Extreme ultraviolet patterned mask inspection performance of advanced projection electron microscope system for 11nm half-pitch generation

2016 ◽  
Author(s):  
Ryoichi Hirano ◽  
Susumu Iida ◽  
Tsuyoshi Amano ◽  
Hidehiro Watanabe ◽  
Masahiro Hatakeyama ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Extreme Ultraviolet ◽  
Mask Inspection ◽  
Inspection Performance

Patterned mask inspection technology with projection electron microscope technique on extreme ultraviolet masks

2014 ◽  
Vol 13 (1) ◽  
pp. 013009 ◽  
Author(s):  
Ryoichi Hirano ◽  
Susumu Iida ◽  
Tsuyoshi Amano ◽  
Tsuneo Terasawa ◽  
Hidehiro Watanabe ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Extreme Ultraviolet ◽  
Microscope Technique ◽  
Mask Inspection

EUV patterned mask inspection performance of an advanced projection electron microscope (PEM) system for hp 16 nm and beyond

2014 ◽  
Author(s):  
Ryoichi Hirano ◽  
Susumu Iida ◽  
Tsuyoshi Amano ◽  
Tsueno Terasawa ◽  
Hidehiro Watanabe ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Mask Inspection ◽  
Inspection Performance

Plasma-based sources of extreme ultraviolet radiation for lithography and mask inspection

2018 ◽  
Vol 189 (03) ◽  
pp. 323-334 ◽  
Author(s):  
D.B. Abramenko ◽  
P.S. Antsiferov ◽  
D.I. Astakhov ◽  
Aleksandr Yu. Vinokhodov ◽  
Il'ya Yu. Vichev ◽  
...  
Keyword(s):  
Ultraviolet Radiation ◽  
Extreme Ultraviolet ◽  
Mask Inspection ◽  
Extreme Ultraviolet Radiation

Development of element technologies for EUVL

2015 ◽  
Vol 4 (4) ◽  
Author(s):  
Hiroo Kinoshita ◽  
Takeo Watanabe ◽  
Tetsuo Harada
Keyword(s):  
Extreme Ultraviolet ◽  
Random Access ◽  
High Volume ◽  
Development Stage ◽  
Extreme Ultraviolet Lithography ◽  
Applied Physics ◽  
Reflectivity Measurement ◽  
Ultraviolet Lithography ◽  
Mask Inspection ◽  
The University

AbstractThirty years have passed since the first report on extreme ultraviolet lithography (EUVL) was presented at the annual meeting of the Japanese Society of Applied Physics in 1986. This technology is now in the manufacturing development stage. The high-volume manufacturing of dynamic-random-access-memory (DRAM) chips with a line width of 15 nm is expected in 2016. However, there are critical development issues that remain: generating a stand-alone EUV source with a higher power and producing a mask inspection tool for obtaining zero-defect masks. The Center for EUVL at the University of Hyogo was established in 2010. At present, it utilizes various types of equipment, such as an EUV mask defect inspection tool, an interference-lithography system, a device for measuring the thickness of carbon contamination film deposited by resist outgassing, and reflectivity measurement systems.

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