Approaches to highly efficient UV emitters based on AlGaN quantum wells

2016 ◽  
Author(s):  
Shuhei Ichikawa ◽  
Mitsuru Funato ◽  
Yoichi Kawakami
Keyword(s):  
Quantum Wells ◽  
Highly Efficient ◽  
Uv Emitters

scholarly journals Highly efficient vortex four-wave mixing in asymmetric semiconductor quantum wells

2020 ◽  
Vol 28 (3) ◽  
pp. 2975 ◽  
Author(s):  
Jing Qiu ◽  
Zhiping Wang ◽  
Dongsheng Ding ◽  
Weibin Li ◽  
Benli Yu
Keyword(s):  
Quantum Wells ◽  
Four Wave Mixing ◽  
Wave Mixing ◽  
Highly Efficient ◽  
Semiconductor Quantum Wells

scholarly journals Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

2011 ◽  
Vol 99 (1) ◽  
pp. 011901 ◽  
Author(s):  
H. Jönen ◽  
U. Rossow ◽  
H. Bremers ◽  
L. Hoffmann ◽  
M. Brendel ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Stacking Faults ◽  
Highly Efficient

scholarly journals Monolayer-Scale GaN/AlN Multiple Quantum Wells for High Power e-Beam Pumped UV-Emitters in the 240–270 nm Spectral Range

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2553
Author(s):  
Valentin Jmerik ◽  
Dmitrii Nechaev ◽  
Kseniya Orekhova ◽  
Nikita Prasolov ◽  
Vladimir Kozlovsky ◽  
...  
Keyword(s):  
Electron Beam ◽  
Quantum Wells ◽  
Spectral Range ◽  
Stark Effect ◽  
Electron Gun ◽  
Spiral Growth ◽  
Surface Topology ◽  
Multiple Quantum ◽  
Uv Emitters ◽  
A Current

Monolayer (ML)-scale GaN/AlN multiple quantum well (MQW) structures for electron-beam-pumped ultraviolet (UV) emitters are grown on c-sapphire substrates by using plasma-assisted molecular beam epitaxy under controllable metal-rich conditions, which provides the spiral growth of densely packed atomically smooth hillocks without metal droplets. These structures have ML-stepped terrace-like surface topology in the entire QW thickness range from 0.75–7 ML and absence of stress at the well thickness below 2 ML. Satisfactory quantum confinement and mitigating the quantum-confined Stark effect in the stress-free MQW structures enable one to achieve the relatively bright UV cathodoluminescence with a narrow-line (~15 nm) in the sub-250-nm spectral range. The structures with many QWs (up to 400) exhibit the output optical power of ~1 W at 240 nm, when pumped by a standard thermionic-cathode (LaB6) electron gun at an electron energy of 20 keV and a current of 65 mA. This power is increased up to 11.8 W at an average excitation energy of 5 µJ per pulse, generated by the electron gun with a ferroelectric plasma cathode at an electron-beam energy of 12.5 keV and a current of 450 mA.

Self‐Limiting Growth of Ultrathin GaN/AlN Quantum Wells for Highly Efficient Deep Ultraviolet Emitters

2019 ◽  
Vol 7 (21) ◽  
pp. 1900860 ◽  
Author(s):  
Hirotsugu Kobayashi ◽  
Shuhei Ichikawa ◽  
Mitsuru Funato ◽  
Yoichi Kawakami
Keyword(s):  
Quantum Wells ◽  
Highly Efficient ◽  
Deep Ultraviolet

scholarly journals XXIII Международный симпозиум Нанофизика и наноэлектроника", Нижний Новгород, 11-14 марта 2019 г. Гетероструктуры с GaAs/GaP-квантовыми ямами, выращенные на Si-подложках

2019 ◽  
Vol 53 (9) ◽  
pp. 1167
Author(s):  
Д.С. Абрамкин ◽  
М.О. Петрушков ◽  
М.А. Путято ◽  
Б.Р. Семягин ◽  
Е.А. Емельянов ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Temperature Stability ◽  
Nonradiative Recombination ◽  
High Concentration ◽  
Light Emitting ◽  
Highly Efficient ◽  
Hybrid Substrates ◽  
Recombination Centers ◽  
Lattice Matched

AbstractMolecular-beam epitaxy is used to produce GaP/Si hybrid substrates that allow the growth of highly efficient light-emitting heterostructures with GaAs/GaP quantum wells. Despite the relatively high concentration of nonradiative-recombination centers in GaP/Si layers, GaAs/GaP quantum-well heterostructures grown on GaP/Si hybrid substrates are highly competitive in terms of efficiency and temperature stability of luminescence to similar heterostructures grown on lattice-matched GaP substrates.

scholarly journals Ultrahigh-efficiency aqueous flat nanocrystals of CdSe/CdS@Cd1−xZnxS colloidal core/crown@alloyed-shell quantum wells

Nanoscale ◽  
2019 ◽  
Vol 11 (1) ◽  
pp. 301-310 ◽  
Author(s):  
Sushant Shendre ◽  
Savas Delikanli ◽  
Mingjie Li ◽  
Didem Dede ◽  
Zhenying Pan ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Highly Efficient

Highly efficient aqueous quantum wells are obtained from composition-tuned gradient shells with monolayer precision.

Tunneling-induced highly efficient four-wave mixing in asymmetric double quantum wells

2018 ◽  
Vol 15 (4) ◽  
pp. 045208 ◽  
Author(s):  
Dong Sun ◽  
Hongjun Zhang ◽  
Hui Sun ◽  
Ximei Li ◽  
Huijing Li
Keyword(s):  
Quantum Wells ◽  
Four Wave Mixing ◽  
Double Quantum ◽  
Wave Mixing ◽  
Highly Efficient ◽  
Asymmetric Double Quantum Wells
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