Investigation of graphene applied on near infrared photodetector (Conference Presentation)

2016 ◽  
Author(s):  
I-Chun Lien ◽  
Sheng-Hui Chen
Keyword(s):  
Near Infrared ◽  
Infrared Photodetector

Passively Q-switched operation based on Sb2Se3 and self-power near infrared photodetector

2021 ◽  
pp. 118704
Author(s):  
Lijun Yu ◽  
Benhai Wang ◽  
Haobin Han ◽  
Chaoqing Dai ◽  
Wei Liu ◽  
...  
Keyword(s):  
Near Infrared ◽  
Infrared Photodetector

scholarly journals Rhenium Diselenide (ReSe 2 ) Near‐Infrared Photodetector: Performance Enhancement by Selective p‐Doping Technique

2019 ◽  
Vol 6 (21) ◽  
pp. 1901255 ◽  
Author(s):  
Jinok Kim ◽  
Keun Heo ◽  
Dong‐Ho Kang ◽  
Changhwan Shin ◽  
Sungjoo Lee ◽  
...  
Keyword(s):  
Near Infrared ◽  
Performance Enhancement ◽  
Infrared Photodetector ◽  
Doping Technique ◽  
Rhenium Diselenide

Solution processed Cu2S/TiO2 heterojunction for visible-near infrared photodetector

2020 ◽  
Vol 710 ◽  
pp. 138275
Author(s):  
Satya Veer Singh ◽  
Anand Sharma ◽  
Sajal Biring ◽  
Bhola N. Pal
Keyword(s):  
Near Infrared ◽  
Infrared Photodetector ◽  
Solution Processed

Visible-to-near-infrared photodetector based on graphene–MoTe 2 –graphere heterostructure

2019 ◽  
Vol 28 (11) ◽  
pp. 117802
Author(s):  
Rui-Xue Hu ◽  
Xin-Li Ma ◽  
Chun-Ha An ◽  
Jing Liu
Keyword(s):  
Near Infrared ◽  
Infrared Photodetector

High performance near infrared photodetector based on in-plane black phosphorus p-n homojunction

Nano Energy ◽  
2020 ◽  
Vol 70 ◽  
pp. 104518 ◽  
Author(s):  
Yijun Xu ◽  
Changlong Liu ◽  
Cheng Guo ◽  
Qiang Yu ◽  
Wanlong Guo ◽  
...  
Keyword(s):  
High Performance ◽  
Near Infrared ◽  
Black Phosphorus ◽  
Infrared Photodetector

High-performance WO3−x-WSe2/SiO2/n-Si heterojunction near-infrared photodetector via a homo-doping strategy

2018 ◽  
Vol 6 (21) ◽  
pp. 5821-5829 ◽  
Author(s):  
Tianchao Guo ◽  
Cuicui Ling ◽  
Teng Zhang ◽  
Hui Li ◽  
Xiaofang Li ◽  
...  
Keyword(s):  
Barrier Height ◽  
Dark Current ◽  
High Performance ◽  
Near Infrared ◽  
Infrared Photodetector ◽  
Interface Barrier

The enhanced performance of WO3−x-WSe2/SiO2/n-Si can be mainly attributed to the down-shift of the EF of WO3−x-WSe2, which results in a larger interface barrier height and a greatly reduced dark current.

A study of n-doping in self-catalyzed GaAsSb nanowires using GaTe dopant source and ensemble nanowire near-infrared photodetector

2020 ◽  
Vol 31 (50) ◽  
pp. 505203 ◽  
Author(s):  
Shisir Devkota ◽  
Mehul Parakh ◽  
Sean Johnson ◽  
Priyanka Ramaswamy ◽  
Michael Lowe ◽  
...  
Keyword(s):  
Near Infrared ◽  
Infrared Photodetector ◽  
N Doping ◽  
Dopant Source
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