee ◽  
Chun-Ting Poon ◽  
Maggie Ng ◽  
Vivian Wing-Wah Yam
Keyword(s):  
High Performance ◽  
Memory Devices ◽  
Resistive Memory ◽  
Pull System ◽  
Solution Processable

Self-Assembled Organic Single Crystalline Nanosheet for Solution Processed High-Performance n-Channel Field-Effect Transistors

2016 ◽  
Vol 28 (28) ◽  
pp. 6011-6015 ◽  
Author(s):  
Jin Hong Kim ◽  
Sang Kyu Park ◽  
Jong H. Kim ◽  
Dong Ryeol Whang ◽  
Won Sik Yoon ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Solution Processed ◽  
Single Crystalline ◽  
Self Assembled

Nonvolatile memories using the electrets of conjugated rod-coil block copolymer and its nanocomposite with single wall carbon nanotubes

2015 ◽  
Vol 3 (3) ◽  
pp. 551-558 ◽  
Author(s):  
Yu-Cheng Chiu ◽  
Chien-Chung Shih ◽  
Wen-Chang Chen
Keyword(s):  
Carbon Nanotubes ◽  
Block Copolymer ◽  
High Performance ◽  
Single Wall Carbon Nanotubes ◽  
Charge Storage ◽  
Memory Devices ◽  
Single Wall Carbon ◽  
Nonvolatile Memories ◽  
Self Assembled

Self-assembled conjugated rod-coil block copolymer and its nanocomposites with SWCNT could be used as the charge storage layer for high-performance OFET memory devices.

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