Minority‐carrier lifetimes and internal quantum efficiency of surface‐free GaAs

1978 ◽  
Vol 49 (12) ◽  
pp. 6103-6108 ◽  
Author(s):  
R. J. Nelson ◽  
R. G. Sobers
Keyword(s):  
Quantum Efficiency ◽  
Minority Carrier ◽  
Internal Quantum Efficiency ◽  
Carrier Lifetimes ◽  
Minority Carrier Lifetimes

InSb: A Key Material for IR Detector Applications

1986 ◽  
Vol 90 ◽  
Author(s):  
S. R. Jost ◽  
V. F. Meikleham ◽  
T. H. Myers
Keyword(s):  
Minority Carrier ◽  
Bulk Material ◽  
Device Performance ◽  
Injection Device ◽  
Ir Detector ◽  
Material Parameters ◽  
Carrier Lifetimes ◽  
Minority Carrier Lifetimes ◽  
Growth Technology ◽  
Device Technology

ABSTRACTInSb has served as an important mid-wave IR (λ=3−5μm) detector material for several decades. In this presentation, we will briefly review General Electric's InSb Charge Injection Device technology. Emphasis will be placed on device performance as a function of material parameters. A new InSb materials technology utilizing liquid phase epitaxy will be described. This epitaxial growth technology improves InSb material parameters and increases minority carrier lifetimes by more than two orders of magnitude to near the Auger limit. Comparisons will be made between available bulk material parameters and that of the epitaxial material.

Optimization of the Specific On-Resistance of 4H-SiC BJTs

2006 ◽  
Vol 527-529 ◽  
pp. 1429-1432 ◽  
Author(s):  
S. Balachandran ◽  
T. Paul Chow ◽  
Anant K. Agarwal
Keyword(s):  
High Voltage ◽  
Minority Carrier ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Bipolar Junction Transistors ◽  
Carrier Lifetimes ◽  
Minority Carrier Lifetimes ◽  
Recombination Velocity ◽  
The Impact

We evaluate the performance capabilities and limitations of high voltage 4H-SiC based Bipolar Junction Transistors (BJTs). Experimental forward characteristics of a 4kV BJT are studied and simulations are employed to determine the factors behind the higher than expected specific onresistance (Ron,sp) for the device. The impact of material (minority carrier lifetimes), processing (surface recombination velocity) and design (p contact spacing from the emitter mesa) parameters on the forward active performance of this device are discussed and ways to lower Ron,sp, below the unipolar level, and increase the gain (β) are examined.

Temperature Dependence of Minority Carrier Lifetimes in a-Si:H

1996 ◽  
Vol 420 ◽  
Author(s):  
J. C. L. Cornish ◽  
Subaer ◽  
P. Jennings ◽  
G. T. Hefter
Keyword(s):  
Minority Carrier ◽  
Red Light ◽  
Open Circuit ◽  
Xenon Lamp ◽  
Carrier Lifetimes ◽  
Minority Carrier Lifetimes ◽  
Higher Temperature ◽  
Straight Lines ◽  
Deposited Films ◽  
Trap Activation

AbstractChanges in minority carrier lifetimes in a-Si:H, p-i-n photovoltaic cells due to light soaking have been investigated using the open circuit voltage decay (OCVD) method over the temperature range 223 K to 296 K.Using light from a Xenon flash lamp for excitation produced unexpected results: in the light soaked material, band-to-band transitions were evident at a higher temperature than for the asdeposited samples and became increasingly pronounced as the temperature was reduced. Results obtained using red light at 670 nm from a pulsed diode laser to produce relatively uniform- illumination throughout the thickness of the film, however, produced results very similar to those obtained for as-deposited films.Plots of the reciprocal of the trap activation time versus 1000/T for the results for both xenon lamp and laser excitation can be fitted by straight lines. Two distinct sets of lines with activation energies in the ranges 0.07 to 0.20 eV and 0.38 to 0.51 eV are obtained with the activation energy and the exponential prefactors exhibiting a Meyer-Neldel relationship.

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