Fully transparent thin film transistors based on zinc oxide channel layer and molybdenum doped indium oxide electrodes

2016 ◽  
Author(s):  
Mateusz Mądzik ◽  
Elangovan Elamurugu ◽  
Jaime Viegas
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
Channel Layer ◽  
Oxide Electrodes

Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application

Nanoscale ◽  
2021 ◽  
Author(s):  
Keonwon Beom ◽  
Jimin Han ◽  
Hyun-Mi Kim ◽  
Tae-Sik Yoon
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Synaptic Weight ◽  
Drain Current ◽  
Gate Insulator ◽  
Channel Layer ◽  
Indium Zinc Oxide ◽  
Wide Range

Wide range synaptic weight modulation with a tunable drain current was demonstrated in thin-film transistors (TFTs) with a hafnium oxide (HfO2−x) gate insulator and an indium-zinc oxide (IZO) channel layer...

Optimization of the Solution-Based Indium-Zinc Oxide/Zinc-Tin Oxide Channel Layer for Thin-Film Transistors

2018 ◽  
Vol 18 (9) ◽  
pp. 5913-5918 ◽  
Author(s):  
Kiwon Lim ◽  
Pyungho Choi ◽  
Sangsub Kim ◽  
Hyunki Kim ◽  
Minsoo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Channel Layer ◽  
Indium Zinc Oxide ◽  
Zinc Tin Oxide

scholarly journals High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al2O3 Gate Dielectric

Materials ◽  
2019 ◽  
Vol 12 (6) ◽  
pp. 852 ◽  
Author(s):  
Seungbeom Choi ◽  
Kyung-Tae Kim ◽  
Sung Park ◽  
Yong-Hoon Kim
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Linear Type ◽  
Channel Layer ◽  
Indium Gallium

In this paper, we demonstrate high-mobility inkjet-printed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) using a solution-processed Sr-doped Al2O3 (SAO) gate dielectric. Particularly, to enhance to the electrical properties of inkjet-printed IGZO TFTs, a linear-type printing pattern was adopted for printing the IGZO channel layer. Compared to dot array printing patterns (4 × 4 and 5 × 5 dot arrays), the linear-type pattern resulted in the formation of a relatively thin and uniform IGZO channel layer. Also, to improve the subthreshold characteristics and low-voltage operation of the device, a high-k and thin (~10 nm) SAO film was used as the gate dielectric layer. Compared to the devices with SiO2 gate dielectric, the inkjet-printed IGZO TFTs with SAO gate dielectric exhibited substantially high field-effect mobility (30.7 cm2/Vs). Moreover, the subthreshold slope and total trap density of states were also significantly reduced to 0.14 V/decade and 8.4 × 1011/cm2·eV, respectively.

scholarly journals Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure

Materials ◽  
2019 ◽  
Vol 12 (21) ◽  
pp. 3639 ◽  
Author(s):  
Cheng-Jyun Wang ◽  
Hsin-Chiang You ◽  
Kuan Lin ◽  
Jen-Hung Ou ◽  
Keng-Hsien Chao ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Visible Light ◽  
Surface Plasmon ◽  
Thin Film Transistors ◽  
Lower Surface ◽  
Electrical Signal ◽  
Oxide Thin Film ◽  
Localized Surface Plasmon ◽  
Channel Layer

Highly transparent zinc oxide (ZnO)-based thin-film transistors (TFTs) with gold nanoparticles (AuNPs) capable of detecting visible light were fabricated through spray pyrolysis on a fluorine-doped tin oxide substrate. The spray-deposited channel layer of ZnO had a thickness of approximately 15 nm, and the thickness exhibited a linear increase with an increasing number of sprays. Furthermore, the ZnO thin-film exhibited a markedly smoother channel layer with a significantly lower surface roughness of 1.84 nm when the substrate was 20 cm from the spray nozzle compared with when it was 10 cm away. Finally, a ZnO and Au-NP heterojunction nanohybrid structure using plasmonic energy detection as an electrical signal, constitutes an ideal combination for a visible-light photodetector. The ZnO-based TFTs convert localized surface plasmon energy into an electrical signal, thereby extending the wide band-gap of materials used for photodetectors to achieve visible-light wavelength detection. The photo-transistors demonstrate an elevated on-current with an increase of the AuNP density in the concentration of 1.26, 12.6, and 126 pM and reach values of 3.75, 5.18, and 9.79 × 10−7 A with applied gate and drain voltages. Moreover, the threshold voltage (Vth) also drifts to negative values as the AuNP density increases.

High-mobility flexible thin-film transistors with a low-temperature zirconium-doped indium oxide channel layer

2016 ◽  
Vol 10 (6) ◽  
pp. 493-497 ◽  
Author(s):  
Peng Xiao ◽  
Ting Dong ◽  
Linfeng Lan ◽  
Zhenguo Lin ◽  
Wei Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Channel Layer

Charge Transport in Low-Temperature Processed Thin-Film Transistors Based on Indium Oxide/Zinc Oxide Heterostructures

2018 ◽  
Vol 10 (24) ◽  
pp. 20661-20671 ◽  
Author(s):  
Jan Krausmann ◽  
Shawn Sanctis ◽  
Jörg Engstler ◽  
Martina Luysberg ◽  
Michael Bruns ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Temperature ◽  
Charge Transport ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
Oxide Heterostructures

Effect of Channel Layer Thickness on Characteristics and Stability of Amorphous Hafnium–Indium–Zinc Oxide Thin Film Transistors

2011 ◽  
Vol 50 (2R) ◽  
pp. 024104 ◽  
Author(s):  
Sun-Jae Kim ◽  
Soo-Yeon Lee ◽  
Young-Wook Lee ◽  
Woo-Geun Lee ◽  
Kap-Soo Yoon ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Layer Thickness ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Channel Layer ◽  
Indium Zinc Oxide

Effects of Channel Layer Thickness on Characteristics of Flexible Nickel-Doped Zinc Oxide Thin-Film Transistors

2017 ◽  
Vol 64 (5) ◽  
pp. 1997-2000 ◽  
Author(s):  
Dedong Han ◽  
Lingling Huang ◽  
Wen Yu ◽  
Yingying Cong ◽  
Junchen Dong ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Layer Thickness ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Channel Layer

Transparent thin-film transistors with zinc indium oxide channel layer

2005 ◽  
Vol 97 (6) ◽  
pp. 064505 ◽  
Author(s):  
N. L. Dehuff ◽  
E. S. Kettenring ◽  
D. Hong ◽  
H. Q. Chiang ◽  
J. F. Wager ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
Channel Layer ◽  
Zinc Indium Oxide

scholarly journals Effects of annealing temperature on properties of InSnZnO thin film transistors prepared by Co-sputtering

RSC Advances ◽  
2018 ◽  
Vol 8 (61) ◽  
pp. 34817-34822 ◽  
Author(s):  
Wei Zhong ◽  
Guoyuan Li ◽  
Linfeng Lan ◽  
Bin Li ◽  
Rongsheng Chen
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Annealing Temperature ◽  
Channel Layer ◽  
Bottom Gate

Indium-tin-zinc-oxide (ITZO) as the channel layer grown by co-sputtering of ZnO target and ITO target in the bottom gate thin-film transistors (TFTs) is proposed in this work.

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